AP-CF008GH4FR-ETNDNRK - Apacer

RoHS Compliant

Value Added Compact Flash Series Ⅲ

ⅢⅢ

Ⅲ

Specification for Industrial CF

Mar 8, 2011

Version 1.0

Apacer Technology Inc.

4

th

Fl., 75 Hsin Tai Wu Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221

Tel: +886-2-2698-2888 Fax: +886-2-2698-2889

www.apacer.com

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AP-CFxxxxE3XR-XXXXXXK

1

Features:







Compact Flash Association

Specification Revision 3.0 Standard

Interface

– ATA command set compatible

– ATA mode support for up to:

PIO Mode-6

Multiword DMA Mode-4

Ultra DMA Mode-4







Connector Type

– 50 pins female







Low power consumption (typical)

– Supply voltage: 3.3V & 5V

– Active mode: 80 mA/95 mA (3.3V/5.0V)

– Sleep mode: 700 µA/900 µA (3.3V/5.0V)



Performance**

– Sustained read: 30 MB/sec

– Sustained write:

Standard: 5 MB/sec

High Speed: 15 MB/sec







Capacity

– Standard:

128, 256, 512 MB

1, 2, 16 GB

– High Speed:

256, 512 MB

1, 2, 4, 8 GB







NAND Flash Type: SLC



Temperature ranges

– Operation:

Standard: 0°C to 70°C

ET*: -40°C to 85°C

– Storage: -40°C to 100°C



Flash management

– Intelligent endurance design

Advanced wear-leveling algorithms

S.M.A.R.T. Technology

Built-in Hardware ECC

Enhanced Data Integrity

– Intelligent power failure recovery







RoHS compliant

*Extended Temperature

**Performance varies with flash configurations

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Table of Contents

1. GENERAL DESCRIPTION.........................................................................................3

1.1 PERFORMANCE-OPTIMIZED CONTROLLER ...............................................................................................3

1.1.1 Power Management Unit (PMU)...................................................................................................3

1.1.2 SRAM Buffer.................................................................................................................................3

2. FUNCTIONAL BLOCK...............................................................................................4

3. PIN ASSIGNMENTS...................................................................................................5

4. CAPACITY SPECIFICATION .....................................................................................7

4.1 PERFORMANCE SPECIFICATION ..............................................................................................................7

4.2 ENVIRONMENTAL SPECIFICATIONS..........................................................................................................8

5. FLASH M ANAGEMENT.............................................................................................9

5.1 INTELLIGENT ENDURANCE DESIGN..........................................................................................................9

5.1.1 Advanced wear-leveling algorithms..............................................................................................9

5.1.2 S.M.A.R.T. technology..................................................................................................................9

5.1.3 Built-in hardware ECC ..................................................................................................................9

5.1.4 Enhanced data integrity................................................................................................................9

5.2 INTELLIGENT POWER FAILURE RECOVERY.............................................................................................10

6. SOFTWARE INTERFACE .......................................................................................11

6.1 COMMAND SET ....................................................................................................................................11

7. ELECTRICAL SPECIFICATION..............................................................................13

7.1 DC CHARACTERISTICS.........................................................................................................................14

7.2 AC CHARACTERISTICS .........................................................................................................................15

7.2.1 Attribute Memory Read Timing Specification .............................................................................16

7.2.2 Configuration Register (Attribute Memory) Write Specification..................................................17

7.2.3 Common Memory Read Timing Specification ............................................................................18

7.2.4 Common Memory Write Timing Specification ............................................................................19

7.2.5 I/O Input (Read) Timing Specification.........................................................................................20

7.2.6 I/O Output (Write) Timing Specification......................................................................................21

7.2.7 Ultra DMA Mode Data Transfer Input/Output (Read/Write) Timing............................................22

7.2.8 Media Side Interface I/O Timing Specifications..........................................................................34

8. PHYSICAL CHARACTERISTICS............................................................................37

8.1 DIMENSION..........................................................................................................................................37

9. PRODUCT ORDERING INFORMATION.................................................................38

9.1 PRODUCT CODE DESIGNATIONS ...........................................................................................................38

9.2 VALID COMBINATIONS ..........................................................................................................................39

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1. General Description

Apacer’s Industrial Compact Flash Card (CFC) offers the most reliable and high performance storage

which is compatible with CF Type I and Type II devise. Unlike the ordinary consumer Compact Flash

cards, Apacer Industrial Compact Flash card provides solid traceability to ensure all products HW/SW are

the same as you qualified.

Apacer’s CFC provides complete PCMCIA - ATA functionality and compatibility. Apacer ‘s Compact Flash

technology is designed for use in Point of Sale (POS) terminals, telecom, IP-STB, medical instruments,

surveillance systems, industrial PCs and handheld applications.

Featuring technologies as Advanced Wear-leveling algorithms, S.M.A.R.T, Enhanced Data Integrity, Built-

in Hardware ECC, and Intelligent Power Failure Recovery, Apacer’s Industrial Compact Flash Card

assures users of a versatile device on data storage.

1.1 Performance-Optimized Controller

The Compact Flash Card Controller translates standard CF signals into flash media data and control

signals.

1.1.1 Power Management Unit (PMU)

The power management unit (PMU) controls the power consumption of the Compact Flash card controller.

It reduces the power consumption of the Compact Flash Card Controller by putting circuitry not in

operation into sleep mode. The PMU has zero wake-up latency.

1.1.2 SRAM Buffer

The Compact Flash Card Controller performs as an SRAM buffer to optimize the host’s data transfer to

and from the flash media.

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2. Functional Block

The Compact Flash Card (CFC) includes a controller and flash media, as well as the Compact Flash

standard interface. Figure 2-1 shows the functional block diagram.

Figure 2-1: Functional block diagram

Flash

Media

Flash

Media

Flash

Media

Flash

Media

Flash Array

Compact Flash

Interface

Compact Flash

Controller

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3. Pin Assignments

Table 3-1 lists the pin assignments with respective signal names for the 50-pin configuration. A “#” suffix

indicates the active low signal. The pin type can be input, output or input/output.

Table 3-1: Pin assignments (1 of 2)

Memory card mode I/O card mode True IDE mode Pin No.

Signal name

Pin I/O type

Signal name Pin I/O type Signal name

Pin I/O type

1 GND - GND - GND -

2 D3 I/O D3 I/O D3 I/O

3 D4 I/O D4 I/O D4 I/O

4 D5 I/O D5 I/O D5 I/O

5 D6 I/O D6 I/O D6 I/O

6 D7 I/O D7 I/O D7 I/O

7 #CE1 I #CE1 I #CS0 I

8 A10 I A10 I A10

1

I

9 #OE I #OE I #ATA SEL I

10 A9 I A9 I A9

1

I

11 A8 I A8 I A8

1

I

12 A7 I A7 I A7

1

I

13 VCC - VCC - VCC -

14 A6 I A6 I A6

1

I

15 A5 I A5 I A5

1

I

16 A4 I A4 I A4

1

I

17 A3 I A3 I A3

1

I

18 A2 I A2 I A2 I

19 A1 I A1 I A1 I

20 A0 I A0 I A0 I

21 D0 I/O D0 I/O D0 I/O

22 D1 I/O D1 I/O D1 I/O

23 D2 I/O D2 I/O D2 I/O

24 WP O #IOIS16 O #IOCS16 O

25 #CD2 O #CD2 O #CD2 O

26 #CD1 O #CD1 O #CD1 O

27 D11 I/O D11 I/O D11 I/O

28 D12 I/O D12 I/O D12 I/O

29 D13 I/O D13 I/O D13 I/O

30 D14 I/O D14 I/O D14 I/O

31 D15 I/O D15 I/O D15 I/O

32 #CE2 I #CE2 I #CS1 I

33 #VS1 O #VS1 O #VS1 O

34 #IORD I #IORD I #IORD I

35 #IOWR I #IOWR I #IOWR I

36 #WE I #WE I #WE I

37 RDY/-BSY O #IREQ O INTRQ O

38 VCC - VCC - VCC -

39 #CSEL I #CSEL I #CSEL I

40 #VS2 O #VS2 O #VS2 O

41 RESET I RESET I #RESET I

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Table 3-1: Pin assignments (2 of 2)

Memory card mode I/O card mode True IDE mode Pin No.

Signal name

Pin I/O type

Signal name Pin I/O type Signal name

Pin I/O type

42 #WAIT O #WAIT O IORDY O

43 #INPACK O #INPACK O DMARQ

2

O

44 #REG I #REG I DMACK

2

I

45 BVD2 O #SPKR O #DASP O

46 BVD1 O #STSCHG O #PDIAG O

47 D8 I/O D8 I/O D8 I/O

48 D9 I/O D9 I/O D9 I/O

49 D10 I/O D10 I/O D10 I/O

50 GND - GND - GND -

1. The signal should be grounded by the host.

2. Connection required when UDMA is in use.

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4. Capacity Specification

Capacity specification of the Compact Flash Card series (CFC) is available as shown in Table 4-1. It lists

the specific capacity and the default numbers of heads, sectors and cylinders for each product line.

Table 4-1: Capacity specifications

Capacity Total bytes* Cylinders Heads Sectors Max LBA

128 MB 128,450,560 980 8 32 250,880

256 MB 256,901,120 980 16 32 501,760

512 MB 512,483,328 993 16 63 1,000,944

1GB 1,024,966,656 1,986 16 63 2,001,888

2GB 2,048,901,120 3,970 16 63 4,001,760

4GB 4,110,188,544 7,964 16 63 8,027,712

8GB 8,195,604,480 15,880 16 63 16,007,040

16GB 16,391,208,960 16,383** 16 63 32,014,080

*Display of total bytes varies from file systems.

**Cylinders, heads or sectors are not applicable for these capacities. Only LBA addressing applies

4.1 Performance Specification

Performances of the Standard and High Speed ATA-Flash Disk are listed in Table 4-2 and Table 4-3.

Table 4-2: Standard Performance specifications

Capacity

Performance

128 MB / 256 MB

512 MB / 1 GB

2 GB 16 GB

Sustained read (MB/s) 15

20

Sustained write (MB/s) 5

5

Table 4-3: High Speed Performance specifications

Capacity

Performance

256 MB

512 MB

1 GB 2 GB 4 GB 8 GB

Sustained read (MB/s) 25 25 25 25 30 30

Sustained write (MB/s) 5 5 5 5 10 15

Note: Performance varies from flash configurations.

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4.2 Environmental Specifications

Environmental specification of the Compact Flash Card series (CFC) which follows the MIL-STD-810F

standards is available as shown in Table 4-4.

Table 4-4: Environmental specifications

Environment Specification

Operation 0°C to 70 ℃

(Standard)

; -40°C to 85 ℃

(Extended Temperature)

Temperature Storage -40℃ to 100℃

Humidity 5% to 95% RH (Non-condensing)

Vibration (Non-Operation) Sine wave: 10~2000Hz, 15G (X, Y, Z axes)

Shock (Non-Operation) Half sine wave, Peak acceleration 50 G, 11 ms (X, Y, Z ; All 6 axes)

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5. Flash Management

5.1 Intelligent Endurance Design

5.1.1 Advanced wear-leveling algorithms

The NAND flash devices are limited by a certain number of write cycles. When using a file system,

frequent file table updates is mandatory. If some area on the flash wears out faster than others, it would

significantly reduce the lifetime of the whole device, even if the erase counts of others are far from the

write cycle limit. Thus, if the write cycles can be distributed evenly across the media, the lifetime of the

media can be prolonged significantly. The scheme is achieved both via buffer management and Apacer-

specific advanced wear leveling to ensure that the lifetime of the flash media can be increased, and the

disk access performance is optimized as well.

5.1.2 S.M.A.R.T. technology

S.M.A.R.T. is an acronym for Self-Monitoring, Analysis and Reporting Technology, an open standard

allowing disk drives to automatically monitor their own health and report potential problems. It protects the

user from unscheduled downtime by monitoring and storing critical drive performance and calibration

parameters. Ideally, this should allow taking proactive actions to prevent impending drive failure. Apacer

SMART feature adopts the standard SMART command B0h to read data from the drive. When the Apacer

SMART Utility running on the host, it analyzes and reports the disk status to the host before the device is

in critical condition.

5.1.3 Built-in hardware ECC

The ATA-Disk Module uses BCH Error Detection Code (EDC) and Error Correction Code (ECC)

algorithms which correct up to eight random single-bit errors for each 512-byte block of data. High

performance is fulfilled through hardware-based error detection and correction.

5.1.4 Enhanced data integrity

The properties of NAND flash memory make it ideal for applications that require high integrity while

operating in challenging environments. The integrity of data to NAND flash memory is generally

maintained through ECC algorithms and bad block management. Flash controllers can support up to 8

bits ECC capability for accuracy of data transactions, and bad block management is a preventive

mechanism from loss of data by retiring unusable media blocks and relocating the data to the other blocks,

along with the integration of advanced wear leveling algorithms, so that the lifespan of device can be

expanded.

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5.2 Intelligent Power Failure Recovery

The Low Power Detection on the controller initiates cached data saving before the power supply to the

device is too low. This feature prevents the device from crash and ensures data integrity during an

unexpected blackout. Once power was failure before cached data writing back into flash, data in the

cache will lost. The next time the power is on, the controller will check these fragmented data segment,

and, if necessary, replace them with old data kept in flash until programmed successfully.

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6. Software Interface

6.1 Command Set

Table 6-1 summarizes the command set with the paragraphs that follow describing the individual

commands and the task file for each.

Table 6-1: Command set (1 of 2)

Command Code FR

1

SC

2

SN

3

CY

4

DH

5

LBA

6

Check-Power-Mode E5H or 98H - - - - D

8

-

Execute-Drive-Diagnostic 90H - - - - D -

Erase Sector(s) C0H - Y Y Y Y Y

Flush-Cache E7H - - - - D -

Format Track 50H - Y

7

- Y Y

8

Y

Identify-Drive ECH - - - - D -

Idle E3H or 97H - Y - - D -

Idle-Immediate E1H or 95H - - - - D -

Initialize-Drive-Parameters 91H - Y - - Y -

NOP 00H - - - - D -

Read-Buffer E4H - - - - D -

Read-DMA C8H or C9H - Y Y Y Y Y

Read-Multiple C4H - Y Y Y Y Y

Read-Sector(s) 20H or 21H - Y Y Y Y Y

Read-Verify-Sector(s) 40H or 41H - Y Y Y Y Y

Recalibrate 1XH - - - - D -

Request-Sense 03H - - - - D -

Seek 7XH - - Y Y Y Y

Set-Features EFH Y

7

- - - D -

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Table 6-1: Command set (2 of 2)

Command Code FR

1

SC

2

SN

3

CY

4

DH

5

LBA

6

SMART B0H Y Y Y Y D

Set-Multiple-Mode C6H - Y - - D -

Set-Sleep-Mode E6H or 99H - - - - D -

Standby E2H or 96H - - - - D -

Standby-lmmediate E0H or 94H - - - - D -

Translate-Sector 87H - Y Y Y Y Y

Write-Buffer E8H - - - - D -

Write-DMA CAH or CBH - Y Y Y Y Y

Write-Multiple C5H - Y Y Y Y Y

Write-Multiple-Without-Erase CDH - Y Y Y Y Y

Write-Sector(s) 30H or 31H - Y Y Y Y Y

Write-Sector-Without-Erase 38H - Y Y Y Y Y

Write-Verify 3CH - Y Y Y Y Y

1. FR - Features register

2. SC - Sector Count register

3. SN - Sector Number register

4. CY - Cylinder registers

5. DH - Drive/Head register

6. LBA - Logical Block Address mode supported (see command descriptions for use)

7. Y - The register contains a valid parameter for this command

8. For the Drive/Head register:

Y means both the CFC and Head parameters are used

D means only the CFC parameter is valid and not the Head parameter

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7. Electrical Specification

Caution: Absolute Maximum Stress Ratings – Applied conditions greater than those listed under

“Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these conditions or conditions greater than those defined in

the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating

conditions may affect device reliability.

Table 7-1: Operating range

Range Ambient Temperature 3.3V 5V

Standard 0°C to +70°C

Extended Temperature

-40°C to +85°C 3.135-3.465V 4.75-5.25V

Table 7-2: Absolute maximum power pin stress ratings

Parameter Symbol Conditions

Input Power V

DD

-0.3V min. to 6.5V max.

Voltage on any pin except V

DD

with respect to GND V -0.5V min. to VDD + 0.5V max.

Table 7-3: Recommended system power-up timing

Symbol Parameter Typical Maximum Units

T

PU-READY1

Power-up to Ready Operation 200 1000 ms

T

PU-WRITE1

Power-up to Write Operation 200 1000 ms

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

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7.1 DC Characteristics

Table 7-4: DC Characteristics

Symbol

Type Parameter Min Max Units Conditions

V

IH1

V

IL1

I1 Input Voltage 2.0V

0.8V

V V

DDQ

=V

DDQ

Max

V

DDQ

=V

DDQ

Min

I

IL1

I1Z Input Leakage Current -10 10 μA V

IN

=GND to V

DDQ

V

DDQ

= V

DDQ

Max

I

U1

I1U Input Pull-Up Current -110

-1 μA V

OUT

=GND,

V

DDQ

= V

DDQ

Max

V

T+2

V

T-2

I2 Input Voltage Schmitt Trigger

0.8

2.0 V V

DDQ

=V

DDQ

Max

V

DDQ

=V

DDQ

Min

I

IL2

I2Z Input Leakage Current -10 10 μA V

IN

=GND to V

DDQ

V

DDQ

= V

DDQ

Max

I

U2

I2U Input Pull-Up Current -110

-1 μA V

OUT

=GND,

V

DDQ

= V

DDQ

Max

V

OH1

V

OL1

Output Voltage 2.4

0.4 V I

OH1

=I

OH1

Min

I

OL1

=I

OL1

Max

I

OH1

Output Current -4 mA V

DDQ

=V

DDQ

Min

I

OL1

O1

Output Current 4 mA V

DDQ

=V

DDQ

Min

V

OH2

V

OL2

Output Voltage 2.4

0.4 V I

OH2

=I

OH2

Min

I

OL2

=I

OL2

Max

I

OH2

Output Current -6 mA V

DDQ

=3.135V-3.465V

I

OL2

Output Current 6 mA V

DDQ

=3.135V-3.465V

I

OH2

Output Current -8 mA V

DDQ

=4.5V-5.5V

I

OL2

O2

Output Current 8 mA V

DDQ

=4.5V-5.5V

V

OH6

V

OL6

Output Voltage for DASP# pin 2.4

0.4 V I

OH6

=I

OH6

Min

I

OL6

=I

OL6

Max

I

OH6

Output Current for DASP# pin -3 mA V

DDQ

=3.135V-3.465V

I

OL6

Output Current for DASP# pin 8 mA V

DDQ

=3.135V-3.465V

I

OH6

Output Current for DASP# pin -3 mA V

DDQ

=4.5V-5.5V

I

OL6

O6

Output Current for DASP# pin 12 mA V

DDQ

=4.5V-5.5V

I

DD

1,2

PWR

Power supply current

(Ta = 0°C to +70°C) 50 mA V

DD

=V

DD

Max

V

DDQ

=V

DDQ

Max

I

DD

1,2

PWR

Power supply current

(Ta= -40°C to +85°C) 75 mA V

DD

=V

DD

Max

V

DDQ

=V

DDQ

Max

I

SP

PWR

Sleep/Standby/Idle current

(T

a

= 0°C to +70°C)

75

μ

A V

DD

=V

DD

Max

V

DDQ

=V

DDQ

Max

I

SP

PWR

Sleep/Standby/Idle current

(T

a

= -40°C to +85°C)

200

μ

A V

DD

=V

DD

Max

V

DDQ

=V

DDQ

Max

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7.2 AC Characteristics

Figure 7-1: AC Input/Output Reference Waveforms

AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”.

Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise

and fall times (10% ↔ 90%) are <10 ns.

Note: V

IT

- V

INPUT

Test

V

OT

- V

OUTPUT

Test

V

IHT

- V

INPUT HIGH

Test

V

ILT

- V

INPUT LOW

Test

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7.2.1 Attribute Memory Read Timing Specification

The Attribute Memory access time is defined as 100 ns. Detailed timing specifications are shown in the

table below.

Table 7-5: Attribute Memory Read Timing Specification

Speed Version 100 ns

Item Symbol IEEE Symbol Min* Max* Units

Read Cycle Time T

C(R)

tAVAV 100 ns

Address Access Time T

A(A)

tAVQV 100 ns

Card Enable Access Time T

A(CE)

tELQV 100 ns

Output Enable Access Time T

A(OE)

tGLQV 50 ns

Output Disable Time from CE# T

DIS(CE)

tEHQZ 50 ns

Output Disable Time from OE# T

DIS(OE)

tGHQZ 50 ns

Address Setup Time T

SU(A)

tAVGL 10 ns

Output Enable Time from CE# T

EN(CE)

tELQNZ 5 ns

Output Enable Time from OE# T

EN(OE)

tGLQNZ 5 ns

Data Valid from Address Change T

V(A)

tAXQZ 0 ns

*D

OUT

signifies data provided by the Compact Flash card to the system. The CE# signal or both the OE# signal and the WE# signal

must be de-asserted between consecutive cycle operations. All AC specifications are guaranteed by design.

Figure 7-2: Attribute Memory Read Timing Diagram

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7.2.2 Configuration Register (Attribute Memory) Write Specification

The card configuration write access time is defined as 100 ns. Detailed timing specifications are shown in

the table below.

Table 7-6: Configuration Register (Attribute Memory) Write Timing

Speed Version 100 ns

Item Symbol IEEE Symbol Min* Max* Units

Write Cycle Time T

C(W)

tAVAV 100 ns

Write Pulse Width T

W(WE)

tWLWH 60 ns

Address Setup Time T

SU(A)

tAVWL 10 ns

Write Recover Time T

REC(WE)

tWMAX 15 ns

Data Setup Time for WE T

SU(DWE#H)

tDVWH 40 ns

Data Hold Time T

H(D)

tWMDX 15 ns

*D

IN

signifies data provided by the system to the Compact Flash card. All AC specifications are guaranteed by design.

Figure 7-3: Configuration Register (Attribute Memory) Write Timing Diagram

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7.2.3 Common Memory Read Timing Specification

Table 7-7: Common Memory Read Timing

Item Symbol IEEE Symbol Min* Max* Units

Output Enable Access Time T

A(OE)

tGLQV 50 ns

Output Disable Time from OE T

DIS(OE)

tGHQZ 50 ns

Address Setup Time T

SU(A)

tAVGL 10 ns

Address Hold Time T

REC(WE)

tGHAX 15 ns

CE Setup before OE T

SU(CE)

tELGL 0 ns

CE Hold following OE T

H(CE)

tGHEH 15 ns

*All AC specifications are guaranteed by design.

Figure 7-4: Common Memory Read Timing Diagram

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7.2.4 Common Memory Write Timing Specification

Table 7-8: Common Memory Write Timing

Item Symbol IEEE Symbol Min* Max* Units

Data Setup before WE T

SU(DWE#H)

tDVWH 40 ns

Data Hold following WE T

H(D)

tWMDX 15 ns

WE Pulse Width T

W(WE)

tWLWH 60 ns

Address Setup Time T

SU(A)

tAVWL 10 ns

CE Setup before WE T

SU(CE)

tELWL 0 ns

Write Recovery Time T

REC(WE)

tWMAX 15 ns

Address Hold Time T

H(A)

tGHAX 15 ns

CE Hold following WE T

H(CE)

tGHEH 15 ns

*All AC specifications are guaranteed by design.

Figure 7-5: Common Memory Write Timing Diagram

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7.2.5 I/O Input (Read) Timing Specification

Table 7-9: I/O Read Timing

Item Symbol IEEE Symbol Min* Max* Units

Data Delay after IORD T

D(IORD)

tlGLQV 100 ns

Data Hold following IORD T

H(IORD)

tlGHQX 0 ns

IORD Width Time T

W(IORD)

tlGLIGH 165 ns

Address Setup before IORD T

SUA(IORD)

tAVIGL 70 ns

Address Hold following IORD T

HA(IORD)

tlGHAX 20 ns

CE Setup before IORD T

SUCE(IORD)

tELIGL 5 ns

CE Hold following IORD T

HCE(IORD)

tlGHEH 20 ns

REG Setup before IORD T

SUREG(IORD)

tRGLIGL 5 ns

REG Hold following IORD T

HREG(IORD)

tlGHRGH 0 ns

INPACK Delay Falling from IORD T

DFINPACK(IORD)

tlGLIAL 0 45 ns

INPACK Delay Rising from IORD T

DRINPACK(IORD)

tlGHIAH 45 ns

IOIS16 Delay Falling from Address

T

DFIOIS16(ARD)

tAVISL 35 ns

IOIS16 Delay Rising from Address T

DRIOIS16(ADR)

tAVISH 35 ns

*All AC specifications are guaranteed by design.

Note: The maximum load on –INPACK and IOIS16# is 1 LSTTL with 50pF total load.

Figure 7-6: I/O Read Timing Diagram

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7.2.6 I/O Output (Write) Timing Specification

Table 7-10: I/O Write Timing

Item Symbol IEEE Symbol Min* Max* Units

Data Setup before IOWR T

SU(IOWR)

tDVIWH 60 ns

Data Hold following IOWR T

H(IOWR)

tlWHDX 30 ns

IOWR Width Time T

W(IOWR)

tlWLIWH 165 ns

Address Setup before IOWR T

SUA(IOWR)

tAVIWL 70 ns

Address Hold following IOWR T

HA(IOWR)

tlWHAX 20 ns

CE Setup before IOWR T

SUCE(IOWR)

tELIWL 5 ns

CE Hold following IOWR T

HCE(IOWR)

tlWHEH 20 ns

REG Setup before IOWR T

SUREG(IOWR)

tRGLIWL 5 ns

REG Hold following IOWR T

HREG(IOWR)

tlWHRGH 0 ns

IOIS16 Delay Falling from Address

T

DFIOIS16(ARD)

tAVISL 35 ns

IOIS16 Delay Rising from Address T

DRIOIS16(ADR)

tAVISH 35 ns

*All AC specifications are guaranteed by design.

Note: The maximum load on –INPACK and IOIS16# is 1 LSTTL with 50pF total load.

Figure 7-7: I/O Write Timing Diagram

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22

7.2.7 Ultra DMA Mode Data Transfer Input/Output (Read/Write) Timing

Table 7-11: Ultra DMA Data Burst Timing Specifications

1

Mode 4

Name Descriptions Min Max Unit

Measurement

Location

2

T

2CYCTYP

Typical sustained average two cycle time 60 ns Sender

T

CYC

Cycle time allowing for asymmetry and clock

variations (from STROBE edge to STROBE

edge)

25 ns Note

3

T

2CYC

Two cycle time allowing for clock variations

(from rising edge to next rising edge or from

falling edge to next falling edge of STROBE)

57 ns Sender

T

DS

Data setup time at recipient (from data valid until

STROBE edge)

4,5

5.0 ns Recipient

T

DH

Data hold time at Recipient (from STROBE edge

until data becomes invalid)

1,2

5.0 ns Recipient

T

DVS

Data valid setup time for Sender (from data valid

until STROBE edge)

6

6.0 ns Sender

T

DVH

Data valid hold time at Sender (from STROBE

edge until data becomes invalid)

3

6.0 ns Sender

T

CS

CRC word setup time at device

1

5.0 ns Device

T

CH

CRC word hold time at device

1

5.0 ns Device

T

CVS

CRC word valid setup time at host (from CRC

valid until DMACK negation)

3

6.7 ns Host

T

CVH

CRC word valid hold time at Sender (from

DMACK negation until CRC becomes invalid)

3

6.2 ns Host

T

ZFS

Time from STROBE output released-to-driving

until the first transition of critical timing 0 ns Device

T

DZFS

Time from data output released-to-driving until

the first transition of critical timing 6.7 ns Sender

T

FS

First STROBE time (for device to first negate

DSTROBE from STOP during a data in burst) 120 ns Device

T

LI

Limited interlock time

7

0 100 ns Note

8

T

MLI

Interlock time with minimum

4

20 ns Host

T

UI

Unlimited interlock time

4

0 ns Host

T

AZ

Maximum time allowed for output drivers to

release (from asserted to negated) 10 ns Note

9

T

ZAH

Minimum delay time required for output 20 ns Host

T

ZAD

Drivers to assert or negate (from released) 0 ns Device

T

ENV

Envelope time (from DMACK# to STOP and

HDMARDY# during data in burst initiation and

from DMACK to STOP during data our burst

initiation)

20 55 ns Host

T

RFS

Ready-to-final STROBE time (no STROBE edge

are sent this long after negation of DMARDY) 60 ns Sender

T

RP

Ready-to-pause time (Recipient waits to pause

until after negating DMARDY) 100 ns Recipient

T

IORDYZ

Maximum time before releasing IORDY 20 ns Device

T

ZIORDY

Minimum time before driving IORDY

10

0 ns Device

T

ACK

20 ns Host

T

SS

50 ns Sender

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1. All timing measurement switching points (low-to-high and high-to-low) are taken at 1.5V.

2. All signal transitions for a timing parameter are measured at the connector specified in the measurement location column. For

example, in the case of TRFS, both STROBE and DMARDY Transitions are measured at the Sender connector.

3. The parameter TCYC is measured at the recipient’s connector farthest from the Sender.

4. 80-Conductor cabling is required in order to meet sup (TDS, TCS) and hold (TDH, TCH) times in modes greater than two.

5. The parameters TDS and TDH for Mode 5 are defined for a Recipient at the end of the cable only in a configuration with a single

device located at the end of the cable. This could result in the minimum values for TDS and TDH for mode 5 at the middle

connector being 3.0 and 3.9 ns respectively.

6. Timing for TDVS, TDVH, TCVS, and TCVH are met for lumped capacitive loads of 15 and 50 pf at the connector where the Data

and STROBE signals have the same capacitive load value. Due to reflections on the cable, these timing measurements are not

valid in a normally functioning system.

7. The parameters TUI, TMLI, and TLI indicate Sender-to-Recipient or Recipient-to-Sender interlocks. For example, one agent

(either Sender or Recipient) is waiting for the other agent to respond with a signal before proceeding; TUI is an unlimited

interlock that has no maximum time value, TMLI is a limited time-out that has a defined minimum, and TLI is a limited time-out

that has a defined maximum.

8. The parameter TLI is measured at the connector of the Sender or Recipient that is responding to an incoming transition from the

Recipient or Sender respectively. Both the incoming signal and the outgoing response are measured at the same connector.

9. The parameter TAZ is measured at the connector of the Sender or Recipient that is driving the bus but must release the bus that

allow for a bus turnaround.

10. For all modes the parameter TZIORDY may be greater than TENV because the host has a pull-on IORDY giving it a known

state when released.

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AP-CFxxxxE3XR-XXXXXXK

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Table 7-12: Ultra DMA Sender and Recipient IC Timing Specifications

1

Mode 4

Name Descriptions Min Max

Unit

T

DSIC

Recipient IC data setup time (from data valid until STROBE edge)

2

4.8 ns

T

DHIC

Recipient IC data hold time (from STROBE edge until data becomes

invalid)

1

4.8 ns

T

DVSIC

Sender IC data valid setup time (from data valid until STROBE edge)

3

9.5 ns

T

DVHIC

9.0 ns

1. All timing measurement switching point (low-to-high and high-to-low)

2. The correct data value is captured by the Recipient given input data with a slew rate of 0.4 V/ns rising and falling and the input

STROBE with a slew rate of 0.4 V/ns rising and falling at TDSIC and TDHIC timing (as measured through 1.5 V).

3. The parameters TDVSIC and TDVHIC are met for lumped capacitive loads of 15 and 40 pf at the IC where all signals have the

same capacitive load value. Noise that may couple onto the output signals from external sources has not been included in

these values.

Figure 7-8: Initiating an Ultra DMA Data-In Burst

Notes:

1. The definitions for the DIOW-:STOP, DIOR-:HDMARDY-:HSTROBE, and IORDY:DDRARDY-: DSTROBE signal lines are not

in effect until DMARQ and DMACK are asserted.

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Figure 7-9: Sustained Ultra DMA Data-In Burst

Notes:

1. DD(15:0) and DSTROBE signals are shown at both the host and the device to emphasize that cable settling time as well as

cable propagation delay will not allow the data signals to be considered stable at the host until some time after they are driven

by the device.

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Figure 7-10: Sustained Ultra DMA Data-In Burst

Notes:

1. The host may assert STOP to request termination of the Ultra DMA burst no sooner than TRP after HDMARDY# is negated.

2. After negating HDMARDY#, the host may receive zero, one, two, or three more data words from the device.

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Figure 7-11: Device Terminating and Ultra DMA Data-In Burst

Notes:

1. The definitions for the STOP, HDMARDY, and DSTROBE signal lines are no longer in effect after DMARQ and DMACK are

negated.

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28

Figure 7-12: Host Terminating and Ultra DMA Data-In Burst

Notes:

1. The definitions for the STOP, HDMARDY, and DSTROBE signal lines are no longer in effect after DMARQ and DMACK are

negated.

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AP-CFxxxxE3XR-XXXXXXK

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Figure 7-13: Initiating an Ultra DMA Data-Out Burst

Notes:

1. The definitions for the STOP, DDMARDY, and HSTROBE signal lines are no longer in effect after DMARQ and DMACK are

negated.

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AP-CFxxxxE3XR-XXXXXXK

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Figure 7-14: Sustained Ultra DMA Data-Out Burst

Notes:

1. DD(15:0) and HSTROBE signals are shown at both the host and the device to emphasize that cable settling time as well as

cable propagation delay will not allow the data signals to be considered stable at the host until some time after they are driven

by the host.

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AP-CFxxxxE3XR-XXXXXXK

31

Figure 7-15: Device Pausing and Ultra DMA Data-Out Burst

Notes:

1. The host may negate DMARQ to request termination of the Ultra DMA burst no sooner than TRP after DDMARDY# is negated.

2. After negating DDMARDY#, the host may receive zero, one, two, or three more data words from the host.

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AP-CFxxxxE3XR-XXXXXXK

32

Figure 7-16: Host Terminating and Ultra DMA Data-Out Burst

Notes:

1. The definitions for the STOP, DDMARDY, and HSTROBE signal lines are no longer in effect after DMARQ and DMACK are

negated.

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AP-CFxxxxE3XR-XXXXXXK

33

Figure 7-17: Device Terminating and Ultra DMA Data-Out Burst

Notes:

1. The definitions for the STOP, DDMARDY, and HSTROBE signal lines are no longer in effect after DMARQ and DMACK are

negated.

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AP-CFxxxxE3XR-XXXXXXK

34

7.2.8 Media Side Interface I/O Timing Specifications

Table 7-13: Timing Parameter

Symbol Parameter Min Max Units

T

CLS

FCLE Setup Time 20 - ns

T

CLH

FCLE Hold Time 40 - ns

T

CS

FCE# Setup Time 40 - ns

T

CH

FCE# Hold Time for Command/Data Write Cycle 40 - ns

T

CHR

FCE# Hold Time for Sequential Read Last Cycle - 40 ns

T

WP

FWE# Pulse Width 20 - ns

T

WH

FWE# High Hold Time 20 - ns

T

WC

Write Cycle Time 40 - ns

T

ALS

FALE Setup Time 20 - ns

T

ALH

FALE Hold Time 40 - ns

T

DS

FAD[15:0] Setup Time 20 - ns

T

DH

FAD[15:0] Hold Time 20 - ns

T

RP

FRE# Pulse Width 20 - ns

T

RR

Ready to FRE# Low 40 - ns

T

RES

FRE# Data Setup Access Time 20 - ns

T

RC

Read Cycle Time 40 - ns

T

REH

FRE# High Hold Time 20 - ns

T

RHZ

FRE# High to Data Hi-Z 5 - ns

Note: All AC specifications are guaranteed by design.

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AP-CFxxxxE3XR-XXXXXXK

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Figure 7-18: Media Command Latch Cycle

Figure 7-19: Media Access Latch Cycle

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Figure 7-20: Media Data Loading Latch Cycle

Figure 7-21: Media Data Read Cycle

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8. Physical Characteristics

8.1 Dimension

TABLE 8-1: Type I CFC physical specification

Length:

36.40 +/- 0.15mm (1.433+/- 0.06 in.)

Width:

42.80 +/- 0.10mm (1.685+/- 0.04 in.)

Thickness (Including Label Area):

3.3mm+/-0.10mm (0.130+/-0.04in.)

FIGURE 8-1: Physical dimension

Unit: mm

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9. Product Ordering Information

9.1 Product Code Designations

A P – C F x x x x E 3 X R – XXXXXXK

CFC Type

Capacity:

128M: 128MB

256M: 256MB

512M: 512MB

001G: 1GB

002G: 2GB

004G: 4GB

008G: 8GB

016G: 16GB

Model Name

Apacer Product Code

Configuration

E: Standard

F: High Speed

Specification

NR: Non-Removable Setting

NDNR: Non-DMA + Non-Removable

ETNR: Ext. Temp. + Non-Removable

ETNDNR: Ext. Temp + Non-DMA + Non-Removable

K: Value Added Ⅲ

RoHS Compliant

Controller Type

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9.2 Valid Combinations

Standard Temperature

Non-Removable

Standard High Speed

Capacity Model Number Capacity Model Number

128MB AP-CF128ME3ER-NRK 256MB AP-CF256ME3FR-NRK

256MB AP-CF256ME3ER-NRK 512MB AP-CF512ME3FR-NRK

512MB AP-CF512ME3ER-NRK 1GB AP-CF001GE3FR-NRK

1GB AP-CF001GE3ER-NRK 2GB AP-CF002GE3FR-NRK

2GB AP-CF002GE3ER-NRK 4GB AP-CF004GE3FR-NRK

16GB AP-CF016GE3ER-NRK 8GB AP-CF008GE3FR-NRK

Non-DMA & Non-Removable

Standard High Speed

Capacity Model Number Capacity Model Number

128MB AP-CF128ME3ER-NDNRK 256MB AP-CF256ME3FR-NDNRK

256MB AP-CF256ME3ER-NDNRK 512MB AP-CF512ME3FR-NDNRK

512MB AP-CF512ME3ER-NDNRK 1GB AP-CF001GE3FR-NDNRK

1GB AP-CF001GE3ER-NDNRK 2GB AP-CF002GE3FR-NDNRK

2GB AP-CF002GE3ER-NDNRK 4GB AP-CF004GE3FR-NDNRK

16GB AP-CF016GE3ER-NDNRK 8GB AP-CF008GE3FR-NDNRK

Value Added

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AP-CFxxxxE3XR-XXXXXXK

40

Extended Temperature

Non-Removable

Standard High Speed

Capacity Model Number Capacity Model Number

128MB AP-CF128ME3ER-ETNRK 256MB AP-CF256ME3FR-ETNRK

256MB AP-CF256ME3ER-ETNRK 512MB AP-CF512ME3FR-ETNRK

512MB AP-CF512ME3ER-ETNRK 1GB AP-CF001GE3FR-ETNRK

1GB AP-CF001GE3ER-ETNRK 2GB AP-CF002GE3FR-ETNRK

2GB AP-CF002GE3ER-ETNRK 4GB AP-CF004GE3FR-ETNRK

16GB AP-CF016GE3ER-ETNRK 8GB AP-CF008GE3FR-ETNRK

Non-DMA & Non-Removable

Standard High Speed

Capacity Model Number Capacity Model Number

128MB AP-CF128ME3ER-ETNDNRK

256MB

AP-CF256ME3FR-ETNDNRK

256MB AP-CF256ME3ER-ETNDNRK

512MB

AP-CF512ME3FR-ETNDNRK

512MB AP-CF512ME3ER-ETNDNRK

1GB AP-CF001GE3FR-ETNDNRK

1GB AP-CF001GE3ER-ETNDNRK

2GB AP-CF002GE3FR-ETNDNRK

2GB AP-CF002GE3ER-ETNDNRK

4GB AP-CF004GE3FR-ETNDNRK

16GB AP-CF016GE3ER-ETNDNRK

8GB AP-CF008GE3FR-ETNDNRK

Value Added

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AP-CFxxxxE3XR-XXXXXXK

41

Revision History

Revision Description Date

1.0 Official release Mar 8, 2011

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Global Presence

Taiwan (Headquarters)

Apacer Technology Inc.

4

th

Fl, 75 Xintai 5

th

Rd., Sec.1

Hsichih, New Taipei City

Taiwan 221

R.O.C.

Tel: +886-2-2698-2888

Fax: +886-2-2698-2889

amtsales@apacer.com

U.S.A.

Apacer Memory America, Inc.

386 Fairview Way, Suite102,

Milpitas, CA 95035

Tel: 1-408-518-8699

Fax: 1-408-935-9611

sa@apacerus.com

Japan

Apacer Technology Corp.

5F, Matsura Bldg., Shiba, Minato-Ku

Tokyo, 105-0014, Japan

Tel: 81-3-5419-2668

Fax: 81-3-5419-0018

jpservices@apacer.com

Europe

Apacer Technology B.V.

Aziëlaan 22,

5232 BA 's-Hertogenbosch,

The Netherlands

Tel: 31-73-645-9620

Fax: 31-73-645-9629

sales@apacer.nl

China

Apacer Electronic (Shanghai) Co., Ltd

1301, No.251,Xiaomuqiao Road, Shanghai,

200032, China

Tel: 86-21-5529-0222

Fax: 86-21-5206-6939

sales@apacer.com.cn

India

Apacer Technologies Pvt Ltd,

#1064, 1st Floor, 7th ‘A’ Main,

3rd Block Koramangala, Bangalore – 560 034

Tel: +91 80 4152 9061/62/63

Fax: +91 80 4170 0215

sales_india@apacer.com

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Apacer:

AP-CF001GE3FR-ETNDNRK AP-CF001GE3FR-ETNRK AP-CF001GE3FR-NDNRK AP-CF001GH4FR-ETNDNRK

AP-CF001GH4FR-ETNRK AP-CF001GH4FR-NDNRK AP-CF001GH4FR-NRK AP-CF002GE3FR-ETNDNRK AP-

CF002GE3FR-NDNRK AP-CF002GE3FR-NRK AP-CF002GH4FR-ETNDNRK AP-CF002GH4FR-ETNRK AP-

CF002GH4FR-NDNRK AP-CF002GH4FR-NRK AP-CF004GE3FR-ETNDNRK AP-CF004GE3FR-NDNRK AP-

CF004GH4FR-ETNDNRK AP-CF004GH4FR-ETNRK AP-CF004GH4FR-NDNRK AP-CF004GH4FR-NRK AP-

CF008GE3FR-ETNDNRK AP-CF008GE3FR-ETNRK AP-CF008GE3FR-NDNRK AP-CF008GH4FR-ETNDNRK AP-

CF008GH4FR-ETNRK AP-CF008GH4FR-NDNRK AP-CF128ME3ER-ETNDNRK AP-CF128ME3ER-ETNRK AP-

CF128ME3ER-NDNRK AP-CF128MH4ER-ETNDNRK AP-CF128MH4ER-ETNRK AP-CF128MH4ER-NDNRK AP-

CF128MH4ER-NRK AP-CF256ME3FR-NDNRK AP-CF256ME3FR-NRK AP-CF256MH4FR-ETNDNRK AP-

CF256MH4FR-ETNRK AP-CF256MH4FR-NDNRK AP-CF256MH4FR-NRK AP-CF512ME3FR-ETNDNRK AP-

CF512ME3FR-ETNRK AP-CF512ME3FR-NDNRK AP-CF512ME3FR-NRK AP-CF512MH4FR-ETNDNRK AP-

CF512MH4FR-ETNRK AP-CF512MH4FR-NDNRK AP-CF512MH4FR-NRK