1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)
plastic packages.
1.2 Features
1.3 Applications
1.4 Quick reference data
PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 01 — 31 March 2006 Product data sheet
Table 1. Product overview
Type number Package PNP/PNP
complement NPN/NPN
complement
Philips JEITA
PEMD30 SOT666 - PEMB30 PEMH30
PUMD30 SOT363 SC-88 PUMB30 PUMH30
n100 mA output current capability nReduces component count
nBuilt-in bias resistors nReduces pick and place costs
nSimplifies circuit design
nLow current peripheral driver nCost-saving alternative for BC847BPN
and BC847BVN
nControl of IC inputs nSwitching loads
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - - 50 V
IOoutput current - - 100 mA
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
PEMD30_PUMD30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 31 March 2006 2 of 11
Philips Semiconductors PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning
Pin Description Simplified outline Symbol
1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1
001aab555
6 45
1 32
654
123
TR1 TR2
R1
R1
006aaa269
Table 4. Ordering information
Type number Package
Name Description Version
PEMD30 - plastic surface-mounted package; 6 leads SOT666
PUMD30 SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codes
Type number Marking code[1]
PEMD30 2U
PUMD30 *B3
PEMD30_PUMD30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 31 March 2006 3 of 11
Philips Semiconductors PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V
IOoutput current - 100 mA
ICM peak collector current single pulse;
tp≤1ms - 100 mA
Ptot total power dissipation Tamb ≤25 °C
SOT363 [1] - 200 mW
SOT666 [1][2] - 200 mW
Per device
Ptot total power dissipation Tamb ≤25 °C
SOT363 [1] - 300 mW
SOT666 [1][2] - 300 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from
junction to ambient in free air
SOT363 [1] - - 625 K/W
SOT666 [1][2] - - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient in free air
SOT363 [1] - - 416 K/W
SOT666 [1][2] - - 416 K/W
PEMD30_PUMD30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 31 March 2006 4 of 11
Philips Semiconductors PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
ICBO collector-base cut-off
current VCB =50V; I
E= 0 A - - 100 nA
ICEO collector-emitter cut-off
current VCE =30V; I
B=0A --1µA
VCE =30V; I
B=0A;
Tj= 150 °C--50µA
IEBO emitter-base cut-off
current VEB =5V; I
C= 0 A - - 100 nA
hFE DC current gain VCE =5V; I
C=20mA 30 - -
VCEsat collector-emitter
saturation voltage IC= 10 mA; IB= 0.5 mA - - 150 mV
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
Cccollector capacitance VCB =10V; I
E=i
e=0A;
f=1MHz
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF
PEMD30_PUMD30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 31 March 2006 5 of 11
Philips Semiconductors PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
VCE =5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−40 °C
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
VCE =−5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−40 °C
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−40 °C
Fig 3. TR2 (PNP): DC current gain as a function of
collector current; typical values Fig 4. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
IC (mA)
10−1102
101
006aaa696
200
300
100
400
500
hFE
0
(1)
(2)
(3)
006aaa697
IC (mA)
10−1102
101
10−1
1
VCEsat
(V)
10−2
(3)
(2)
(1)
IC (mA)
−10−1−102
−10−1
006aaa691
200
300
100
400
500
hFE
0
(1)
(2)
(3)
006aaa692
IC (mA)
−10−1−102
−10−1
−10−1
−1
VCEsat
(V)
−10−2
(3)
(2)
(1)
PEMD30_PUMD30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 31 March 2006 6 of 11
Philips Semiconductors PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
[2] T1: normal taping
[3] T2: reverse taping
Fig 5. Package outline SOT363 (SC-88) Fig 6. Package outline SOT666
04-11-08Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
Dimensions in mm 04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 4000 8000 10000
PEMD30 SOT666 2 mm pitch, 8 mm tape and reel - - -315 -
4 mm pitch, 8 mm tape and reel - -115 - -
PUMD30 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165
PEMD30_PUMD30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 31 March 2006 7 of 11
Philips Semiconductors PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
10. Soldering
Dimensions in mm
Fig 7. Reflow soldering footprint SOT363 (SC-88)
Fig 8. Wave soldering footprint SOT363 (SC-88)
MSA432
solder lands
solder resist
occupied area
solder paste
1.20
2.40
0.50
(4×)
0.40
(2×)0.90 2.10
0.50
(4×)
0.60
(2×)
2.35
2.65
solder lands
solder resist
occupied area
1.15
3.75
transport direction during soldering
1.000.30 4.00
4.50
5.25
sot363
Dimensions in mm
PEMD30_PUMD30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 31 March 2006 8 of 11
Philips Semiconductors PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Reflow soldering is the only recommended soldering method.
Fig 9. Reflow soldering footprint SOT666
solder lands
solder resist
placement area
occupied area
0.075 Dimensions in mm
2.75
2.45
2.10
1.60
1.20
2.20
2.50
2.00 1.70 1.00 0.30 (2×)
0.15
(4×)
0.375
(4×)
0.40
(6×)
0.55
(2×)
PEMD30_PUMD30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 31 March 2006 9 of 11
Philips Semiconductors PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
11. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PEMD30_PUMD30_1 20060331 Product data sheet - -
PEMD30_PUMD30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 31 March 2006 10 of 11
Philips Semiconductors PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is for the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Philips Semiconductors PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.
Date of release: 31 March 2006
Document identifier: PEMD30_PUMD30_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 6
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
