Voltage
11 to 240 V Power
0.8 W
• Silicon planar zener diodes
• Low profile surface-mount package
• Low leakage curren
• Excellent stability
• High temperature soldering:
260 °C / 10 seconds at terminals
Maxim un Ratings and Electrical Characteristics at 25 °C
MECHANICAL DATA
• Terminal: Pure tin plated lead free.
• Marking code: as table
• Weight: 10 mg (approx.)
Thermal Resistance Junction to Ambient Air (Note 1)
R.JA
Thermal Resistance Junction to lead
Operating and Storage Temperature Range
Tj - Tstg
-65 to + 175
Sep - 08
R
K
/W
2.3
0.8
300
VF
Ptot
Power Dissipation
Forward Voltage
TL = 80 °C
TA = 25 °C (Note 1)
Non-Repetitive Peak Pulse Power Dissipation
PZSM
R.JL
BZD27C Series
0.8 W Surface Mount Glass Passivated Zener Diode
• Case: Sub SMA Plastic
• Packaging method: refer to package code
• Zener and surge curren specification
1.2
@ IF = 0.2A
100 µs square pulse (Note 2)
150
Non-Repetitive Peak Pulse Power Dissipation
PRSM
10/1000 µs waveform (BZD27-C7V5P to BZD27-C100P)
(Note 2)
SYMBOL TYPE NUMBER Value Unit
W
W
V
W
100
Non-Repetitive Peak Pulse Power Dissipation
PRSM
10/1000 µs waveform (BZD27-110P to BZD27-C200P)
(Note 2)
W
180
K
/W
30
°C
Notes: 1.Mounted on Epoxy-Glass PCB with 3 x 3 mm Cu pads (
≥40 µmthick)
2. Tj = 25
°
C Prior to surge.
Dimensions in mm. CASE:
M1F (DO219AA)
XXX = Marking code
WW = Week code
Y = Year code
Working Voltage
(Note 1)
V
Min.
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C24P
BZD27C27P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C62P
BZD27C68P
BZD27C100P
BZD27C120P
BZD27C200P
BZD27C220P
BZD27C240P
Z11
Z12
Z13
Z15
Z16
Z18
Z24
Z27
Z33
Z36
Z39
Z43
Z47
Z62
Z68
10Z
12Z
20Z
22Z
24Z
4.0
4.0
5.0
5.0
6.0
6.0
7.0
7.0
8.0
21
21
24
24
25
25
60
80
200
350
400
7
7
10
10
15
15
15
15
15
40
40
45
45
80
80
200
250
500
750
850
8.2
9.1
10
11
12
13
18
20
24
27
30
33
36
47
51
75
91
150
160
180
VR
Max.
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
IR
Min. Max.Max.
Max.
Device
Temperature
ALPH
Z @
IZ
Coefficient
10.4
11.4
12.4
13.8
15.3
16.8
22.8
25.1
31
34
37
40
44
58
64
94
114
188
208
228
11.6
12.7
14.1
15.6
17.1
19.1
25.6
28.9
35
38
41
46
50
66
72
106
127
212
233
256
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
4.0
3.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
50
50
25
25
25
25
25
25
10
10
10
10
10
10
5
5
5
2
2
Sep - 08
BZD27C Series
Reverse Current @
Reverse Voltage
µA
Ma
Current
IZT
Test
% /
°C
Device
Marking
Code
Differential
Resistance
V
Z @
IZT
Vrdif
@
IZ
Ω
typ
Notes: 1. Pulse test: tp
≤ 5ms.
Rating And Characteristic Curves
POWER DISSIPATION vs AMBIENT
TEMPERATURE
0100 175
3.0
2.5
2.0
1.5
1.0
0.5
PD, power dissipation (W)
10
0.1
FORWARD CURRENT vs FORWARD
VOLTAGE
VF, forward voltage (V)
IF, forward current (A)
160
MAXIMUM PULSE POWER DISSIPATION vs
ZENER VOLTAGE
0 100 200
0
100
120
140
150
PPDM, Max. pulse power dissipation (W)
80
Vz, zener voltage (V)
BZD27C Series
0
40
Sep - 08
60
TYP. VFMAX. VF
1
0.7 1.1 1.51.4 1.60.6 0.8 0.9 1.2 1.31.0
10000
TYP. DIODE CAPACITANCE vs
REVERSE VOLTAGE
0.0 0.5 3.0
10
1000
2.0
CD, Typ. junction capacitance (pF)
VR, reverse voltage (V)
100
1.0 1.5 2.5
SEPOINT TEMPERATURE
AMBIENT TEMPERATURE
Tamb, ambient temperature °C
50 75 125 150
20
50 7525 125 175
C27P
C12P
C200P
