DATA SH EET
Product specification
File under Discrete Semiconductors, SC07 1995 Apr 07
DISCRETE SEMICONDUCTORS
Philips Semiconductors
BSS110
P-channel enhancement mode
vertical D-MOS transistor
1995 Apr 07 2
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSS110
FEATURES
•Low threshold voltage
•Direct interface to C-MOS, TTL, etc.
•High speed switching
•No secondary breakdown.
APPLICATIONS
•Intended for use as a Line current interruptor in
telephone sets and for applications in relay, high speed
and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
PINNING - TO-92 variant
PIN SYMBOL DESCRIPTION
1 s source
2 g gate
3 d drain
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM144
1
3
2
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage (DC) − −50 V
VGSO gate-source voltage (DC) open drain − ±20 V
VGSth gate-source threshold voltage ID=−1 mA; VDS = VGS −0.8 −2 V
IDdrain current (DC) − −170 mA
RDSon drain-source on-state resistance ID=−170 mA; VGS =−10 V −10 Ω
Ptot total power dissipation up to Tamb = 25 °C−830 mW
1995 Apr 07 3
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSS110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Device mounted on a printed-circuit board, maximum lead length 4 mm.
CHARACTERISTICS
Tj= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage (DC) − −50 V
VGSO gate-source voltage (DC) open drain − ±20 V
IDdrain current (DC) − −170 mA
IDM peak drain current − −520 mA
Ptot total power dissipation up to Tamb = 25 °C; note 1 −830 mW
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID=−10 µA−50 − − V
VGSth gate-source threshold voltage VDS = VGS; ID=−1 mA −0.8 − −2 V
IDSS drain-source leakage current VGS = 0; VDS =−40 V − − −100 nA
VGS = 0; VDS =−50 V − − −10 µA
VGS = 0; VDS =−50 V; Tj= 125 °C− − −60 µA
IGSS gate leakage current VDS = 0; VGS =±20 V − − ±10 nA
RDSon drain-source on-state resistance VGS =−10 V; ID=−170 mA − − 10 Ω
yfsforward transfer admittance VDS =−25 V; ID=−170 mA 50 − − mS
Ciss input capacitance VGS = 0; VDS =−25 V; f = 1 MHz −25 45 pF
Coss output capacitance VGS = 0; VDS =−25 V; f = 1 MHz −15 25 pF
Crss reverse transfer capacitance VGS = 0; VDS =−25 V; f = 1 MHz −3.5 12 pF
Switching times (see Figs 2 and 3)
ton turn-on time VGS = 0 to −10 V; VDD =−40 V;
ID=−200 mA −3−ns
toffturn-off time VGS =−10 to 0 V; VDD =−40 V;
ID=−200 mA −7−ns
1995 Apr 07 4
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSS110
Fig.2 Switching time test circuit.
handbook, halfpage
MLD189
50 Ω
ID
10 V
0
V = 40 V
DD
Fig.3 Input and output waveforms.
handbook, halfpage
MBB690
10 %
90 %
90 %
10 %
ton toff
OUTPUT
INPUT
Fig.4 Power derating curve.
handbook, halfpage
0 200
1.0
0
0.2
0.4
0.6
0.8
MLD190
T ( C)
amb o
50 100 150
Ptot
(W)
δ= 0.01.
Tamb = 25 °C.
(1) RDSon limitation.
Fig.5 DC SOAR.
handbook, halfpage
MLD193
103
10
1 10 10
VDS (V)
ID
(mA)
2
102
1
tpT
P
t
tp
T
δ=
1 s
100
ms
DC
(1) tp =
10 ms
1995 Apr 07 5
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSS110
Fig.6 Capacitance as a function of drain source
voltage; typical values.
VGS = 0.
Tj= 25 °C.
f = 1 MHz.
handbook, halfpage
0
80
60
40
20
010 20 30
MLD191
C
(pF)
V (V)
DS
Crss
Coss
Ciss
Fig.7 Typical output characteristics.
Tj= 25 °C.
handbook, halfpage
0 2 10 12
600
200
0
400
MLD197
468V (V)
DS
V =
GS
10 V 7.5 V 6 V
5 V
4 V
3 V
2.5 V
ID
(mA)
Fig.8 Typical transfer characteristics.
VDS =−10 V.
Tj= 25 °C.
handbook, halfpage
0 2 4 10
600
200
0
400
MLD196
6
ID
(mA)
V (V)
GS
8
Fig.9 Drain-source on-state resistance as a
function of drain current; typical values.
Tj= 25 °C.
handbook, halfpage
60
0
40
1
MLD198
10 102103
20
I (mA)
RDSon
(Ω)
D
V =
GS 3 V2.5 V
7.5 V
10 V
4 V 5 V
1995 Apr 07 6
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSS110
Fig.10 Temperature coefficient of gate-source
threshold voltage.
ID=−1 mA; VDS = VGS.
kVGSth at Tj
VGSth at 25°C
------------------------------------
--
=
handbook, halfpage
0.6
0.8
1.0
1.2
0 50 100 15050
k
T ( C)
jo
MLD195
Fig.11 Temperature coefficient of drain-source
on-state resistance.
(1) ID=−170 mA; VGS =−10 V.
(2) ID=−20 mA; VGS =−2.4 V.
kRDSon at Tj
RDSon at 25 °C
---------------------------------------
--
=
handbook, halfpage
0.6
1.0
1.4
1.8
0 50 100 15050
k
T ( C)
jo
MLD194
(1)
(2)
Fig.12 Thermal resistance from junction to ambient as a function of pulse time; typical values.
Tamb = 25 °C.
handbook, full pagewidth
1
10
10
tp(s) 10101 10
MLD192
(K/W)
Rth j-a
1
10 5
10
6
10 3
10
4
10 2
10 2 31
10
tpT
P
t
tp
T
δ=
δ =
0.75
0.5
0.1
0
0.05
0.01
0.02
0.2
2
103
1995 Apr 07 7
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSS110
PACKAGE OUTLINE
Fig.13 TO-92 variant.
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
handbook, full pagewidth
MBC015 - 1
2.54
4.8
max
4.2 max
1.6
0.66
0.56
1
2
3
5.2 max 12.7 min
2.5 max (1)
0.48
0.40
0.40
min
1995 Apr 07 8
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSS110
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com/ps/
(1) CGY2020G_1.mif June 26, 1996 11:51 am
Philips Semiconductors – a worldwide company
© Philips Electronics N.V. 1996 SCA50
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Printed in The Netherlands 647021/1200/01/pp12 Date of release: 1996 Jul 17 Document order number: 9397 750 00971
