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1998©
Document No. D15597EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4551
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4551 is a power transistor developed for high-speed
switching and features low VCE(sat) and high hFE. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = 2 V, IC = 2 A)
VCE(sat) ≤ 0.3 V (IC = 6 A, IB = 0.3 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 60 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 10 A
Collector current (pulse) IC(pulse)*20A
Base current (DC) IB(DC) 5.0 A
Total power dissipation PT (Tc = 25°C) 30 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 300
µ
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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Data Sheet D15597EJ2V0DS
2
2SC4551
ELECTRICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector to emitter voltage VCEO(SUS) IC = 6.0 A, IB = 0.6 A, L = 1 mH 60 V
Collector to emitter voltage VCEX(SUS) IC = 6.0 A, IB1 = −IB2 = 0.6 A,
VBE(OFF) = −1.5 V, L = 180
µ
H, clamped
60 V
Collector cutoff current ICBO VCB = 60 V, IE = 0 10
µ
A
Collector cutoff current ICER VCE = 60 V, RBE = 50 Ω, Ta = 125°C1.0 mA
Collector cutoff current ICEX1 VCE = 60 V, VBE(OFF) = −1.5 V 10
µ
A
Collector cutoff current ICEX2 VCE = 60 V, VBE(OFF) = −1.5 V,
Ta = 125°C
1.0 mA
Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 10
µ
A
DC current gain hFE1*V
CE = 2.0 V, IC = 1.0 A 100
DC current gain hFE2*V
CE = 2.0 V, IC = 2.0 A 100 200 400
DC current gain hFE3*V
CE = 2.0 V, IC = 6.0 A 60
Collector saturation voltage VCE(sat)1*I
C = 6.0 A, IB = 0.3 A 0.3 V
Collector saturation voltage VCE(sat)2*I
C = 8.0 A, IB = 0.4 A 0.5 V
Base saturation voltage VBE(sat)1*I
C = 6.0 A, IB = 0.3 A 1.2 V
Base saturation voltage VBE(sat)2*I
C = 8.0 A, IB = 0.4 A 1.5 V
Collector capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 150 pF
Gain bandwidth product fTVCE = 10 V, IC = 1.0 A 140 MHz
Turn-on time ton 0.3
µ
s
Storage time tstg 1.5
µ
s
Fall time tf
IC = 6.0 A, RL = 8.3 Ω,
IB1 = −IB2 = 0.3 A, VCC ≅ 50 V
Refer to the test circuit.
0.3
µ
s
* Pulse test PW ≤ 350
µ
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K
hFE2 100 to 200 150 to 300 200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D15597EJ2V0DS 3
2SC4551
TYPICAL CHARACTERISTICS (Ta = 25°
°°
°C)
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Data Sheet D15597EJ2V0DS
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2SC4551
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Data Sheet D15597EJ2V0DS 5
2SC4551
[MEMO]
2SC4551
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
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No part of this document may be copied or reproduced in any form or by any means without prior
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NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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semiconductor products, customers must incorporate sufficient safety measures in their design, such as
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NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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