DSA240X200NA
Low Loss and Soft Recovery
High Performance Schottky Diode
Parallel legs
Schottky Diode
2
3
1
4
Part number
DSA240X200NA
Backside: isolated
FAV
F
V V0.87
RRM
120
200
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20160623bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSA240X200NA
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.00
R0.4 K/W
R
min.
120
V
RSM
V
1.5T = 25°C
VJ
T = °C
VJ
mA15V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
95
P
tot
310 WT = 25°C
C
RK/W
120
200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.26
T = 25°C
VJ
125
V
F0
V
0.54T = °C
VJ
150
r
F
2.5
mΩ
V
0.87T = °C
VJ
I = A
F
V
120
1.17
I = A
F
240
I = A
F
240
threshold voltage
slope resistance for power loss calculation only
mA
125
V
RRM
V
200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
902
junction capacitance
V = V24 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
150
1.60 kA
200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
200
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20160623bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSA240X200NA
Ratings
abcdZyyww
XXXXX
Product Marking
Logo
Part No.
DateCode
Assembly Code
Assembly Line
®
D
S
A
240
X
200
NA
Part description
Diode
Schottky Diode
low VF
Parallel legs
SOT-227B (minibloc)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.5
mounting torque
1.1
T
VJ
°C150
virtual junction temperature
-40
Weight g30
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm1.5
terminal torque
1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
150 A
per terminal
125-40
terminal to terminal
SOT-227B (minibloc)
Similar Part Package Voltage class
DSS2x101-02A SOT-227B (minibloc) 200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSA240X200NA 511108Tube 10DSA240X200NAStandard
3000
ISOL
T
stg
°C150
storage temperature
-40
2500
threshold voltage
V0.54
mΩ
V
0 max
R
0 max
slope resistance *
0.6
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Schottky
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20160623bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSA240X200NA
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20160623bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSA240X200NA
0 50 100 150
0
40
80
120
0.4 0.8 1.2
0
40
80
120
160
200
2
4
0
0 50 100 150
0.001
0.01
0.1
1
1
0
I
F
[
A]
V
F
[V]
I
R
[mA]
V
R
[V]
I
F(AV)
[A]
P
(AV)
[W]
Z
thJC
[K/W]
t [ms]
Fig. 1 Max. forward voltage drop characteristics Fig. 2 Typ. reverse current I
R
versus reverse
voltage V
R
Fig. 4 Forward power loss characteristics
Fig. 6 Transient thermal impedance
junction to case
T
VJ
=
25°C
125°C
150°C
100°C
50°C
25°C
T
VJ
=150°C
125°C
75°C
0 40 80 120 160
0
20
40
60
80
100
120
140
160
180
T
C
[°C]
Fig. 5 Average forward current I
F(AV)
versus
case temperature T
C
I
F
[
A]
DC
d = 0.5
0 40 80 120 160 200
1000
2000
3000
4000
5000
V
R
[V]
C
T
[
pF]
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
T
VJ
= 25°C
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
DC
0.5
0.33
0.25
0.17
0.08
R
thi
[K/W]
0.06908
0.09397
0.1128
0.1241
t
i
[s]
0.00128
0.01279
0.02201
0.4439
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20160623bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
