RHRG7570, RHRG7580, RHRG7590, RHRG75100 75A, 700V - 1000V Hyperfast Diode March 2001 Features Package * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns * Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC STYLE TO-247 TOP VIEW . +175oC ANODE * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 1000V * Avalanche Energy Rated * Planar Construction CATHODE CATHODE (BOTTOM SIDE METAL) Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Description Symbol K RHRG7570, RHRG7580, RHRG7590 and RHRG75100 (TA49068) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction. A These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. These devices are supplied in the 2 lead JEDEC style TO-247 plastic package. Due to space limitations, the brand on the RHRG75100 is abbreviated to HRG75100. To order this part use the full part number, i.e. RHRG75100. Absolute Maximum Ratings (TC = +25oC), Unless Otherwise Specified RHRG7570 RHRG7580 Peak Repetitive Reverse VoltageVRRM 700 800 900 1000 V Working Peak Reverse VoltageVRWM 700 800 900 1000 V DC Blocking VoltageVR 700 800 900 1000 V Average Rectified Forward CurrentIF(AV) (TC = +52oC) 75 75 75 75 A Repetitive Peak Surge CurrentIFSM (Square Wave, 20kHz) 150 150 150 150 A Nonrepetitive Peak Surge CurrentIFSM (Halfwave, 1 phase, 60Hz) 750 750 750 750 A Maximum Power DissipationPD 190 190 190 190 W Avalanche Energy (L = 40mH) (See Figures 10 and 11)EAVL 50 50 50 50 mj -65 to +175 -65 to +175 -65 to +175 -65 to +175 oC Operating and Storage TemperatureTSTG,TJ (c)2001 Fairchild Semiconductor Corporation RHRG7590 RHRG75100 UNITS RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A Specifications RHRG7570, RHRG7580, RHRG7590, RHRG75100 Electrical Specifications TC = +25oC, Unless Otherwise Specified RHRG7570 SYMBOL VF IR TEST CONDITION RHRG75100 MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX - - 3.0 - - 3.0 - - 3.0 - - 3.0 V IF = 75A, TC = +150oC - - 2.5 - - 2.5 - - 2.5 - - 2.5 V VR = 700V, TC = +25oC - - 50 - - - - - - - - - A VR = 800V, TC = +25oC - - - - - 50 - - - - - - A - - 50 VR = 1000V, TC = +25oC - - - - - - - - - - - 50 A +150oC - - 2.0 - - - - - - - - - mA VR = 800V, TC = +150oC - - - - - 2.0 - - - - - - mA - - 2.0 VR = 1000V, TC = +150oC - - - - - - - - - - - 2.0 mA VR = 700V, TC = VR = 900V, TC = tRR RHRG7590 IF = 75A, TC = +25oC VR = 900V, TC = IR RHRG7580 +25oC +150oC UNITS A mA IF = 1A, dIF/dt = 100A/s - - 85 - - 85 - - 85 - - 85 ns IF = 75A, dIF/dt = 100A/ s - - 100 - - 100 - - 100 - - 100 ns tA IF = 75A, dIF/dt = 100A/ s - 55 - - 55 - - 55 - - 55 - ns tB IF = 75A, dIF/dt = 100A/ s - 40 - - 40 - - 40 - - 40 - ns QRR IF = 75A, dIF/dt = 100A/ s - 240 - - 240 - - 240 - - 240 - nC VR = 10V, IF = 0A - 220 - - 220 - - 220 - pF - - 0.8 - - 0.8 - - 0.8 oC/W CJ RJC 220 0.8 DEFINITIONS VF = Instantaneous Forward Voltage (pw = 300s, D = 2%) IR = Instantaneous Reverse Current tRR = Reverse Recovery Time (Figure 2), Summation of tA + tB tA = Time to Reach Peak Reverse Current (See Figure 2). tB = Time from Peak IRM to Projected Zero Crossing of IRM Based on a Straight Line from Peak IRM Through 25% of IRM (See Figure 2) QRR = Reverse Recovery Charge CJ = Junction Capacitance RJC = Thermal Resistance Junction to Case pw = Pulse Width D = Duty Cycle (c)2001 Fairchild Semiconductor Corporation RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A RHRG7570, RHRG7580, RHRG7590, RHRG75100 V1 AMPLITUDE CONTROLSFI V2 AMPLITUDE CONTROLS dI F/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 +V3 t1 5tA(MAX) t2 > tRR t3 > 0 tA(MIN) L1 R4 10 Q2 Q1 +V1 0 IF LLOOP t2 R2 t1 DUT dIF dt tRR tA tB 0 Q4 0.25 IRM t3 IRM C1 0 R4 VR Q3 -V2 R3 -V4 VRM FIGURE 1. tRR TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation FIGURE 2. tRR WAVEFORMS AND DEFINITIONS RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A RHRG7570, RHRG7580, RHRG7590, RHRG75100 Typical Performance Curves 1000 400 IR , REVERSE CURRENT - (A) IF , FORWARD CURRENT - (A) +175oC 100 +100oC +175oC +25oC 10 +100oC 10 1 0.1 +25oC 0.01 1 0 1 3 2 VF , FORWARD VOLTAGE - (V) 0 5 4 200 400 800 600 1000 VR , REVERSE VOLTAGE - (V) FIGURE 3. TYPICAL FORWARD CURRENT vs. FORWARD VOLTAGE DROP FIGURE 4. TYPICAL REVERSE CURRENT vs. REVERSE VOLTAGE TC = +25oC TC = +100oC 300 100 250 80 t, RECOVERY TIMES - (ns) t, RECOVERY TIMES - (ns) 100 tRR 60 tA 40 tB 20 200 tRR 150 tB 100 tA 50 0 1 0 75 10 1 75 10 IF , FORWARD CURRENT - (A) IF , FORWARD CURRENT - (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs. FORWARD CURRENT AT +25oC FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs. FORWARD CURRENT AT +100oC t, RECOVERY TIMES - (ns) 400 tRR 300 200 tB 100 tA 0 10 1 IF , FORWARD CURRENT - (A) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs. FORWARD CURRENT AT +175oC (c)2001 Fairchild Semiconductor Corporation 75 IF(AV), AVERAGE FORWARD CURRENT - (A) TC = +175oC 500 75 60 DC 45 SQ. WAVE 30 15 0 25 50 75 100 125 150 175 o TC , CASE TEMPERATURE - ( C) FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A RHRG7570, RHRG7580, RHRG7590, RHRG75100 Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 800 700 600 500 400 300 200 100 0 0 50 200 150 100 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs. REVERSE VOLTAGE IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL /(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 130 L R + VDD 1M DUT VAVL Q2 12V 130 CURRENT SENSE IL IL I V VDD 12V FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation t0 t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A RHRG7570, RHRG7580, RHRG7590, RHRG75100 Packaging (Continued) E A OS TERM. 3 TO-247 OP 2 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE (FOR RECTIFIERS ONLY) Q INCHES OR D L1 b1 c L b e1 MIN MAX MIN MAX NOTES A 0.180 0.190 4.58 4.82 2, 3 b 0.046 0.051 1.17 1.29 b1 0.060 0.070 1.53 1.77 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 D 0.800 0.820 20.32 20.82 - E 0.605 0.625 15.37 15.87 e1 2 2 1 J1 1 BACK VIEW MILLIMETERS SYMBOL 0.438 BSC 11.12 BSC 4 J1 0.090 0.105 2.29 2.66 L 0.620 0.640 15.75 16.25 5 - L1 0.145 0.155 3.69 3.93 1 OP 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - OR 0.195 0.205 4.96 5.20 - OS 0.260 0.270 6.61 6.85 - NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 2 dated 12-93. (c)2001 Fairchild Semiconductor Corporation RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H