1
Subject to change without notice.
www.cree.com/wireless
CGH40045
45 W, RF Power GaN HEMT
Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40045, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF
and microwave applications. GaN HEMTs offer high efciency, high
gain and wide bandwidth capabilities making the CGH40045 ideal
for linear and compressed amplier circuits. The transistor is
available in a ange and pill package.
Rev 3.4 – April 2012
FEATURES
• Up to 4 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 12 dB Small Signal Gain at 4.0 GHz
• 55 W Typical PSAT
• 55 % Efciency at PSAT
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Ampliers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear ampliers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Package Types: 440193 & 440206
PN’s: CGH40045F & CGH40045P
2CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 84 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 15 mA 25˚C
Maximum Drain Current1IMAX 6 A 25˚C
Soldering Temperature2TS245 ˚C
Screw Torque τ80 in-oz
Thermal Resistance, Junction to Case3RθJC 2.8 ˚C/W 85˚C
Case Operating Temperature3,4 TC-40, +150 ˚C 30 seconds
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
3 Measured for the CGH40045F at PDISS = 56W.
4 See also, the Power Dissipation De-rating Curve on Page 8.
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -3.5 -3.0 -2.0 VDC VDS = 10 V, ID = 14.4 mA
Gate Quiescent Voltage VGS(Q) – -3.0 – VDC VDS = 28 V, ID = 400 mA
Saturated Drain Current2IDS 11.6 14.0 – A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 14.4 mA
RF Characteristics3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Small Signal Gain GSS 12.5 14 – dB VDD = 28 V, IDQ = 400 mA
Power Output4PSAT 40 55 – W VDD = 28 V, IDQ = 400 mA
Drain Efciency5η45 55 – % VDD = 28 V, IDQ = 400 mA, POUT = PSAT
Output Mismatch Stress VSWR – – 10 : 1 Y
No damage at all phase angles,
VDD = 28 V, IDQ = 400 mA,
POUT = 45 W CW
Dynamic Characteristics
Input Capacitance CGS – 19.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS – 5.9 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD – 0.8 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGH40045F-TB.
4 PSAT is dened as IG = 1.08 mA.
5 Drain Efciency = POUT / PDC
3CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Performance
Simulated Small Signal Gain and Input Return Loss of
the CGH40045-TB vs Frequency
VDD = 28 V, IDQ = 400 mA
Gain, Efciency, and Output Power vs Frequency of
the CGH40045F measured in Amplier Circuit CGH40045-TB
VDD = 28 V, IDQ = 400 mA
CGH40045 Sparameters
40
50
60
70
80
(W), Gain (dB), Drain Efficiency (%)
Psat
Gain
0
10
20
30
40
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70
P
SAT
(W), Gain (dB), Drain Efficiency (%)
Frequency (GHz)
Gain
Drain Eff
4CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
20
25
30
35
40
45
50
5 10 15 20 25 30 35 40
Input Power (dBm)
Output Power (dBm)
2.5GHz
2.4GHz
2.6GHz
Typical Performance
Gain and Efciency vs Output Power of the
CGH40045 measured in Amplier Circuit CGH40045F-TB
VDD = 28 V, IDQ = 400 mA, Freq = 2.5 GHz
Single Tone CW Output Power vs Input Power of
the CGH40045 measured in Amplier Circuit CGH40045F-TB
VDD = 28 V, IDQ = 400 mA
8
10
12
14
16
18
20
22 24 26 28 30 32 34 36 38 40 42 44 46 48
Output Power (dBm)
Gain (dB)
0%
10%
20%
30%
40%
50%
60%
Drain Efficiency (%)
Gain
Drain Efficiency
5CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Performance
Pulsed Gain and Output Power vs Input Power of
the CGH40045 measured in an Amplier Circuit
VDD = 28 V, IDQ = 800 mA, Freq = 3.6 GHz, Pulse Width=200µS, 10% Duty Cycle
Single Tone CW Gain, Efciency, and Output Power vs Input Power of
the CGH40045 measured in an Amplier Circuit
VDD = 28 V, IDQ = 800 mA, Freq = 3.6 GHz
Gain (dB)
Output Power (dBm)
Input Power (dBm)
POUT
Gain
7
8
9
10
11
12
13
5 10 15 20 25 30 35 40
0
10
20
30
40
50
60
Gain (dB)
Drain Efciency (%)
Output Power (dBm)
Input Power
POUT
Gain
Efciency
7
8
9
10
11
12
13
0 5 10 15 20 25 30 35 40
0
10
20
30
40
50
60
6CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40045
VDD = 28 V, IDQ = 400 mA
MAG (dB)
K Factor
7CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40045
VDD = 28 V, IDQ = 400 mA
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C
Minimum Noise Figure (dB)
Noise Resistance (Ohms)
8CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Simulated Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 4.1 + j5.27 14.73 + j6.91
750 2.9 + j 4.1 12.3 + j 7.6
1000 2.48 + j0.06 8.13 + j6.85
1100 1.9 + j 3.1 9.2 + j 6.2
1500 2.1 - j 2.5 6.0 + j 4.3
1800 2.1 - j 1.9 5.8 + j 4.1
2000 0.69 - j3.75 4.93 + j0.16
2100 1.5 - j 4.4 5.1 + j 2.8
3000 1.06 - j8.92 4.04 - j2.98
4000 1.67 - j18.1 4.97 - j8.25
Note 1. VDD = 28V, IDQ = 800mA in the 440193 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors
should be used to maintain amplier stability.
CGH40045 Power Dissipation De-rating Curve
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
D
Z Source Z Load
G
S
40
50
60
CGH40045F CW Power Dissipation De-rating Curve
0
10
20
30
0 25 50 75 100 125 150 175 200 225 250
Maximum Case Temperature (°C)
Note 1
9CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH40045-TB Demonstration Amplier Circuit Schematic
CGH40045-TB Demonstration Amplier Circuit Outline
Note: The device slot is machined to different depths to support either pill or anged versions
10 CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH40045-TB Demonstration Amplier Circuit Bill of Materials
Designator Description Qty
C1 CAP, 0.8pF, ± 0.1 pF, 0603 1
C2 CAP, 2.2pF, ± 0.1 pF, 0603 1
C4,C11,C17 CAP, 10.0pF, +/-5%, 0603, ATC 3
C6,C13, C19 CAP, 470pF ±5 %, 100 V, 0603, X7R 3
C7,C14,C20 CAP,33000PF, 0805,100V, X7R 3
C8 CAP, 10UF, 16V, SMT, TANTALUM 1
C10 CAP, 8.2pF ±5%, ATC100B 1
C15,C21 CAP, 1.0UF ±10%, 100V, 1210, X7R 2
C5,C12,C18,C30,C31 CAP, 82.0pF, ±5%, 0603 5
C16,C22 CAP, 33UF, 20%, G CASE 2
R2 RES, 1/16W, 0603, 100 Ohms 1% 1
R1 RES, 1/16W, 0603, 5.1 Ohms 1% 1
J2,J3 CONN, SMA, PANEL MOUNT JACK, FLANGE 2
J1 CONN, HEADER, RT>PLZ .1CEN LK 9POS 1
- PCB, RO4350B, Er = 3.48, h = 20 mil 1
Q1 CGH40045 1
CGH40045-TB Demonstration Amplier Circuit
11 CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Package S-Parameters for CGH40045
(Small Signal, VDS = 28 V, IDQ = 400 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.941 -171.75 7.34 80.91 0.012 -3.58 0.650 -173.39
600 MHz 0.941 -174.07 6.12 77.22 0.012 -6.14 0.655 -173.73
700 MHz 0.941 -175.88 5.24 73.81 0.012 -8.41 0.660 -173.93
800 MHz 0.942 -177.39 4.59 70.58 0.012 -10.49 0.665 -174.05
900 MHz 0.942 -178.70 4.07 67.49 0.012 -12.42 0.671 -174.15
1.0 GHz 0.942 -179.88 3.66 64.51 0.011 -14.23 0.677 -174.24
1.1 GHz 0.943 179.05 3.33 61.61 0.011 -15.93 0.683 -174.35
1.2 GHz 0.943 178.03 3.05 58.78 0.011 -17.54 0.689 -174.49
1.3 GHz 0.944 177.07 2.82 56.03 0.011 -19.06 0.695 -174.66
1.4 GHz 0.944 176.13 2.62 53.33 0.011 -20.50 0.701 -174.86
1.5 GHz 0.945 175.21 2.45 50.69 0.011 -21.86 0.707 -175.10
1.6 GHz 0.945 174.30 2.30 48.10 0.011 -23.14 0.713 -175.37
1.7 GHz 0.945 173.40 2.17 45.56 0.011 -24.34 0.718 -175.68
1.8 GHz 0.946 172.49 2.06 43.05 0.010 -25.47 0.724 -176.02
1.9 GHz 0.946 171.58 1.96 40.59 0.010 -26.53 0.729 -176.40
2.0 GHz 0.946 170.65 1.87 38.16 0.010 -27.51 0.734 -176.81
2.1 GHz 0.946 169.70 1.80 35.76 0.010 -28.43 0.739 -177.25
2.2 GHz 0.946 168.73 1.73 33.39 0.010 -29.28 0.743 -177.72
2.3 GHz 0.946 167.73 1.67 31.03 0.010 -30.06 0.747 -178.21
2.4 GHz 0.945 166.70 1.62 28.70 0.010 -30.78 0.751 -178.74
2.5 GHz 0.945 165.63 1.57 26.37 0.010 -31.44 0.754 -179.28
2.6 GHz 0.945 164.53 1.54 24.06 0.010 -32.05 0.757 -179.85
2.7 GHz 0.944 163.38 1.50 21.74 0.009 -32.60 0.759 179.55
2.8 GHz 0.943 162.17 1.47 19.42 0.009 -33.10 0.761 178.93
2.9 GHz 0.942 160.91 1.45 17.09 0.009 -33.56 0.763 178.28
3.0 GHz 0.941 159.57 1.43 14.74 0.009 -33.99 0.764 177.61
3.2 GHz 0.938 156.68 1.41 9.95 0.009 -34.75 0.766 176.20
3.4 GHz 0.935 153.41 1.41 5.00 0.009 -35.46 0.765 174.68
3.6 GHz 0.930 149.66 1.42 -0.20 0.010 -36.21 0.763 173.05
3.8 GHz 0.923 145.28 1.46 -5.76 0.010 -37.13 0.758 171.27
4.0 GHz 0.914 140.09 1.52 -11.80 0.011 -38.39 0.751 169.35
4.2 GHz 0.903 133.82 1.60 -18.50 0.011 -40.21 0.742 167.23
4.4 GHz 0.888 126.08 1.71 -26.07 0.012 -42.86 0.729 164.90
4.6 GHz 0.868 116.32 1.86 -34.83 0.013 -46.72 0.712 162.27
4.8 GHz 0.842 103.74 2.05 -45.14 0.015 -52.24 0.690 159.29
5.0 GHz 0.811 87.25 2.27 -57.50 0.017 -59.93 0.663 155.80
5.2 GHz 0.777 65.61 2.51 -72.38 0.019 -70.34 0.628 151.60
5.4 GHz 0.752 38.13 2.72 -90.03 0.021 -83.73 0.581 146.39
5.6 GHz 0.753 6.31 2.83 -110.07 0.023 -99.76 0.516 139.81
5.8 GHz 0.785 -25.54 2.78 -131.39 0.023 -117.31 0.427 131.59
6.0 GHz 0.835 -53.19 2.58 -152.64 0.022 -135.03 0.311 121.26
Download this s-parameter le in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp
12 CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Package S-Parameters for CGH40045
(Small Signal, VDS = 28 V, IDQ = 800 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.952 -172.90 7.23 81.83 0.009 -1.13 0.688 -176.19
600 MHz 0.952 -175.11 6.03 78.47 0.009 -3.05 0.691 -176.58
700 MHz 0.952 -176.85 5.18 75.35 0.009 -4.72 0.694 -176.86
800 MHz 0.952 -178.32 4.54 72.38 0.009 -6.21 0.696 -177.07
900 MHz 0.952 -179.59 4.05 69.53 0.009 -7.58 0.699 -177.25
1.0 GHz 0.952 179.25 3.65 66.76 0.009 -8.84 0.702 -177.42
1.1 GHz 0.952 178.19 3.33 64.06 0.009 -10.01 0.706 -177.59
1.2 GHz 0.952 177.18 3.06 61.42 0.009 -11.09 0.709 -177.77
1.3 GHz 0.952 176.22 2.83 58.82 0.009 -12.11 0.712 -177.96
1.4 GHz 0.952 175.28 2.64 56.27 0.009 -13.05 0.716 -178.17
1.5 GHz 0.952 174.37 2.48 53.75 0.009 -13.92 0.719 -178.41
1.6 GHz 0.952 173.46 2.34 51.27 0.009 -14.72 0.722 -178.67
1.7 GHz 0.952 172.55 2.21 48.82 0.009 -15.46 0.725 -178.95
1.8 GHz 0.952 171.64 2.11 46.39 0.009 -16.14 0.728 -179.26
1.9 GHz 0.952 170.72 2.01 43.99 0.009 -16.75 0.731 -179.59
2.0 GHz 0.951 169.78 1.93 41.60 0.009 -17.29 0.734 -179.94
2.1 GHz 0.951 168.83 1.86 39.23 0.009 -17.78 0.737 179.67
2.2 GHz 0.951 167.85 1.80 36.88 0.008 -18.21 0.739 179.27
2.3 GHz 0.950 166.84 1.74 34.53 0.008 -18.58 0.741 178.83
2.4 GHz 0.949 165.80 1.69 32.19 0.008 -18.90 0.743 178.38
2.5 GHz 0.949 164.73 1.65 29.85 0.008 -19.17 0.744 177.90
2.6 GHz 0.948 163.61 1.61 27.51 0.008 -19.40 0.746 177.39
2.7 GHz 0.947 162.44 1.58 25.15 0.008 -19.59 0.747 176.86
2.8 GHz 0.946 161.22 1.56 22.79 0.008 -19.74 0.747 176.31
2.9 GHz 0.945 159.94 1.54 20.40 0.009 -19.87 0.748 175.73
3.0 GHz 0.943 158.58 1.53 17.98 0.009 -19.99 0.747 175.12
3.2 GHz 0.940 155.64 1.51 13.04 0.009 -20.21 0.746 173.83
3.4 GHz 0.935 152.30 1.51 7.90 0.009 -20.51 0.743 172.44
3.6 GHz 0.930 148.47 1.54 2.47 0.010 -21.01 0.738 170.92
3.8 GHz 0.922 143.99 1.58 -3.34 0.010 -21.86 0.730 169.27
4.0 GHz 0.913 138.66 1.65 -9.68 0.011 -23.25 0.721 167.47
4.2 GHz 0.900 132.21 1.75 -16.72 0.012 -25.41 0.708 165.49
4.4 GHz 0.884 124.23 1.87 -24.68 0.013 -28.63 0.691 163.32
4.6 GHz 0.863 114.16 2.04 -33.86 0.015 -33.25 0.671 160.90
4.8 GHz 0.835 101.18 2.24 -44.66 0.017 -39.70 0.646 158.17
5.0 GHz 0.802 84.20 2.47 -57.54 0.020 -48.45 0.616 155.00
5.2 GHz 0.768 62.03 2.72 -72.91 0.022 -59.96 0.577 151.18
5.4 GHz 0.745 34.19 2.91 -90.96 0.025 -74.38 0.527 146.39
5.6 GHz 0.750 2.50 2.99 -111.20 0.026 -91.25 0.459 140.32
5.8 GHz 0.785 -28.66 2.91 -132.50 0.027 -109.41 0.366 132.93
6.0 GHz 0.837 -55.46 2.67 -153.57 0.025 -127.56 0.245 124.60
Download this s-parameter le in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp
13 CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Product Dimensions CGH40045F (Package Type — 440193)
Product Dimensions CGH40045P (Package Type — 440206)
14 CGH40045 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are
provided for information purposes only. These values can and do vary in different applications and actual performance
can vary over time. All operating parameters should be validated by customer’s technical experts for each application.
Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
919.407.5302
Ryan Baker
Marketing
Cree, RF Components
919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
919.407.5639