AONR32314 30V N-Channel MOSFET General Description Product Summary * Latest advanced trench technology * Low RDS(ON) * High Current capability * RoHS and Halogen-Free Compliant ID (at VGS=10V) 30V 30A RDS(ON) (at VGS=10V) < 8.7m RDS(ON) (at VGS=4.5V) < 12.3m VDS Applications 100% UIS Tested 100% Rg Tested * Notebook AC-in load switch * Battery protection charge/discharge Top View D DFN 3x3_EP Bottom View Top View PIN1 S S S 1 8 D 2 7 3 6 D D G 4 5 D G S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AONR32314 DFN 3X3 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.05mH TC=25C Power Dissipation B TC=100C C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: March 2018 17 33 A EAS 27 mJ 24 Steady-State Steady-State W 9.6 4.1 RqJA RqJC W 2.6 TJ, TSTG Symbol t 10s A IAS PDSM TA=70C A 13.5 PD TA=25C A V 90 IDSM TA=70C 20 25.5 IDM TA=25C Continuous Drain Current Units V 30 ID TC=100C Maximum 30 -55 to 150 Typ 24 47 4.2 www.aosmd.com Max 30 60 5.2 C Units C/W C/W C/W Page 1 of 6 AONR32314 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55C 1.25 100 nA 1.75 2.25 V 7.2 8.7 11.2 13.5 12.3 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=14A 9.8 gFS Forward Transconductance VDS=5V, ID=17A 53 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125C G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 VGS=10V, ID=17A VGS=0V, VDS=15V, f=1MHz Units V VDS=30V, VGS=0V IDSS Max m m S 1 V 30 A 1420 pF 150 pF 95 pF 2 3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 32 nC Qg(4.5V) Total Gate Charge 10 15 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr f=1MHz VGS=10V, VDS=15V, ID=17A 1 4.7 nC 4 nC 6.5 ns 2.5 ns 22.5 ns 3 ns IF=17A, di/dt=500A/ms 7.5 Body Diode Reverse Recovery Charge IF=17A, di/dt=500A/ms 9.0 ns nC VGS=10V, VDS=15V, RL=0.75W, RGEN=3W A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R qJA t 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150C. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: March 2018 www.aosmd.com Page 2 of 6 AONR32314 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 4.5V 10V 80 4V VDS=5V 4V 60 60 ID (A) ID (A) 3.5V 40 40 125C 3V 20 20 25C VGS=2.5V 0 0 0 1 2 3 4 0 5 1 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 20 Normalized On-Resistance 1.8 15 RDS(ON) (mW) 2 VGS=4.5V 10 5 VGS=10V 1.6 VGS=10V ID=17A 1.4 1.2 VGS=4.5V ID=14A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 1.0E+02 ID=17A 1.0E+01 1.0E+00 125C 15 IS (A) RDS(ON) (mW) 20 125C 1.0E-01 10 1.0E-02 5 25C 1.0E-03 25C 0 1.0E-04 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: March 2018 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AONR32314 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=15V ID=17A 8 Ciss Capacitance (pF) VGS (Volts) 1500 6 4 2 1000 500 Coss 0 Crss 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 200 TJ(Max)=150C TC=25C 10ms 100.0 150 10ms RDS(ON) limited 100ms 1ms 10ms 1.0 TJ(Max)=150C TC=25C 0.1 0.0 0.01 DC Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 5 100 50 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=5.2C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: March 2018 www.aosmd.com Page 4 of 6 AONR32314 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 25 Power Dissipation (W) 30 Current rating ID (A) 20 15 10 5 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: March 2018 www.aosmd.com Page 5 of 6 AONR32314 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: March 2018 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6