1. Product profile
1.1 General description
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead
flange package (SOT502A) with a ceramic cap. The common source is connected to the
flange.
1.2 Features
T yp ical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply volt age
of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %:
Output power = 250 W
Power gain = 13 dB
Efficiency = 47 %
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range
BLL1214-250R
LDMOS L-band radar power transistor
Rev. 01 — 4 February 2010 Product data sheet
Table 1. Test information
Typical RF performance at Th=25
°
C; tp = 1 ms;
δ
= 10 %; in a common source class-AB test
circuit.
Mode of operation f VDS IDq PLGpηDPdroop(pulse) trtf
(GHz) (V) (mA) (W) (dB) (%) (dB) (ns) (ns)
pulsed RF 1.2 to 1.4 36 150 250 13 47 0.2 15 5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLL1214-250R_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 2 of 12
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain
2gate
3source [1] 3
2
1
sym11
2
1
3
2
Table 3. Ordering i nformation
Type number Package
Name Description Version
BLL1214-250R - flanged LDMOST ceramic package; 2 mounting ho les;
2 leads SOT502A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 75 V
VGS gate-source voltage −22 +22 V
Ptot total power dissipation Th≤70 °C; tp=1ms; δ=10% - 400 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-h) transient thermal impedance from
junction to heatsink Th=25°C
tp = 100 μs; δ= 10 % 0.17 K/W
tp = 1 ms; δ= 10 % 0.32 K/W
BLL1214-250R_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 3 of 12
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
6. Characteristics
6.1 Ruggedness in class-AB operation
The BLL1214-250R is capable of withstanding a load mismatch cor responding to
VSWR = 3 : 1 through all phases under the following conditions: VDS =36V;
f = 1.2 GHz to 1.4 GHz at rated load power.
7. Application information
7.1 Impedance information
Table 6. DC characteristics
Tj = 25
°
C.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D=3mA 75 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID=300mA 4 - 5 V
IDSS drain leakage current VGS =0V; V
DS =36V--1μA
IDSX drain cut-off current VGS =V
GS(th) +9V;
VDS =10V 45 - - A
IGSS gate leakage current VGS =±20 V ; V DS =0V--1μA
gfs forward transconductance VDS =10V; I
D=10A - 9 - S
RDS(on) drain-source on-state resistance VGS =9 V; I
D=10A - 60 - mΩ
Table 7. RF characteristics
Mode of operation: pulsed RF; tp = 1 ms;
δ
= 10 %; f = 1.2 GHz to 1.4 GHz; RF performance at
VDS =36V; I
Dq = 150 mA; Th=25
°
C; Zth(mb-h) = 0.25 K/W; unless otherwise specified, in a common
source class-AB circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power - 250 - W
VDS drain-source voltage PL=250W - 36 - V
Gppower gain PL=250W - 13 - dB
ηDdrain efficiency PL=250W - 47 - %
Pdroop(pulse) pulse droop power PL= 250 W - 0.2 - dB
trrise time PL=250W - 15 - ns
tffall time PL=250W - 5 - ns
Table 8. Typical impedance
Typical values unless otherwise specified .
f ZSZL
GHz Ω Ω
1.20 1.3 − j2.8 1.1 − j0.9
1.25 1.9 − j2.8 1.0 − j0.5
1.30 4.6 − j2.9 0.8 − j0.2
1.35 5.7 − j0.3 0.7 − j0.3
1.40 2.7 − j1.8 0.6 − j0.4
BLL1214-250R_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 4 of 12
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
7.2 Application circuit
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 200B or capacitor of same quality.
Fig 1. Definition of transis tor imp e da nc e
001aaf05
9
drain
ZL
ZS
gate
Table 9. List of components
See Figure 2.
The components are situated in one side of the copper-clad Rodgers Duroid 6010 Printed-Circuit
Board (PCB);
ε
r = 10.2 F/m; thickness = 0.64 mm. The other side is unetched and serves as a
ground plane.
Component Description Value Remarks
C1, C3 multilayer ceramic chip capacitor 39 pF [1]
C2, C4 multilayer ceramic chip capacitor 47 pF [1]
C5, C6 multilayer ceramic chip capacitor 20 nF [2]
C7 multilayer ceramic chip capacitor 36 pF [2]
C8 electrolytic capacitor 100 μF ; 10 0 V
BLL1214-250R_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 5 of 12
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
See Table 9 for list of components.
Dimensions in mm.
The components are situated in one side of the copper-clad Rodgers Duroid 6010 Printed-Circuit
Board (PCB); εr = 10.2 F/m; thickness = 0.64 mm. The other side is unetched and serves as a
ground plane.
Fig 2. Component layout
40 40
60
C1
mld866
C2
C7
C8
C3
C5
C4
C6
BLL1214-250R_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 6 of 12
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
8. Test information
8.1 RF performance
tp = 1 ms; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 100 μs; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
Fig 3. Output power as a function of input power;
typical valu e s Fig 4. Output power as a function of input power;
typical values
tp = 1 ms; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 100 μs; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
Fig 5. Power gain as a function of load power;
typical values Fig 6. Power gain as a function of load power;
typical values
mld858
048 Pi (W)
PL
(W)
16
300
0
100
200
12
(1)
(3)
(2)
mld859
048 Pi (W)
PL
(W)
16
300
0
100
200
12
(1)
(3)
(2)
mld860
0 100
PL (W)
Gp
(dB)
300
16
12
4
0
8
200
(3)
(1)
(2)
mld861
0 100
PL (W)
Gp
(dB)
300
16
12
4
0
8
200
(3)
(1)
(2)
BLL1214-250R_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 7 of 12
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
tp = 1 ms; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 100 μs; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
Fig 7. Drain efficiency as a func tion of load power;
typical values Fig 8. Drain efficiency as a function of load power;
typical values
tp = 1 ms; δ = 10 %. tp = 100 μs; δ = 10 %.
Fig 9. Power gain and drain efficiency as function of
frequency; typical values Fig 10. Powe r gain an d drain efficiency as function of
frequency; typical values
mld862
0
ηD
(%)
PL (W)
60
40
20
0
100 300200
(1)
(2)
(3)
mld863
0
ηD
(%)
PL (W)
60
40
20
0
100 300200
(1)
(2)
(3)
mld864
1.15 1.25 f (GHz)
Gp
(dB)
1.35 1.45
15
10
14
13
12
11
ηD
(%)
60
10
50
40
30
20
Gp
ηD
mld865
1.15 1.25 f (GHz)
Gp
(dB)
1.35 1.45
15
10
14
13
12
11
ηD
(%)
60
10
50
40
30
20
Gp
ηD
BLL1214-250R_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 8 of 12
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
9. Package outline
Fig 11. Package outline SOT502A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502
A
p
L
A
F
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57
0.15
0.08
20.02
19.61
9.53
9.25
19.94
18.92
9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495
0.006
0.003
0.788
0.772
D1
19.96
19.66
0.786
0.774
0.375
0.364
0.785
0.745
0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035
1.345
1.335
0.210
0.170
0.133
0.123
0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
BLL1214-250R_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 9 of 12
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
DC Direct Current
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor T ransistor
RF Radio Frequency
L-band Long wave band
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLL1214-250R_1 20100204 Product data sheet - -
BLL1214-250R_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 10 of 12
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full informatio n see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyon d those described in the
Product data sheet.
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Limited warr a nty and liability — Information in this document is believed to
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representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
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In no event shall NXP Semiconductors be liable for any indirect, incidental,
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profits, lost savings, business interruption, costs related to the removal or
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Notwithstanding any damages that customer might incur for any reason
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customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, milit ary, aircraft,
space or life support equipment, nor in app lications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application /use or t he application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
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suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and t he
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by cust omer.
No offer to sell or license — Nothing i n this document may be interpreted or
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conveyance or implication of any license under any copyrights, patents or
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Export control — This document as well as the item(s) described herein
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Semiconductors product expressly states that the product is automotive
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NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualifie d products in automotive equipment or applicatio ns.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and st andards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product developm ent.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BLL1214-250R_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 11 of 12
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
product for such au tomotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive appl ications beyond NXP Semiconductors’
standard warrant y and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLL1214-250R
LDMOS L-band radar power transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 February 2010
Document identifier: B LL1 214 - 250 R_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Impedance information. . . . . . . . . . . . . . . . . . . 3
7.2 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
