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T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 4 of 9
2N6764, 2N6766 , 2N 6768 and 2N6770
ELECTRI CAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
Paramete r s / Test Conditions
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A , VDS = 200 V
V
= 10 V, I
= 12.0 A, V
= 250 V
2N6764
2N6766
2N6768
2N6770
Qg(on)
125
115
110
120
nC
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764
2N6766
2N6768
2N6770
Qgs
22
22
18
19
nC
G ate t o D r ain C harge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764
2N6766
2N6768
2N6770
Qgd
65
60
65
70
nC
SW ITCHING CHARACTE RISTICS
Paramete r s / Test Conditions
ID = 38.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, V GS = 10 V, RG = 2.35
Ω
2N6764
2N6766
2N6768
td(on)
35
ns
ID = 38.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, V GS = 1 0 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, V GS = 10 V, RG = 2.35
Ω
2N6764
2N6766
2N6768
tr
190
ns
ID = 38.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, V GS = 10 V , RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, V GS = 10 V, RG = 2.35
Ω
2N6764
2N6766
2N6768
td(off)
170
ns
ID = 38.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, V GS = 1 0 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, V GS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, V GS = 10 V, RG = 2.35
Ω
2N6764
2N6766
2N6768
tf
130
ns
Diode Reverse Recovery Ti me
di/dt = 10 0 A/µ s , VDD ≤ 30 V, ID = 38.0 A
di/dt = 10 0 A/µ s , VDD ≤ 30 V, ID = 30.0 A
di/dt = 10 0 A/µ s , VDD ≤ 30 V, ID = 14.0 A
di/dt = 10 0 A/µ s , VDD ≤ 30 V, ID = 12.0 A
2N6764
2N6766
2N6768
trr
500
950
1200
1600
ns