AT49F001(N)(T)
3
Device Operation
READ: The AT49F001(N)(T) is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the
high impedance state whenever CE or OE is high. This
dual-line control gives designers flexibility in preventing bus
contention.
COMMAND SEQUENC ES: When the device is first pow-
ered on it will be reset to the read or standby mode
depending upon the state of the control line inputs. In order
to perform other device functions, a series of command
sequences are entered into the device. The command
sequences are shown in the Command Definitions table.
The command sequences are written by applying a low
pulse on th e WE or CE i nput with CE or WE low (respec-
tively) and OE high. The address is latched on the falling
edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Standard
microprocess or write timings are used. The address loca-
tions used in the command sequences are not affected by
entering the command sequences.
RESET: A RESET input pin is provided to ease some sys-
tem appl icati ons. When RE SET is at a logic high level, the
device is in i ts sta nda rd operating mod e. A low l evel on th e
RESET input halts the prese nt device op eration and puts
the outputs of the device in a high impedence state. If the
RESET pin makes a high-to-low tr ansition during a pro-
gram or eras e o perati on, the operation may n ot b e s uc ess-
fully completed and the operation will have to be repeated
after a hig h level is ap pli ed to the RE SE T pi n. W hen a hig h
leve l is reasser ted on th e RES ET pin , the device r eturns t o
the read o r stan dby mo de, d epe ndi ng u pon t he s tate of th e
control input s. By apply ing a 12V ± 0.5V in put signa l t o the
RESET pin, the boot block array can be reprogrammed
even if the boot block lockout feature has been enabled
(see Boot Bl ock Pr ogrammi ng Loc kout Ov erride s ection ).
The RESET feature is not available for the AT49F001N(T).
ERASURE: Befor e a byte can b e reprogr amme d, the mai n
memory block or parameter block which contains the byte
must be erased . The erased state of th e memory bits is a
logical “1”. Th e entire device can be erased at on e time by
using a 6-byte software code. The software chip erase
code consists of 6-byte load commands to specific address
locations with a specific data pattern (please refer to the
Chip Erase Cycle Waveforms).
After th e so ftwar e c hi p e rase h as b een i niti ate d, the d evi c e
will internal ly time the erase opera tion so that no external
clocks are required. The maximum time needed to erase
the whole chip is tEC. If the boot bl ock lockout feature has
been enabled, the data in the boot sector will not be
erased.
CHIP E RAS E: If the boot block lockout has been enabled,
the Chip Erase function will erase Parameter Block 1,
Parame ter Bloc k 2, M ain Me mory B lock 1, a nd Mai n Mem-
ory Block 2 but not the boot block. If the Boot Block Lockout
has not been enabled, the Chip Erase function will erase
the entire chip. After the full chip erase the device will
return ba ck to re ad mo de. A ny c omm and dur ing chip er ase
will be ignored.
SECTOR ERASE: As an alternative to a full chip erase, the
device is organized into sectors that can be individually
erased. There are two 8K-byte parameter block sections
and two main memory blocks. The 8K-byte parameter
block sections can be independently erased and repro-
grammed. The two main memory sections are designed to
be used as alternative memory sectors. T hat is, whenever
one of the blocks h as bee n er as ed and repr og rammed, the
other bl ock should be erased and rep rogrammed be fore
the fir st bloc k i s ag ain e ra sed. T he Se ct or E ra se c om man d
is a six bus cycle operation. The sector address is latched
on the falling WE edge of the sixth cycle while the 30H data
input command is latched at the rising edge of WE. The
sector erase starts after the rising edge of WE of the sixth
cycle. The erase operation is internally controlled; it will
automatically time to completion.
BYTE PROGRAMMING: Once the memory array is
erased, the device is programmed (to a logical “0”) on a
byte- by-byte basis . Please not e that a data “0” cannot be
progra mmed ba ck to a “1”; only erase operations can con-
vert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle
operation (please refer to the Command Definitions table).
The devi ce wil l au toma tic al ly gen er ate th e re quir ed in ter na l
program pulses.
The program cycle ha s addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE , whichever occurs
first. Programming is completed after the specified tBP cycle
time. The DA TA polling fe ature may als o be used to ind i-
cate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: Th e dev ice
has one designated block that has a pr ogramming lockout
feature. This feature prev ents programm ing of data in th e
designated block once the feature has been enabled. The
size of the block is 16K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the sys tem. En ablin g the l ockou t feature w ill al low the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boo t blo ck ’s u sag e as a wr i te protected reg io n is
optional to the user. The address range of the boot block is
00000 to 03FFF for the AT49F001(N) while the address