RHRP15120
15 A, 1200 V, Hyperfast Diode
The RHRP15120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are
intended to be used as freewheeling/ clamping diodes
and diodes in a variety of switching power supplies and
other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Symbol
Features
• Hyperfast Recovery trr = 75 ns (@ IF = 15 A)
• Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP15120 TO-220AC-2L RHR15120
NOTE: When ordering, use the entire part number.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RHRP15120 UNIT
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 140oC)
15 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20 kHz)
30 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM
(Halfwave, 1 Phase, 60 Hz)
200 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD100 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-65 to 175 oC
Data Sheet November 2013
Publication Order Number:
RHRP15120/D
1
©2001 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNIT
VF- - 3.2 V
- - 2.6 V
IR- - 100 µA
- - 500 µA
Trr --65ns
--75ns
ta- 36 - ns
tb- 28 - ns
Qrr - 150 - nC
CJ
IF = 15 A
IF = 15 A, TC = 150oC
VR = 1200 V
VR = 1200 V, TC = 150oC
IF = 1 A, dIF/dt = 100 A/µs
IF = 15 A, dIF/dt = 100 A/µs
IF = 15 A, dIF/dt = 100 A/µs
IF = 15 A, dIF/dt = 100 A/µs
IF = 15 A, dIF/dt = 100 A/µs
VR = 10 V, IF = 0 A- 55 - pF
RθJC - - 1.5 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300 µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
Qrr = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
100
0.5
10
0123 54
25oC
100oC
175oC
VR, REVERSE VOLTAGE (V)
0 400 800 1200600 1000
1000
0.01
0.1
1
10
IR, REVERSE CURRENT (µA)
200
100
100oC
25oC
175oC
RHRP15120
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2
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves (Continued)
IF, FORWARD CURRENT (A)
0.5
0
30
15
151
45
75
t, RECOVERY TIMES (ns)
10
60
5
trr
ta
TC = 25oC, dIF/dt = 100A/µs
tb
IF, FORWARD CURRENT (A)
0.5
0
50
25
151
75
150
t, RECOVERY TIMES (ns)
10
tb
5
trr
ta
125
100
TC = 100oC, dIF/dt = 100A/µs
IF, FORWARD CURRENT (A)
0.5
0
50
151
200
t, RECOVERY TIMES (ns)
105
trr
ta
100
150
tb
TC = 175oC, dIF/dt = 100A/µs
15
3
0
100 115 145 175160
6
9
12
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
130
DC
SQ. WAVE
VR, REVERSE VOLTAGE (V)
25
175
0
50
050 100 150 200
75
100
CJ, JUNCTION CAPACITANCE (pF)
125
150
RHRP15120
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3
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RHRP15120
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4
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