AONR32314
General Description Product Summary
VDS
ID (at VGS=10V) 30A
RDS(ON) (at VGS=10V) < 8.7mΩ
RDS(ON) (at VGS=4.5V) < 12.3mΩ
Applications 100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS
Avalanche energy L=0.05mH
CEAS
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RqJC
30V N-Channel MOSFET
Orderable Part Number
Package Type
Form
Minimum Order Quantity
30V
• Latest advanced trench technology
• Low RDS(ON)
• High Current capability
• RoHS and Halogen-Free Compliant
Avalanche Current C
Continuous Drain
Current
Thermal Characteristics
Parameter
Max
2.6
°C
Units
Junction and Storage Temperature Range
-55 to 150
Typ
PDSM
W
4.1
Power Dissipation A
Maximum Junction-to-Ambient A
°C/W
RqJA
24
47
30
W
ID
A
33
A
90
IDSM
13.5
mJ
27
17
30
AONR32314
DFN 3X3
Tape & Reel
3000
V
A
Absolute Maximum Ratings TA=25°C unless otherwise noted
±20
V
Maximum
Units
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient A D
4.2
60
5.2
• Notebook AC-in load switch
• Battery protection charge/discharge
Power Dissipation B
9.6
PD
30
24
Gate-Source Voltage
Pulsed Drain Current C
25.5
Parameter
Drain-Source Voltage
Continuous Drain
Current G
G
D
S
Top View
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
DFN 3x3_EP
Top View Bottom View
PIN1
PIN1
Rev.2.0: March 2018 www.aosmd.com Page 1 of 6
AONR32314
Symbol Min Typ Max Units
BVDSS 30 V
VDS=30V, VGS=0V 1
TJ=55°C 5
IGSS ±100 nA
VGS(th) Gate Threshold Voltage 1.25 1.75 2.25 V
7.2 8.7
TJ=125°C 11.2 13.5
9.8 12.3 mΩ
gFS 53 S
VSD 0.7 1 V
IS30 A
Ciss 1420 pF
Coss 150 pF
Crss 95 pF
Rg1 2 3 Ω
Qg(10V) 22 32 nC
Qg(4.5V) 10 15 nC
Qgs 4.7 nC
Qgd 4nC
tD(on) 6.5 ns
tr2.5 ns
tD(off) 22.5 ns
tf3ns
trr 7.5 ns
Qrr 9.0 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
mΩ
VGS=10V, VDS=15V, ID=17A
Total Gate Charge
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Gate resistance
f=1MHz
IDSS
μA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
ID=250mA, VGS=0V
RDS(ON)
Static Drain-Source On-Resistance
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
VDS=0V, VGS=±20V
Maximum Body-Diode Continuous Current G
Input Capacitance
Gate-Body leakage current
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
IF=17A, di/dt=500A/ms
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.75W,
RGEN=3W
Diode Forward Voltage
DYNAMIC PARAMETERS
VGS=4.5V, ID=14A
IF=17A, di/dt=500A/ms
Turn-On Rise Time
Reverse Transfer Capacitance
VGS=0V, VDS=15V, f=1MHz
VDS=VGS, ID=250mA
Output Capacitance
Forward Transconductance
IS=1A, VGS=0V
VDS=5V, ID=17A
VGS=10V, ID=17A
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.2.0: March 2018 www.aosmd.com Page 2 of 6
AONR32314
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
0 1 2 3 4 5
ID (A)
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
0
5
10
15
20
0 5 10 15 20 25 30
RDS(ON) (mW)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS (A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=14A
VGS=10V
ID=17A
0
5
10
15
20
25
2 4 6 8 10
RDS(ON) (mW)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=17A
25°C
125°C
0
20
40
60
80
0 1 2 3 4 5
ID (A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=2.5V
3V
4.5V
10V
4V
3.5V
4V
Rev.2.0: March 2018 www.aosmd.com Page 3 of 6
AONR32314
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
50
100
150
200
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0
2
4
6
8
10
0 5 10 15 20 25
VGS (Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZqJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Coss
Crss
VDS=15V
ID=17A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZqJC.RqJC
Ton
T
PDM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TC=25°C
10ms
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID (Amps)
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100ms
10ms
RqJC=5.2°C/W
Rev.2.0: March 2018 www.aosmd.com Page 4 of 6
AONR32314
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZqJA.RqJA
Ton
T
PDM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
5
10
15
20
25
30
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
0 25 50 75 100 125 150
Current rating ID (A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
TA=25°C
RqJA=60°C/W
Rev.2.0: March 2018 www.aosmd.com Page 5 of 6
AONR32314
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
ton
td(off) tf
toff
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs -
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
AR
AR
trr
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Resistive Switching Test Circuit & Waveforms
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Figure D: Diode Recovery Test Circuit & Waveforms
Rev.2.0: March 2018 www.aosmd.com Page 6 of 6