APT200GN60JDQ4 APT200GN60JDQ4 TYPICAL PERFORMANCE CURVES 600V Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. * * * * * E E C G 600V NPT Field Stop Trench Gate: Low VCE(on) Easy Paralleling 10s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability 27 -T 2 SO "UL Recognized" ISOTOP (R) C G E Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT200GN60JDQ4 VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage 20 I C1 Continuous Collector Current @ TC = 25C 250 I C2 Continuous Collector Current @ TC = 110C 110 I CM SSOA PD TJ,TSTG Pulsed Collector Current 1 UNIT Volts Amps 600 @ TC = 150C Switching Safe Operating Area @ TJ = 150C 600A @600V Total Power Dissipation Operating and Storage Junction Temperature Range 568 Watts -55 to 150 C STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 25C) VCE(ON) I CES I GES RGINT TYP MAX 5 5.8 6.5 1.05 1.45 1.85 Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 125C) 1.65 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25C) 1.15 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125C) 1.19 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) 4 2 600 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Volts mA TBD Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor UNIT nA 3-2005 MIN Rev A Characteristic / Test Conditions 050-7611 Symbol APT200GN60JDQ4 DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA SCSOA td(on) tr td(off) tf Eon1 8.2 VGE = 15V 1180 VGE = V nC A 10 s 20 ns 1050 I C = 100A 50 RG = 5 7 TBD TJ = +25C 5 pF 600 55 4 UNIT 660 7, VCC = 400V Current Fall Time MAX 85 Inductive Switching (25C) Turn-off Delay Time J 1720 6 2810 Turn-on Delay Time Inductive Switching (125C) 55 VCC =400V 20 Current Rise Time Turn-off Delay Time VGE = 15V 1150 RG = 5 7 60 TBD I C = 100A Current Fall Time Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Turn-off Switching Energy Gate Charge VGE = 15V Eon1 Eoff 4000 TJ = 125C, R G = 5 7 Current Rise Time Turn-off Switching Energy tf f = 1 MHz VCC = 480V, VGE = 15V, Turn-on Delay Time Eoff td(off) 4610 15V, L = 100H,VCE = 600V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V TJ = 150C, R G = 5 Eon2 td(on) 14100 I C = 100A Short Circuit Safe Operating Area TYP Capacitance VCE = 300V Switching Safe Operating Area Turn-on Switching Energy MIN 44 55 TJ = +125C ns 1955 66 J 2865 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) .22 RJC Junction to Case (DIODE) .33 VIsolation WT Torque RMS Voltage (50-60Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.) Package Weight 2500 1.03 oz 29.2 gm For Combi devices, ICES includes both IGBT and FRED leackage. Ib*in 1.1 N*m See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive tun-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22) 6 Eoff is the clamped induvtive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7611 3 3-2005 2 10 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. C/W Volts Maximum Terminal & Mounting Torque 1 UNIT TYPICAL PERFORMANCE CURVES 15 & 10V 300 250 6.5V 200 150 6V 100 5.5V 50 IC, COLLECTOR CURRENT (A) 300 TJ = -55C 250 200 150 TJ = 25C 100 TJ = 125C 50 0 0 150 5.5V 100 5V FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 6V 200 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25C) 350 6.5V 250 0 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 400 300 50 5V 0 7.5V 7V 350 J VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 100A C T = 25C 14 0 200 IC = 200A 1.5 IC = 100A 1.0 IC = 50A 0.5 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 2.0 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 2.0 IC = 200A 1.5 IC = 100A 1.0 IC = 50A 0.5 0 25 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 300 IC, DC COLLECTOR CURRENT(A) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 2.5 400 600 800 1000 1200 1400 GATE CHARGE (nC) 250 200 150 Limited by Package 100 50 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 3-2005 7V Rev A 350 15 & 10V 400 7.5V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 400 APT200GN60JDQ4 450 050-7611 450 60 VGE = 15V 50 40 30 20 VCE = 400V 10 TJ = 25C, TJ =125C 0 RG = 5 L = 100 H tf, FALL TIME (ns) tr, RISE TIME (ns) 40 30 20 L = 100 H 5 RG = 5, L = 100H, VCE = 400V V = 400V CE V = +15V GE R = 5 G 10000 TJ = 125C,VGE =15V 8000 6000 4000 2000 TJ = 25C,VGE =15V 0 Eon2 150A , 40000 30000 Eoff 100A , 20000 Eon2 100A , 10000 Eoff 50A , Eon2 50A , 50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 G TJ = 25C, VGE = 15V 8000 6000 TJ = 125C, VGE = 15V 4000 2000 7000 Eoff 150A , J 50000 10000 = 400V V CE = +15V V GE R = 5 65 85 105 125 145 165 25 45 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (J) = 400V V CE = +15V V GE T = 125C TJ = 25C, VGE = 15V 40 0 45 65 85 105 125 145 165 25 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 60000 60 12000 EOFF, TURN OFF ENERGY LOSS (J) 12000 TJ = 125C, VGE = 15V 65 85 105 125 145 165 25 45 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current EON2, TURN ON ENERGY LOSS (J) 200 VCE = 400V RG = 5 0 0 SWITCHING ENERGY LOSSES (J) 400 20 10 3-2005 600 80 TJ = 25 or 125C,VGE = 15V Rev A VGE =15V,TJ=25C 800 100 RG = 5, L = 100H, VCE = 400V 50 050-7611 VGE =15V,TJ=125C 25 45 65 85 105 125 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 5 60 1000 0 25 45 65 85 105 125 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 0 APT200GN60JDQ4 1200 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 70 6000 5000 = 400V V CE = +15V V GE R = 5 Eoff,150A G Eon2,150A 4000 Eoff,100A 3000 2000 Eon2,100A 1000 Eoff,50A 0 0 Eon2,50A 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 20,000 5000 P C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies 10,000 1000 500 APT200GN60JDQ4 700 C0es 600 500 400 300 200 Cres 100 0 100 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.9 0.20 0.7 0.15 0.5 Note: 0.10 PDM 0.3 t2 0.05 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 0.05 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 50 0.0536 0.00826F 0.169 0.353F Power (watts) Case temperature. (C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL FMAX, OPERATING FREQUENCY (kHz) RC MODEL Junction temp. (C) 10 1 F = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf T = 125C J T = 75C C D = 50 % V = 400V CE R = 5 max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RJC G 25 50 75 100 125 150 175 200 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 3-2005 10-5 Rev A 0.1 0 t1 050-7611 ZJC, THERMAL IMPEDANCE (C/W) 0.25 APT200GN60JDQ4 APT100DQ60 Gate Voltage 10% TJ = 125C td(on) IC V CC V CE tr Collector Current 90% 5% A 10% Collector Voltage Switching Energy D.U.T. Figure 21, Inductive Switching Test Circuit 5% Figure 22, Turn-on Switching Waveforms and Definitions VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage A TJ = 125C V CE Collector Voltage td(off) 100uH IC V CLAMP 90% B tf 10% 0 Switching Energy Collector Current 050-7611 Rev A 3-2005 Figure 23, Turn-off Switching Waveforms and Definitions A DRIVER* Figure 24, EON1 Test Circuit D.U.T. TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol APT200GN60JDQ4 Characteristic / Test Conditions IF(AV) IF(RMS) IFSM All Ratings: TC = 25C unless otherwise specified. Maximum Average Forward Current (TC = 108C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 156 Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) UNIT Amps 1000 STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions MIN Forward Voltage TYP MAX IF = 100A 1.6 2.2 IF = 200A 2.05 IF = 100A, TJ = 125C 1.28 UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A, diF/dt = -200A/s VR = 400V, TC = 125C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25C Maximum Reverse Recovery Current trr IRRM IF = 100A, diF/dt = -200A/s IF = 100A, diF/dt = -1000A/s VR = 400V, TC = 125C Maximum Reverse Recovery Current MIN TYP MAX - 34 - 160 - 290 - 5 - 220 ns - 1530 nC - 13 - 100 ns - 2890 nC - 44 Amps UNIT ns nC - - Amps Amps 0.30 0.9 0.25 0.7 0.20 0.5 Note: 0.15 0.3 0.10 t1 t2 0.05 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC 0.1 SINGLE PULSE 0.05 10 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION -3 RC MODEL Junction temp (C) Power (watts) 3-2005 10 -4 0.0673 C/W 0.0182 J/C 0.188 C/W 0.361 J/C Rev A 10 -5 0.0743 C/W 5.17 J/C 050-7611 0 PDM ZJC, THERMAL IMPEDANCE (C/W) 0.35 Case temperature (C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL 300 trr, REVERSE RECOVERY TIME (ns) TJ = 25C 250 IF, FORWARD CURRENT (A) APT200GN60JDQ4 300 200 TJ = 175C 150 TJ = 125C 100 50 T =125C J V =400V R 250 200A 200 100A 50A 150 100 50 TJ = -55C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change 60 T =125C J V =400V 3500 R 200A 3000 100A 2500 2000 50A 1500 1000 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 0.8 Qrr CJ, JUNCTION CAPACITANCE (pF) 3-2005 Rev A Duty cycle = 0.5 T =175C J 100 80 60 40 20 0 1400 050-7611 10 120 25 50 75 100 125150 25 50 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 1200 1000 800 600 400 200 0 50A 20 140 0.2 0.0 100A 30 160 IRRM 0.6 0.4 200A 40 180 trr trr R 50 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change Qrr 1.0 T =125C J V =400V 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 4000 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 Vr diF /dt Adjust +18V 0V D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 33. Diode Test Circui t 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 34, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Emitter/Anode 30.1 (1.185) 30.3 (1.193) Collector/Cathode * Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. 38.0 (1.496) 38.2 (1.504) * Emitter/Anode Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3-2005 3.3 (.129) 3.6 (.143) Rev A r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7611 7.8 (.307) 8.2 (.322)