2N3700
2N3701
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701
are silicon NPN transistors designed for high current
general purpose applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 140 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 1.0 A
Power Dissipation (TC=25°C) PD 1.8 W
Power Dissipation PD 500 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 350 °C/W
Thermal Resistance ΘJC 97.2 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3700 2N3701
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=90V - 10 - 10 nA
ICBO V
CB=90V, TA=150°C - 10 - 10 μA
IEBO V
EB=5.0V - 10 - 10 nA
BVCBO I
C=100μA 140 - 140 - V
BVCEO I
C=30mA 80 - 80 - V
BVEBO I
E=100μA 7.0 - 7.0 - V
VCE(SAT) I
C=150mA, IB=15mA - 0.2 - 0.2 V
VCE(SAT) I
C=500mA, IB=50mA - 0.5 - 0.5 V
VBE(SAT) I
C=150mA, IB=15mA - 1.1 - 1.1 V
hFE V
CE=10V, IC=0.1mA 50 - 30 100
hFE V
CE=10V, IC=10mA 90 - 40 120
hFE V
CE=10V, IC=150mA 100 300 40 120
hFE V
CE=10V, IC=150mA, TA=-55°C 40 - - -
hFE V
CE=10V, IC=500mA 50 - 30 100
hFE V
CE=10V, IC=1.0A 15 - 15 -
TO-18 CASE
R1 (4-March 2014)
www.centralsemi.com