Diode
RapidSwitchingEmitterControlledDiode
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Datasheet
IndustrialPowerControl
2
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Rev.2.1,2014-09-18
RapidSwitchingEmitterControlledDiode
Features:
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge
•Lowforwardvoltageandstableovertemperature
•175°Cjunctionoperatingtemperature
•Easyparalleling
•Pb-freeleadplating;RoHScompliant
Applications:
•BoostdiodeinCCMPFC
Packagepindefinition:
•Pin1-anode(A1)
•Pin2andbackside-cathode(C)
•Pin3-anode(A2)
A1
C1
C2
A2
A1
A2
C
Key Performance and Package Parameters
Type Vrrm IfVf, Tvj=25°C Tvjmax Marking Package
IDP20C65D2 650V 2x 10A 1.6V 175°C C20ED2 PG-TO220-3
3
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Rev.2.1,2014-09-18
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings (electrical parameters per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistances (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Rev.2.1,2014-09-18
Maximum Ratings (electrical parameters per diode)
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter Symbol Value Unit
Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF20.0
10.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 30.0 A
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave IFSM 60.0 A
PowerdissipationTC=25°C Ptot 68.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
Thermal Resistances (per diode)
Parameter Symbol Conditions Max. Value Unit
Characteristic
Diode thermal resistance,1)
junction - case Rth(j-c) 2.20 K/W
Thermal resistance
junction - ambient Rth(j-a) 62 K/W
Electrical Characteristics (per diode), at Tvj = 25°C, unless otherwise specified
Value
min. typ. max.
Parameter Symbol Conditions Unit
Static Characteristic
Diode forward voltage VF
IF=10.0A
Tvj=25°C
Tvj=175°C
-
-
1.60
1.65
2.20
-
V
Reverse leakage current2) IR
VR=650V
Tvj=25°C
Tvj=175°C
-
-
4.0
250.0
40.0
-
µA
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
Value
min. typ. max.
Parameter Symbol Conditions Unit
Dynamic Characteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 7.0 - nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
2) Reverse leakage current per diode specified for operating conditions with zero voltage applied to the other diode.
5
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Rev.2.1,2014-09-18
Switching Characteristics (per diode), Inductive Load
Value
min. typ. max.
Parameter Symbol Conditions Unit
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time trr - 28 - ns
Diode reverse recovery charge Qrr - 0.16 - µC
Diode peak reverse recovery current Irrm - 8.6 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -740 - A/µs
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Diode reverse recovery time trr - 50 - ns
Diode reverse recovery charge Qrr - 0.13 - µC
Diode peak reverse recovery current Irrm - 4.3 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -130 - A/µs
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=350A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Switching Characteristics (per diode), Inductive Load
Value
min. typ. max.
Parameter Symbol Conditions Unit
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time trr - 35 - ns
Diode reverse recovery charge Qrr - 0.23 - µC
Diode peak reverse recovery current Irrm - 11.3 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -730 - A/µs
Tvj=175°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Diode reverse recovery time trr - 54 - ns
Diode reverse recovery charge Qrr - 0.18 - µC
Diode peak reverse recovery current Irrm - 5.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -190 - A/µs
Tvj=125°C,
VR=400V,
IF=10.0A,
diF/dt=350A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
6
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Rev.2.1,2014-09-18
Figure 1. Power dissipation per diode as a function of
case temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
Figure 2. Diode transient thermal impedance per diode
as a function of pulse width
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1
0.01
0.1
1D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.022723
8.0E-6
2
0.47244
1.2E-4
3
0.90303
6.7E-4
4
0.744775
4.5E-3
5
0.052669
0.05602283
6
1.6E-3
2.034609
Figure 3. Typical reverse recovery time as a function of
diode current slope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
0 500 1000 1500 2000 2500 3000
0
10
20
30
40
50
60
70
Tj=25°C, IF = 10A
Tj=175°C, IF = 10A
Figure 4. Typical reverse recovery charge per diode as
a function of diode current slope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
0 500 1000 1500 2000 2500 3000
0.00
0.05
0.10
0.15
0.20
0.25
0.30
Tj=25°C, IF = 10A
Tj=175°C, IF = 10A
7
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Rev.2.1,2014-09-18
Figure 5. Typical reverse recovery current per diode as
a function of diode current slope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
0 500 1000 1500 2000 2500 3000
0
5
10
15
20
25
Tj=25°C, IF = 10A
Tj=175°C, IF = 10A
Figure 6. Typical diode peak rate of fall of rev. rec.
current per diode as a function of diode
current slope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
0 500 1000 1500 2000 2500 3000
-1500
-1250
-1000
-750
-500
-250
0
Tj=25°C, IF = 10A
Tj=175°C, IF = 10A
Figure 7. Typical diode forward current per diode as a
function of forward voltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5
0
5
10
15
20
25
30
Tj=25°C
Tj=175°C
Figure 8. Typical diode forward voltage as a function of
junction temperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
25 50 75 100 125 150 175
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
IF=5A
IF=10A
IF=20A
8
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Rev.2.1,2014-09-18
PG-TO220-3
9
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Rev.2.1,2014-09-18
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10
IDP20C65D2
Emitter Controlled Diode Rapid 2 Common Cathode Series
Rev. 2.1, 2014-09-18
Revision History
IDP20C65D2
Revision: 2014-09-18, Rev. 2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2014-09-18 Final data sheet
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Published by
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81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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