2SK4097LS Ordering number : ENA0775A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4097LS General-Purpose Switching Device Applications Features * * * * Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Symbol IDc*1 IDpack*2 Drain Current (DC) Drain Current (Pulse) Conditions Ratings VDSS VGSS IDP Unit 500 V 30 V Limited only by maximum temperature 9.5 A Tc=25C (SANYO's ideal heat dissipation condition)*3 8.3 A PW10s, duty cycle1% 38 A 2.0 W Allowable Power Dissipation PD 35 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *4 EAS 280 mJ Avalanche Current *5 IAV 9.5 A Tc=25C (SANYO's ideal heat dissipation condition)*3 *1 Shows chip capability *2 Package limited *3 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=9.5A *5 L5mH, single pulse Marking : K4097 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1007 TI IM TC-00000933 / 60607QB TI IM TC-00000726 No. A0775-1/5 2SK4097LS Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current VGS=30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A RDS(on) Ciss ID=5A, VGS=10V VDS=30V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=30V, f=1MHz VDS=30V, f=1MHz Turn-ON Delay Time td(on) tr td(off) tf Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs min ID=10mA, VGS=0V VDS=400V, VGS=0V VGS(off) yfs Cutoff Voltage Ratings Conditions typ Unit max 500 V 100 A 100 nA 5 V 0.65 3 3 6 S 0.5 750 pF 150 pF 35 pF See specified Test Circuit. 16 ns See specified Test Circuit. 44 ns See specified Test Circuit. 102 ns See specified Test Circuit. 47 ns 30 nC 5.2 nC 0.9 Gate-to-Drain "Miller" Charge Qgd VDS=200V, VGS=10V, ID=9.5A VDS=200V, VGS=10V, ID=9.5A VDS=200V, VGS=10V, ID=9.5A Diode Forward Voltage VSD IS=9.5A, VGS=0V 17 nC 1.2 V Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit VIN Avalanche Resistance Test Circuit VDD=200V L 10V 0V 50 RG ID=5A RL=40 VIN D VOUT PW=10s D.C.0.5% 2SK4097LS 10V 0V G 50 VDD 2SK4097LS P.G RGS=50 S No. A0775-2/5 2SK4097LS ID -- VDS 30 ID -- VGS 30 VDS=20V Tc=25C 10V 8V 20 15 10 6V 5 Tc= --25C 25 15V Drain Current, ID -- A Drain Current, ID -- A 25 25C 20 75C 15 10 5 VGS=5V 0 0 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- 8 10 12 14 16 18 20 IT12373 RDS(on) -- Tc 1.2 1.0 Tc=75C 0.8 0.6 25C 0.4 --25C 0.2 6.5 7.0 7.5 8.0 8.5 9.0 9.5 C 75 2 1.0 7 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 25 75 100 125 150 IT12375 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT12376 1.4 IT12377 Ciss, Coss, Crss -- VDS 5 VDD=200V VGS=10V 5 50 10 7 5 0.01 0.2 3 SW Time -- ID 7 0 IS -- VSD 3 2 5 2 --25 VGS=0V 3 2 5C --2 3 0.2 5 Source Current, IS -- A = Tc 0.4 Case Temperature, Tc -- C C 25 5 0.6 IT12374 VDS=10V 7 =1 S VG 0 --50 10.0 yfs -- ID 10 A =5 , ID V 0 0.8 25C 6.0 1.0 C 5.5 1.2 --25C 1.4 1.4 Tc=7 5 Static Drain-to-Source On-State Resistance, RDS(on) -- 1.6 2 Forward Transfer Admittance, yfs -- S 6 Gate-to-Source Voltage, VGS -- V 1.6 Gate-to-Source Voltage, VGS -- V f=1MHz 3 2 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 4 ID=5A 1.8 3 0.1 2 IT12372 RDS(on) -- VGS 2.0 0 5.0 0 30 2 td (off) 100 7 tf 5 3 tr 3 Coss 2 100 7 5 Crss 3 td(on) 2 Ciss 1000 7 5 2 10 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT12378 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT12379 No. A0775-3/5 2SK4097LS VGS -- Qg 10 VDS=200V ID=9.5A 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC 1.5 1.0 0.5 10 DC 1.0 7 5 3 2 10 s 0 IDpack(*2)=8.3A 1m 10 ms 0m s op er ati on s s Operation in this area is limited by RDS(on). 0.1 7 5 3 2 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 71000 IT12381 PD -- Tc 40 2.0 10 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 30 PW10s IDc(*1)=9.5A 10 7 5 3 2 IT12380 35 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT12337 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT12382 EAS -- Ta 120 Avalanche Energy derating factor -- % IDP=38A 0.01 0.1 PD -- Ta 2.5 ASO 7 5 3 2 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT10478 No. A0775-4/5 2SK4097LS Note on usage : Since the 2SK4097LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2007. Specifications and information herein are subject to change without notice. PS No. A0775-5/5