Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
TM55RZ/EZ-24,-2H
•IT (AV) Average on-state current ............ 55A
•IF (AV) Average forward current ............ 55A
•VRRM Repetitive peak reverse voltage
.... 1200/1600V
•VDRM Repetitive peak off-state voltage
.... 1200/1600V
•MIX DOUBLE ARMS
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
93.5
80
16.5 23 23 3–M5
2–φ6.5
26
13
K1 G1
Tab#110, t=0.5
30
21
6.5
9
(RZ)
A1K2CR K1
K1G1
A2
(EZ)
A1CR K1K2
K1G1
SR
A2
SR
LABEL
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Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
24
1200
1350
960
1200
1350
960
2H
1600
1700
1280
1600
1700
1280
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A2s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180° conduction, TC=81°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=1.0A, Tj=125°C
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
86
55
1100
5.0 × 103
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
IT (RMS), IF (RMS)
I
T (AV)
, I
F (AV)
ITSM, IFSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
—
—
Parameter
RMS current
Average current
Surge (non-repetitive) current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Limits
Symbol
IRRM
IDRM
VTM, VFM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
Tj=125°C, ITM=IFM=165A, instantaneous meas.
Tj=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, RL=2Ω
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
10
10
1.5
—
2.0
—
100
0.5
0.2
—
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
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Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
VRRM VRSM VR (DC) VDRM
—
VDSM
—
VD (DC)
—
IT (RMS)
IF (RMS)
IT (AV)
IF (AV)
ITSM
IFSM
I2tdi/dt
—
Item
Thyristor
Diode
PGM
—
PG (AV)
—
VFGM
—
IFGM
—
TjTstg
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
IRRM IDRM
—
dv/dt
—
VGT
—
VGD
—
VTM
VFM
IGT
—
Rth (j-c)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
CURRENT
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
CURRENT (A)GATE VOLTAGE (V)
SURGE (NON-REPETITIVE)
CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V)
GATE CURRENT (mA) TIME (s)
Rth (c-f)
0
10
1
10
0
10
–1
10
–2
10
–3
10
1
10
0
10
4
10
3
10
2
10
1
10
–1
10
3
10
2
10
1
10
0
10
705030207532
200
400
1200
600
800
1000
101 100
0.6
7
5
3
2
7
5
3
2
7
5
3
2
0.8 1.2 2.0 2.21.61.0 1.4 1.8
Tj=125°C
753275327532
3
2
7
5
3
2
7
5
3
2
4
7
5
4
VGT=3.0V
IGT=
100mA
IFGM=2.0A
PGM=5.0W
VFGM=10V
VGD=0.25V
PG(AV)=
0.50W
Tj=25°C
753275327532
0.8
0
7532
0.1
0.2
0.3
0.4
0.5
0.6
0.7
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Feb.1999
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE CURRENT (A)AVERAGE CURRENT (A)
MAXIMUM AVERAGE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
AVERAGE CURRENT (A) AVERAGE CURRENT (A)
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
AVERAGE POWER DISSIPATION (W)
RMS CURRENT (A)RMS CURRENT (A)
AVERAGE POWER DISSIPATION (W)
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
00 10020
100
80
20
40 60
40
60
80
θ
360°
θ=30°
60°
270° DC
180°
120°
90°
130
50
60
70
80
90
100
110
120
0 10020 8040 60
θ=30° 60° DC270°
θ
360°
180°90°
120°
00 1604020
160
60
140
120
100
80
60
40
20
80 100 120 140
θ=180°
60°
90°
30°
θ
360°
θ
120°
50 0 1604020
130
60 80 100 120 140
60
70
80
90
100
110
120
θ
360°
θ
θ=30°
60°
90°
120°
180°
00803010 50 70
80
10
20
30
40
50
60
70
20 40 60
θ=30°
120°
90°
180°
θ
360°
60°
130
50 0608010 20 50
60
70
80
90
100
110
120
30 40 70
θ=30° 60°
θ
360°
120° 180°90°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
MODULE
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
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Feb.1999
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
POWER DISSIPATION (W)
(PER SINGLE MODULE)
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGEMEDIUM POWER GENERAL USE
INSULATED TYPE
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
POWER DISSIPATION (W)
(PER SINGLE MODULE)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
00 1608040
160
120
140
120
100
80
60
40
20
20 14060 100
θ=30°
60°
120°
90°
θ
360°
50 0 1608040
130
120
60
20 14060 100
70
80
90
100
110
120
90°
θ=30° 60°
120°
θ
360°
00 1606020
160
100
140
120
100
80
60
40
20
12040 80 140
θ=30°
60°
120°
90°
180°
θ
360°
θ
130
50 0 1604020 100 120
60
60 80 140
70
80
90
100
110
120
θ
360°
θ
θ=30° 60° 180°120°90°
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
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