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DATA SH EET
Product data sheet
Supersedes data of 1997 Sep 03
2003 Sep 09
DISCRETE SEMICONDUCTORS
BF820W
NPN high-voltage transistor
ge
M3D102
2003 Sep 09 2
NXP Semiconductors Product data sheet
NPN high-voltage transistor BF820W
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
•Telephony and p rofessional communication equipment.
DESCRIPTION
NPN high-vol ta ge transistor in a SO T3 23 plastic package.
PINNING
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
MARKING
Notes
1. * = p : made in Hong Kong .
* = t : made in Malaysia.
* = W : made in China.
TYPE NUMBER MARKING CODE(1)
BF820W 1V*
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −300 V
VCEO collector-emitter voltage open base −300 V
ICM peak collector current −100 mA
Ptot total power dissipation Tamb ≤ 25 °C−200 mW
hFE DC current gain IC = 25 mA; VCE = 20 V 50 −
Cre feedback capacitance IC = ic = 0; VCB = 30 V; f = 1 MHz −1.6 pF
fTtransition frequen c y IC = 10 mA; VCE = 10 V; f = 100 MHz 60 −MHz
2003 Sep 09 3
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistor BF820W
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −300 V
VCEO collector-emitter voltage open base −300 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −50 mA
ICM peak collector current −100 mA
IBM peak base current −50 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 200 V −10 nA
IE = 0; VCB = 200 V; Tj = 150 °C−10 µA
IEBO emitter cut-off current IC = 0; VEB = 5 V −50 nA
hFE DC current gain IC = 25 mA; VCE = 20 V 50 −
VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 5 mA; note 1 −600 mV
Cre feedback capacitance IC = ic = 0; VCB = 30 V; f = 1 MHz −1.6 pF
fTtransition frequen c y IC = 10 mA; VCE = 10 V; f = 100 MHz 60 −MHz
2003 Sep 09 4
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistor BF820W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28
2003 Sep 09 5
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistor BF820W
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The prod uct status of dev i ce(s) described in this document may have changed si nce this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any incons istency or conflict betw een information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, c onveyance or
implication of any license under any copyrights, patents or
other industr i al or inte llectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
For additional information p lease visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not fo rm p art of any quotation or cont ra ct, is b elieve d to be accurate and reli a ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/04/pp6 Date of release: 2003 Sep 09 Document orde r number: 9397 750 11651
