©2001 Fairchild Semiconductor Corporation RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A
RHRG7570, RHRG7580,
RHRG7590, RHRG75100
75A, 700V - 1000V Hyperfast Diode
Package
JEDEC STYLE TO-247
TOP VIEW
Symbol
(BOTTOM
SIDE METAL)
ANODE
CATHODE
CATHODE
K
A
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . <85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
RHRG7570, RHRG7580, RHRG7590 and RHRG75100
(TA49068) are hyperfast diodes with soft recovery character-
istics (tRR < 85ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and elec-
trical noise in many power switching circuits reducing power
loss in the switching transistors.
These devices are supplied in the 2 lead JEDEC style TO-247
plastic package.
Due to space limitations, the brand on the RHRG75100 is
abbreviated to HRG75100.
To order this part use the full part number, i.e. RHRG75100.
March 2001
Absolute Maximum Ratings (TC = +25oC), Unless Otherwise Specified
RHRG7570 RHRG7580 RHRG7590 RHRG75100 UNITS
Peak Repetitive Reverse VoltageVRRM 700 800 900 1000 V
Working Peak Reverse VoltageVRWM 700 800 900 1000 V
DC Blocking VoltageVR700 800 900 1000 V
Average Rectified Forward CurrentIF(AV)
(TC = +52oC)
75 75 75 75 A
Repetitive Peak Surge CurrentIFSM
(Square Wave, 20kHz)
150 150 150 150 A
Nonrepetitive Peak Surge CurrentIFSM
(Halfwave, 1 phase, 60Hz)
750 750 750 750 A
Maximum Power DissipationPD190 190 190 190 W
Avalanche Energy (L = 40mH) (See Figures 10 and 11)EAVL 50 50 50 50 mj
Operating and Storage TemperatureTSTG,TJ-65 to +175 -65 to +175 -65 to +175 -65 to +175 oC
©2001 Fairchild Semiconductor Corporation RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A
Specifications RHRG7570, RHRG7580, RHRG7590, RHRG75100
Electrical Specifications TC = +25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION
RHRG7570 RHRG7580 RHRG7590 RHRG75100
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
VFIF = 75A, TC = +25oC - -3.0- -3.0- -3.0- -3.0 V
IF = 75A, TC = +150oC - - 2.5 - - 2.5 - - 2.5 - - 2.5 V
IRVR = 700V, TC = +25oC--50---------µA
VR = 800V, TC = +25oC-----50------µA
VR = 900V, TC = +25oC--50µA
VR = 1000V, TC = +25oC-----------50µA
IRVR = 700V, TC = +150oC--2.0---------mA
VR = 800V, TC = +150oC-----2.0------mA
VR = 900V, TC = +150oC--2.0mA
VR = 1000V, TC =
+150oC
-----------2.0mA
tRR IF = 1A, dIF/dt = 100A/µs- -85- -85- -85- -85ns
IF = 75A, dIF/dt = 100A/
µs
- - 100 - - 100 - - 100 - - 100 ns
tAIF = 75A, dIF/dt = 100A/
µs
-55- -55- -55- -55- ns
tBIF = 75A, dIF/dt = 100A/
µs
-40- -40- -40- -40- ns
QRR IF = 75A, dIF/dt = 100A/
µs
- 240 - - 240 - - 240 - - 240 - nC
CJVR = 10V, IF = 0A - 220 - - 220 - 220 - 220 - pF
RθJC - - 0.8 - - 0.8 0.8 - - 0.8 oC/W
DEFINITIONS
VF = Instantaneous Forward Voltage (pw = 300µs, D = 2%)
IR = Instantaneous Reverse Current
tRR = Reverse Recovery Time (Figure 2), Summation of tA + tB
tA = Time to Reach Peak Reverse Current (See Figure 2).
tB = Time from Peak IRM to Projected Zero Crossing of IRM Based on a Straight Line from Peak IRM Through 25% of IRM (See Figure 2)
QRR = Reverse Recovery Charge
CJ = Junction Capacitance
RθJC = Thermal Resistance Junction to Case
pw = Pulse Width
D = Duty Cycle
©2001 Fairchild Semiconductor Corporation RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A
RHRG7570, RHRG7580, RHRG7590, RHRG75100
FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
C1
LLOOP
DUT
Q3
R3
Q4
Q2
R1
R2
-V4
Q1
-V2
0
0
+V1
t1
t2
t3
R4
+V3
V1 AMPLITUDE CONTROLS I
F
V2 AMPLITUDE CONTROLS dI
F/dt
L1 = SELF INDUCTANCE OF
t1 ≥ 5tA(MAX)
t2 > tRR
t3 > 0
L1
R4
tA(MIN)
10
≤
R4 + LLOOP
dt
dIF
IF
tRR
tAtB
0
IRM
0.25 IRM
VR
VRM
©2001 Fairchild Semiconductor Corporation RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A
RHRG7570, RHRG7580, RHRG7590, RHRG75100
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs. FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs. REVERSE
VOLTAGE
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs. FORWARD
CURRENT AT +25oC
FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs. FORWARD
CURRENT AT +100oC
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs. FORWARD
CURRENT AT +175oCFIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
VF, FORWARD VOLTAGE - (V)
IF, FORWARD CURRENT - (A)
1
100
10
0123
+175oC
+100oC
400
45
+25oC
VR, REVERSE VOLTAGE - (V)
0 200 400 600 800
1000
100
0.01
0.1
1
10
IR, REVERSE CURRENT - (µA)
1000
+175oC
+100oC
+25oC
tRR
IF, FORWARD CURRENT - (A)
t, RECOVERY TIMES - (ns)
75
0
100
10
1
tB
80
tA
TC = +25oC
60
40
20
t, RECOVERY TIMES - (ns)
IF, FORWARD CURRENT - (A)
75
10
1
0
50
200
100
150
tRR
tA
tB
TC = +100oC
300
250
TC = +175oC
IF, FORWARD CURRENT - (A)
t, RECOVERY TIMES - (ns)
75
0
500
10
1
400
300
200
100
tRR
tB
tA
75
15
0
25 50 100 150 175
125
30
45
60
TC, CASE TEMPERATURE - (oC)
IF(AV), AVERAGE FORWARD CURRENT - (A)
75
SQ. WAVE
DC
©2001 Fairchild Semiconductor Corporation RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A
RHRG7570, RHRG7580, RHRG7590, RHRG75100
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs. REVERSE VOLTAGE
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
Typical Performance Curves (Continued)
VR, REVERSE VOLTAGE (V)
100
500
0
200
050 100 150 200
400
300
CJ, JUNCTION CAPACITANCE (pF)
600
700
800
12V
Q2
Q1
12V
130Ω
DUT
CURRENT
SENSE
+
LR
1MΩ
VDD
130Ω
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI
2 [V
AVL /(V
AVL - V
DD)]
Q1 AND Q
2 ARE 1000V MOSFETs
-
VDD
IV
t0t1t2
IL
VAVL
t
IL
©2001 Fairchild Semiconductor Corporation RHRG7570, RHRG7580, RHRG7590, RHRG75100 Rev. A
RHRG7570, RHRG7580, RHRG7590, RHRG75100
Packaging (Continued)
A
b
b1
c
D
E
L
L1
ØR
12
e1
21
J1
ØS
Q
ØP
BACK VIEW
TERM. 3 TO-247
2 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
(FOR RECTIFIERS ONLY)
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.180 0.190 4.58 4.82 -
b 0.046 0.051 1.17 1.29 2, 3
b10.060 0.070 1.53 1.77 1, 2
c 0.020 0.026 0.51 0.66 1, 2, 3
D 0.800 0.820 20.32 20.82 -
E 0.605 0.625 15.37 15.87 -
e10.438 BSC 11.12 BSC 4
J10.090 0.105 2.29 2.66 5
L 0.620 0.640 15.75 16.25 -
L10.145 0.155 3.69 3.93 1
ØP 0.138 0.144 3.51 3.65 -
Q 0.210 0.220 5.34 5.58 -
ØR 0.195 0.205 4.96 5.20 -
ØS 0.260 0.270 6.61 6.85 -
NOTES:
1. Lead dimension and finish uncontrolled in L1.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
6. Controlling dimension: Inch.
7. Revision 2 dated 12-93.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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