© 2015 IXYS CORPORATION, All Rights Reserved DS100425C(6/15)
High Voltage
Power MOSFET
Features
International Standard Packages
Molding Epoxies Weet UL 94 V-0
Flammability Classification
Fast Intrinsic Diode
Low Package Inductance
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
IXTT12N150
IXTH12N150
VDSS = 1500V
ID25 = 12A
RDS(on)
2.2
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 1500 V
VDGR TJ= 25C to 150C, RGS = 1M1500 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C12A
IDM TC= 25C, Pulse Width Limited by TJM 40 A
IATC= 25°C 6 A
EAS TC= 25°C 750 mJ
dv/dt IS IDM, VDD VDSS,T
J 150C 5 V/ns
PDTC= 25C 890 W
TJ- 55 ... +150 C
TJM 150 C
Tstg - 55 ... +150 C
TL1.6mm (0.062 in.) From Case for 10s 300 C
TSOLD Plastic Body for 10s 260 C
MdMounting Torque 1.13 / 10 Nm/lb.in.
Weight TO-268 4.0 g
TO-247 6.0 g
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1500 V
VGS(th) VDS = VGS, ID = 250A 2.5 4.5 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 25 A
TJ = 125C 500A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 2.2
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
SD (Tab)
D
TO-268 (IXTT)
S
G
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT12N150
IXTH12N150
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 (External)
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 8 13 S
Ciss 3720 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 240 pF
Crss 80 pF
td(on) 26 ns
tr 16 ns
td(off) 53 ns
tf 14 ns
Qg(on) 106 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 17 nC
Qgd 50 nC
RthJC 0.14 C/W
RthCS TO-247 0.21 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 12 A
ISM Repetitive, Pulse Width Limited by TJM 48 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 1.2 μs
IRM 24.5 A
QRM 14.8 μC
IF = 6A, -di/dt = 100A/s
VR = 100V, VGS = 0V
TO-247 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
e
P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2015 IXYS CORPORATION, All Rights Reserved
IXTT12N150
IXTH12N150
Fig. 6. Input Admittance
0
2
4
6
8
10
12
14
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Am peres
T
J
= 125ºC
25º C
- 40º C
Fig. 5. Maximum Drain Current v s.
Case Temperature
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centi gra de
I
D
- Amperes
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
2
4
6
8
10
12
14
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5.5V
5V
Fig. 2. Output Characteristics @ T
J
= 125ºC
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
5V
4V
V
GS
= 10V
6V
Fig. 3. R
DS(on)
Normalized to I
D
= 6A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Cen tigr ade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 12A
I
D
= 6A
Fig. 4. R
DS(on)
Normalized to I
D
= 6A Value vs.
Dra in Curr ent
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 2 4 6 8 10 12 14
I
D
- A m peres
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT12N150
IXTH12N150
IXYS REF: T_12N150 (8M) 5-23-11
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
20
22
02468101214
I
D
- Am peres
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
30
35
40
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 700V
I
D
= 6A
I
G
= 10m A
Fig. 10. Ca pacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 1 2. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Wi dth - Seconds
Z
(th)JC
- ºC / W
Fig. 11. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Puls e
100µs
1ms
R
DS(on)
Limit 25µs
10ms
DC
Mouser Electronics
Authorized Distributor
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