TECHNICAL DATA SHEET
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Website: http://www.microsemi.com
T4-LDS-0200 Rev. 1 (110597) Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
hFE
IC = 0.1mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
IC = 500mAdc, VCE = 10Vdc
20
35
40
20
120
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc 1.5
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc
1.3
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Small-Signal Forward Current Transfer Ratio
|hfe|
IC = 50mAdc, VCE = 10Vdc, f = 20MHz 3.0
Small-Signal Forward Current Transfer Ratio
hfe
IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
30
35
100
150
Small-Signal Short Circuit Input Impedance
IC = 5.0mAdc, VCB = 10Vdc, f = 1.0kHz hib 4.0 8.0
Ω
Small-Signal Short Circuit Output Admittance
IC = 5.0mAdc, VCB = 10Vdc, f = 1.0kHz hob 1.0
ηΩ
Output Capacitance
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Cobo 25
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time & Turn-Off Time
(See Figure 5 of MIL-PRF-19500/181) ton + toff 30 ηs
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%