Features
nFloating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negativ e tr ansient voltage
dV/dt immune
nGate drive supply range from 10 to 20V
nUndervoltage lockout for both channels
nSeparate logic supply range from 5 to 20V
Logic and power ground ±5V offset
nCMOS Schmitt-triggered inputs with pull-down
nCycle by cycle edge-triggered shutdown logic
nMatched propagation delay for both channels
nOutputs in phase with inputs
Data Sheet No. PD-6.074
IR2110L6
HIGH AND LOW SIDE DRIVER
Product Summary
VOFFSET 600V max.
IO+ /- 2A / 2A
VOUT 10 - 20V
ton/off (typ.) 120 & 94 ns
Delay Matching 10 ns
Description
The IR2110L6 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs. The
output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. Propa-
gation delays are matched to simplify use in high fre-
quency applications. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
Parameter Min. Max. Units
VBHigh Side Floating Supply Voltage -0.5 VS + 20
VSHigh Side Floating Supply Offset Voltage — 600
VHO High Side Floating Output Voltage VS - 0.5 VB + 0.5
VCC Low Side Fixed Supply Voltage -0.5 20
VLO Low Side Output Voltage -0.5 VCC + 0.5 V
VDD Logic Supply Voltage -0.5 VSS + 20
VSS Logic Supply Offset Voltage VCC - 20 VCC + 0.5
VIN Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 VDD + 0.5
dVs/dt Allo wab le Offset Supply V oltage Transient (Figure 2) — 5 0 V/ns
PDP ac kage P ower Dissipation @ TA ≤ +25°C — 1.6 W
RθJA Thermal Resistance, Junction to Ambient — 7 5 °C/W
TJJunction T emperature -55 125
TSStorage T emperature -55 150 °C
TLLead Temperature (Solder ing, 10 seconds) — 3 00
Weight 1.5 (typical) g
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute volt-
ages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
IR2110L6
Tj = 25°C Tj =
-55 to 125°C
Parameter Min. Typ. Max. Min. Max. Units Test Conditions
ton Turn-On Propagation Delay — 120 150 — 260 VS = 0V
toff Turn-Off Propagation Delay — 94 125 — 22 0 VS = 600V
tsd Shutdown Propagation Delay — 11 0 140 — 23 5 VS = 600V
trTurn-On Rise Time — 2535—50 C
L = 1000pf
tfTurn-Off F all Time — 17 25 — 40 CL = 1000pf
MT Dela y Matching, HS & LS Turn-On/Off — — 10 — — |Hton - Lton| / |Htoff - Ltoff|
ns
Dynamic Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 1 5 V , and VSS = COM unless otherwise specified. The dynamic electrical characteristics are
measured using the test circuit shown in Figure 3.
Recommended Operating Conditions
The Input/Output logic timing diagr am is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in Figures 36 and 37.
Parameter Min. Max. Units
VBHigh Side Floating Supply Absolute Voltage VS + 10 VS + 20
VSHigh Side Floating Supply Offset Voltage -4 600
VHO High Side Floating Output Voltage VSVB
VCC Low Side Fixed Supply Voltage 10 20 V
VLO Low Side Output Voltage 0 VCC
VDD Logic Supply Voltage VSS + 5 VSS + 20
VSS Logic Supply Offset Voltage -5 5
VIN Logic Input Voltage (HIN, LIN & SD) VSS VDD
Typical Connection
HIN
up to 500V
TO
LOAD
VDD VB
VS
HO
LO
COM
HIN
LIN
VSS
SD
VCC
LIN
VDD
SD
VSS
VCC
600V
IR2110L6
Tj = 25°C Tj =
-55 to 125°C
Parameter Min. Typ. Max. Min. Max. Units Test Conditions
VIH Logic “1” Input Voltage 3.1 — — 3.3 — VDD = 5V
6.4 — — 6.8 — VDD = 10V
9.5 — — 10 — VVDD = 15V
12.5 — — 13.3 — VDD = 20V
VIL Logic “0” Input Voltage — — 1.8 — 1.7 VDD = 5V
— — 3.8 — 3.6 VDD = 10V
— — 6 — 5.7 VVDD = 15V
— — 8.3 — 7.9 VDD = 20V
VOH High Lev el Output Voltage , VBIAS - VO— 0.7 1.2 — 1.5 VIN =VIH, IO = 0A
VOL Low Level Output Voltage, VO— — 0.1 — 0.1 VIN =VIH, IO = 0A
ILK Offset Supply Leakage Current — — 50 — 250 VB = VS = 600V
IQBS Quiescent VBS Supply Current — 125 230 — 500 µA VIN =0V or VDD
IQCC Quiescent VCC Supply Current — 180 340 — 600 VIN =0V, or VDD
IQDD Quiescent VDD Supply Current — 5 30 — 60 VIN =0V, or VDD
IIN+ Logic “1” Input Bias Current — 15 40 — 70 VIN = VDD
IIN- Logic “0” Input Bias Current — — 1.0 — 10 VIN = 0V
VBSUV+ VBS Supply Undervoltage P ositive 7.5 8.6 9.7 — —
Going Threshold
VBSUV- VBS Supply Underv oltage Negative 7.0 8.2 9.4 — —
Going Threshold
VCCUV+ VCC Supply Underv oltage Positive 7.4 8.5 9.6 — — V
Going Threshold
VCCUV- VCC Supply Undervoltage Negative 7.0 8.2 9.4 — —
Going Threshold
IO+ Output High Short Circuit Pulsed 2.0 — — — — V O = 0V, VIN = VDD
Current APW ≤ 10 µs
IO- Output Low Short Circuit Pulsed 2.0 — — — — VO = 15V, VIN = 0V
Current PW ≤ 10 µs
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and are
applicable to all three logic input pins: HIN, LIN and SD. The VO and IO parameters are ref erenced to COM or VS and are
applicab le to the respective output pins: HO or LO .
IR2110L6
Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit
Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition
Figure 6. Delay Matching Waveform Definitions
Figure 5. Shutdo wn Wa veform Definitions
SD
tsd
HO
LO
50%
90%
HIN
LIN
tr
ton tf
toff
HO
LO
50% 50%
90% 90%
10% 10%
HIN
LIN
HO
50% 50%
10%
LO
90%
MT
HOLO
MT
HV = 10 to 600V
(0 to 600V)
IR2110L6
Figure 9B. Shutdown Time vs. Voltag e
Figure 8A. T urn-Off Time vs. Temperature Figure 8B. Turn-Off Time vs. V oltage
Figure 7A. T urn-On Time vs. Temperature Figure 7B. T urn-On Time vs. V oltage
Figure 9A. Shutdown Time vs. Temperature
0
50
100
150
200
250
10 12 14 16 18 20
VBIAS Supply Voltage (V)
Turn-On Delay Time (n
s)
Max.
Typ.
0
50
100
150
200
250
-50 -25 0 25 50 75 100 125
Temperature (°C)
T
urn-On Delay Time (n
s)
Max.
Typ.
0
50
100
150
200
250
-50 -25 0 25 50 75 100 125
Temperature (°C)
Turn-Off Delay Time (n
s)
Max.
Typ.
0
50
100
150
200
250
10 12 14 16 18 20
VBIAS Supply Voltage (V)
T
urn-Off Delay Time (n
s)
Max.
Typ.
0
50
100
150
200
250
10 12 14 16 18 20
VBIAS Supply Voltage (V)
S
hutdown Delay time (n
s)
Max.
Typ.
0
50
100
150
200
250
-50 -25 0 25 50 75 100 125
Temperature (°C)
S
hutdown Delay Time (n
s)
Max.
Typ.
IR2110L6
Figure 12A. Logic “1” Input Threshold vs. Temperature Figure 12B. Logic “1” Input Threshold vs. Voltage
Figure 10A. Turn-On Rise Time vs. Temperature
Figure 11A. Turn-Off Fall Time vs. Temperature Figure 11B. Turn-Off Fall Time vs. Voltage
Figure 10B. T urn-On Rise Time vs. V oltage
0
20
40
60
80
100
-50 -25 0 25 50 75 100 125
Temperature (°C)
Turn-On Rise Time (n
s)
Max .
Typ.
0
20
40
60
80
100
10 12 14 16 18 20
VBIAS Supply Voltage (V)
Turn-On Rise Time (n
s)
Max.
Typ.
0
10
20
30
40
50
-50 -25 0 25 50 75 100 125
Temperature (°C)
T
urn-Off Fall Time (ns
)
Max.
Typ.
0
10
20
30
40
50
10 12 14 16 18 20
VBIAS Supply Voltage (V)
T
urn-Off Fall Time (ns
)
Max.
Typ.
0.0
3.0
6.0
9.0
12.0
15.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
L
ogic "1" Input Threshold (V
)
Min.
0.0
3.0
6.0
9.0
12.0
15.0
5 7.5 10 12.5 15 17.5 20
VDD Logic Supply Voltage (V)
L
ogic "1" Input Threshold (V
)
Min.
IR2110L6
Figure 13A. Logic “0” Input Threshold vs. Temperature Figure 13B. Logic “0” Input Threshold vs. Voltage
Figure 14A. High Level Output vs. Temperature Figure 14B. High Level Output vs. Voltage
Figure 15B. Low Level Output vs. Voltag eFigure 15A. Low Level Output vs. Temperature
0.0
3.0
6.0
9.0
12.0
15.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
L
ogic "0" Input Threshold (V
)
Max.
0.0
3.0
6.0
9.0
12.0
15.0
5 7.5 10 12.5 15 17.5 20
VDD Logic Supply Voltage (V)
L
ogic "0" Input Threshold (V
)
Max.
0.00
1.00
2.00
3.00
4.00
5.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
H
igh Level Output Voltage (V
)
Max.
0.00
0.20
0.40
0.60
0.80
1.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
L
ow Level Output Voltage (V
)
Max.
0.00
1.00
2.00
3.00
4.00
5.00
10 12 14 16 18 20
VBIAS Supply Voltage (V)
High Level Output Voltage (V
)
Max.
0.0
3.0
6.0
9.0
12.0
15.0
5 7.5 10 12.5 15 17.5 20
VDD Logic Supply Voltage (V)
L
ogic "1" Input Threshold (V
)
Min.
IR2110L6
Figure 16B. Offset Supply Current vs. VoltageFigure 16A. Offset Supply Current vs. Temperature
Figure 18A. VCC Supply Current vs. Temperature Figure 18B. V CC Supply Current vs. Voltage
Figure 17A. VBS Supply Current vs. Temperature Figure 17B. V BS Supply Current vs. Voltage
0
125
250
375
500
625
10 12 14 16 18 20
VCC Fixed Supply Voltage (V)
V
CC Supply Current (µA
)
Max.
Typ.
0
125
250
375
500
625
-50 -25 0 25 50 75 100 125
Temperature (°C)
V
CC Supply Current (µA
)
Max.
Typ.
0
100
200
300
400
500
-50 -25 0 25 50 75 100 125
Temperature (°C)
V
BS Supply Current (µA
)
Max.
Typ.
0
100
200
300
400
500
10 12 14 16 18 20
VBS Floating Supply Voltage (V)
V
BS Supply Current (µA
)
Max.
Typ.
0
100
200
300
400
500
0 100 200 300 400 500
VB Boost Voltage (V)
O
ffset Supply Leakage Current (µA
)
Max.
0
100
200
300
400
500
-50 -25 0 25 50 75 100 125
Temperature (°C)
O
ffset Supply Leakage Current (µA
)
Max.
IR2110L6
Figure 21A. Logic “0” Input Current vs. Temperature Figure 21B. Logic “0” Input Current vs. Voltage
Figure 19A. VDD Supply Current vs. Temperature Figure 19B. VDD Supply Current vs. Voltage
Figure 20A. Logic “1” Input Current vs. Temperature Figure 20B. Logic “1” Input Current vs. Volta g e
0
20
40
60
80
100
-50 -25 0 25 50 75 100 125
Temperature (°C)
V
DD Supply Current (µA
)
Max.
Typ.
0
20
40
60
80
100
5 7.5 10 12.5 15 17.5 20
VDD Logic Supply Voltage (V)
V
DD Supply Current (µA
)
Max.
Typ.
0
20
40
60
80
100
-50 -25 0 25 50 75 100 125
Temperature (°C)
Logic "1" Input Bias Current (µA
)
Max.
Typ.
0
20
40
60
80
100
5 7.5 10 12.5 15 17.5 20
VDD Logic Supply Voltage (V)
L
ogic "1" Input Bias Current (µA
)
Max .
Typ.
0.00
1.00
2.00
3.00
4.00
5.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
L
ogic "0" Input Bias Current (µA
)
Max.
0.00
1.00
2.00
3.00
4.00
5.00
5 7.5 10 12.5 15 17.5 20
VDD Logic Supply Voltage (V)
L
ogic "0" Input Bias Current (µA
)
Max.
IR2110L6
6.0
7.0
8.0
9.0
10.0
11.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
V
CC Undervoltage Lockout + (V
)
Max.
Typ.
Min.
6.0
7.0
8.0
9.0
10.0
11.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
VBS Undervoltage Lockout + (V
)
Max.
Typ.
Min.
Figure 22. VBS Under voltage (+) vs. Temperature Figure 23. V BS Undervoltag e (-) vs. Temperature
Figure 24. VCC Undervolta ge (+) vs. Temperature Figure 25. VCC Undervoltage (-) vs. Temperature
Figure 26A. Output Source Current vs. Temperature Figure 26B. Output Source Current vs. Voltage
6.0
7.0
8.0
9.0
10.0
11.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
VBS Undervoltage Lockout - (V
)
Max.
Typ.
Min.
6.0
7.0
8.0
9.0
10.0
11.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
V
CC Undervoltage Lockout - (V
)
Max.
Typ.
Min.
0.00
1.00
2.00
3.00
4.00
5.00
10 12 14 16 18 20
VBIAS Supply Voltage (V)
O
utput Source Current (A
)
Min.
Typ.
0.00
1.00
2.00
3.00
4.00
5.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
Output Source Current (A
)
Min.
Typ.
IR2110L6
Figure 28. IR2110L6 TJ vs. Frequency (IRFBC20)
RGATE = 33ΩΩ
ΩΩ
Ω, VCC = 15V Figure 29. IR2110L6 TJ vs. Frequency (IRFBC30)
RGATE = 22ΩΩ
ΩΩ
Ω, VCC = 15V
Figure 27B. Output Sink Current vs. Volta g eFigure 27A. Output Sink Current vs. Temperature
Figure 31. IR2110L6 TJ vs. Frequency (IRFPE50)
RGATE = 10ΩΩ
ΩΩ
Ω, VCC = 15V
Figure 30. IR2110L6 TJ vs. Frequency (IRFBC40)
RGATE = 15ΩΩ
ΩΩ
Ω, VCC = 15V
0.00
1.00
2.00
3.00
4.00
5.00
10 12 14 16 18 20
VBIAS Supply Voltage (V)
O
utput Sink Current (A
)
Min.
Typ.
0
25
50
75
100
125
150
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
J
unction Temperature (°C
)
320V
14 0V
10V
0
25
50
75
100
125
150
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
J
unction Temperature (°C
)
320V
140V
10V
0
25
50
75
100
125
150
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
J
unction Temperature (°C
)
320V 140V
10V
0
25
50
75
100
125
150
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
J
unction Temperature (°C
)
320V 140V
10V
0.00
1.00
2.00
3.00
4.00
5.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
O
utput Sink Current (A
)
Min.
Typ.
IR2110L6
Figure 32. IR2110L6S TJ vs. Frequency (IRFBC20)
RGATE = 33ΩΩ
ΩΩ
Ω, VCC = 15V Figure 33. IR2110L6S TJ vs. Frequency (IRFBC30)
RGATE = 22ΩΩ
ΩΩ
Ω, VCC = 15V
Figure 36. Maximum VS Negative Offset vs.
VBS Supply Voltag e Figure 37. Maximum VSS Positive Offset vs.
VCC Supply Voltag e
Figure 34. IR2110L6S TJ vs. Frequency (IRFBC40)
RGATE = 15ΩΩ
ΩΩ
Ω, VCC = 15V Figure 35. IR2110L6S TJ vs. Frequency (IRFPE50)
RGATE = 10ΩΩ
ΩΩ
Ω, VCC = 15V
0
25
50
75
100
125
150
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
J
unction Temperature (°C
)
320V 140V
10V
0
25
50
75
100
125
150
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
J
unction Temperature (°C
)
320V 140V
10V
0
25
50
75
100
125
150
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
J
unction Temperature (°C
)
320V 140V
10V
0
25
50
75
100
125
150
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
J
unction Temperature (°C
)
320V 140V 10V
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
10 12 14 16 18 20
VBS Floating Supply Voltage (V)
V
S Offset Supply Voltage (V
)
Typ.
0.0
4.0
8.0
12.0
16.0
20.0
10 12 14 16 18 20
VCC Fixed Supply Voltage (V)
V
SS Logic Supply Offset Voltage (V
)
Typ.
IR2110L6
Lead
Symbol Description
VDD Logic supply
HIN Logic input for high side gate driver output (HO), in phase
SD Logic input for shutdown
LIN Logic input for low side gate driver output (LO), in phase
VSS Logic ground
VBHigh side floating supply
HO High side gate drive output
VSHigh side floating supply return
VCC Low side supply
LO Low side gate drive output
COM Low side return
VB
SD
LIN
VDD
PULSE
GEN
RSQ
VSS
UV
DETECT
DELAY
HV
LEVEL
SHIFT
VCC
PULSE
FILTER
UV
DETECT
VDD/VCC
LEVEL
SHIFT
VDD/VCC
LEVEL
SHIFT LO
VS
COM
RSQR
S
RQ
HIN
HO
Functional Block Diagram
Lead Definitions
IR2110L6
Case Outline and Dimensions — MO-036AB
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 6/96
VSS
LIN
SD
HIN
VDD
COM
LO
VCC
VS
VB
HO
Pin Assignment
