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BD433/435/437 — NPN Epitaxia l Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BD433/435/437 Rev. B0 1
July 2011
BD433/435/437
NPN Epitaxial Silicon Transistor
Features
• Medium Power Linear and Switching Applications
• Complement to BD434, BD436 and BD438 respectively
Ordering Information
* The suffix "S" of FSID denotes TO126 package.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Part Number Marking Package Packing Method Remarks
BD433S BD433 TO-126 BULK
BD435S BD435 TO-126 BULK
BD435STU BD435 TO-126 RAIL
BD437S BD437 TO-126 BULK
Symbol Parameter Value Units
VCBO Collector -Base Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
VCES Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
VCEO Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 4 A
ICP *Collector Current (Pulse) 7 A
IB Base Current 1 A
PC Collector Dissipation (TC = 25°C) 36 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 to 150 °C
1TO-126
1. Emitter 2.Collector 3.Base
BD433/435/437 — NPN Epitaxia l Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BD433/435/437 Rev. B0 2
Electrical Characteristics TA = 25°C unless otherwise noted
* Pulse Test: PW≤300μs, duty Cycle≤1.5% Pulsed
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: BD433
: BD435
: BD437
IC = 100mA, IB = 0 22
32
45
V
V
V
ICBO Collector Cut-off Current
: BD433
: BD435
: BD437
VCB = 22V, IE = 0
VCB = 32V, IE = 0
VCB = 45V, IE = 0
100
100
100
μA
μA
μA
ICEO Collector Cut-off Current
: BD433
: BD435
: BD437
VCE = 22V, VBE = 0
VCE = 32V, VBE = 0
VCE = 45V, VBE = 0
100
100
100
μA
μA
μA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE * DC Current Gain
: BD433/435
: BD437
: ALL DEVICE
: BD433/435
: BD437
VCE = 5V, IC = 10mA
VCE = 1V, IC = 500mA
VCE = 1V, IC = 2A
40
30
85
50
40
130
130
140
VCE(sat) * Collector-Emitter Saturation Volt-
age : BD433
: BD435
: BD437
IC = 2A, IB = 0.2A
0.2
0.2
0.2
0.5
0.5
0.6
V
V
V
VBE(on) * Base-Emitter ON Voltage
: BD433
: BD435
: BD437
VCE = 1V, IC = 2A 1.1
1.1
1.2
V
V
V
fTCurrent Gain Bandwidth Product VCE = 1V, IC = 250mA 3 MHz
BD433/435/437 — NPN Epitaxia l Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BD433/435/437 Rev. B0 3
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capac itan ce
Figure 5. Safe Operating Area Figure 6. Power Derating
0.01 0.1 1 10 100
1
10
100
1000 VCE = 1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1IC = 10 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE = 1V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
0.1 1 10 100 1000
1
10
100
1000
CCBO(pF), COLLECTOR BASE CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
1 10 100
0.1
1
10
10μs
100μs
1ms
10ms
BD433
IC MAX. (Pulsed)
BD437
BD435
DC
IC Max. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
6
12
18
24
30
36
42
48
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
BD433/435/437 — NPN Epitaxia l Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BD433/435/437 Rev. B0 4
Physical Dimension
127(6
$7+,63$&.$*('2(6127&203/<72$1<
&85(173$&.$*,1*67$1'$5'
%$//',0(16,216$5(,10,//,0(7(56
&',0(16,216$5((;&/86,9(2)%855602/')/$6+
$1'7,(%$5(;7586,216
')257(50,1$//(1*7+6((7$%/(
('5$:,1*),/(1$0($1'5(9,6,210.772$$UHY
0$;
'
&2'( /(1*7+'
76678
7678
121(
352'8&7,21 7(50,1$/
67'/(1*7+
;
;
TO-126
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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