A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifications are sub
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ect to chan
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e without notice.
CHARACTERISTICS TC = 25 OC NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 3 mA 45 V
BVCER IC = 20 mA RBE = 10 Ω 45 V
BVEBO IE = 3 mA 3.5 V
ICBO VCE = 28 V 500 µA
hFE VCE = 5.0 V IC = 100 mA 15 150 ---
Ft VCE = 20 V IC = 100 mA 600 MHz
Cob VCB = 28 V f = 1.0 MHz 10 pF
PG
ηC VCE = 28 V POUT = 5.0 W f = 1,000 MHz 6.0
40 7.0
50 dB
%
NPN SILICON RF POWER TRANSISTOR
2N4431
DESCRIPTION:
The ASI 2N4431 is Designed for
Class C Amplifier Applications Up to
1,000 MHz.
FEATURES:
• PG = 7.0 dB Typ. at 5.0 W/1000 MHz
• Emitter Ballasting for Ruggedness
• Omnigold™ Metallization System
MAXIMUM RATINGS
IC 2.0 A
VCB 45 V
PDISS 20 W @ TC = 25 OC
TJ -65 to +200 OC
TSTG -65 to +150 OC
θJC 8.8 OC/W
PACKAGE STYLE .280 4L STUD
ORDER CODE: ASI10805
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H.245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D C
B
45° A
#8-32 UNC
I
J
E
E
B
C
