© 2001 IXYS All rights reserved 98873 (12/01)
Isolated backside*
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ250 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C25A
IDM TC= 25°C, Note 1 120 A
IAR TC= 25°C30A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
Weight 5 g
ISOPLUS 247TM
Standard Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Features
lSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
lLow drain to tab capacitance(<30pF)
lLow RDS (on) HDMOSTM process
lRugged polysilicon gate cell structure
lRated for Unclamped Inductive Load
Switching (UIS)
Applications
lDC-DC converters
lBattery chargers
lSwitched-mode and resonant-mode
power supplies
lDC choppers
lAC motor control
Advantages
lEasy assembly
lSpace savings
lHigh power density
G = Gate
D = Drain
S = Source
* Patent pending
E153432
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250µA250 V
VGS(th) VDS = VGS, ID = 250µA2.0 4.0 V
IGSS VGS = ±20 V, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = IT60 75 mΩ
Notes 2, 3
Advance Technical Information
IXTR 30N25 VDSS =250 V
ID (cont) = 25 A
RDS(on) = 75 mΩΩ
ΩΩ
Ω
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTR 30N25
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = ITNotes 2, 3 24 32 S
Ciss 3950 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 510 pF
Crss 177 pF
td(on) 19 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 30A 19 ns
td(off) RG = 3.6 Ω (External), Notes 2, 3 79 ns
tf17 ns
Qg(on) 136 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT32 nC
Notes 2, 3
Qgd 52 nC
RthJC 0.75 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 30 A
ISM Repetitive; Note 1 120 A
VSD IF = IS, VGS = 0 V, Notes 2, 3 1.5 V
trr 300 ns
QRM 3.0 µC
IF = IS, -di/dt = 100 A/µs, VR = 100 V
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IT = 15A
ISOPLUS 247 OUTLINE
