SIEMENS NPN Silicon Switching Transistor SMBT 3904 @ High DC current gain: 0.1 mA to 100 mA @ Low collector-emitter saturation voltage @ Complementary type: SMBT 3906 (PNP) vPSO5161 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 SMBT 3904 siA Q68000-A4416 B E Cc SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-ermitter voltage Vceo 40 Vv Collector-base voltage Veso 60 Emitter-base voltage Vepo 6 Collector current Ic 200 mA Total power dissipation, Ts = 69C Prot 330 mW Junction temperature Tj 150 Cc Storage temperature range Tg 65... + 150 Thermal Resistance Junction - ambient?) Rtn sa < 315 KAW Junction - soldering point Rhus < 245 1) For detailed information see chapter Package Outlines. 2} Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 1763 5.91SIEMENS SMBT 3904 Electrical Characteristics at Ts = 25 C, unless otherwise specified. Parameter Symbol Values min. | typ. | max. Unit DC characteristics Collector-emitter breakdown voltage Ic=1mMA Vierycko 40 Collector-base breakdown voltage Ic=10 pA Vipryceo 60 Emitter-base breakdown voltage le = 10 pA Viarjeeo Collector-base cutoff current Vcs = 30 V Tcpo nA DC current gain Io = 100 pA, Vee=1V Ic= 1mA, Vee=1V Ie= 10mMA, Vce = 1 V1) Ic= 50mA, Vee = 1 VV? Ie = 100 mA, Vee = 1 V1) Are 40 70 100 30 Collector-emitter saturation voltage Io=10mA, le=1mA Ic = 50 mA, ig =5 MA Veesat ~ 0.2 - 0.3 Base-emitter saturation voltage) Ic = 10 mA, ia = 1 mA Ic = 50 mA, Je=5 mA Veesat 0.65 ~ 0.85 1} Pulse test conditions: t < 300 ys, D = 2 %. Semiconductor Group 1764SIEMENS SMBT 3904 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values min . |typ. | max. Unit AC characteristics Transition frequency Ic = 10 MA, Vce = 20 V, f= 100 MHz 300 MHz Output capacitance Vee = 5 V, f= 1 MHz Cobo Input capacitance Vee = 0.5 V, f= 1 MHz Civo pF Input impedance Ic=1MA, Vce = 10 V, f= 1 kHz fite Open-circuit reverse voltage transfer ratio Ic=14MA, Voce = 10 V, f= 1 kHz hize 0.5 10-4 Short-circuit forward current transfer ratio le=1mMA, Vee = 10V, f= 1 kHz hate 100 Open-circuit output admittance Ic=1MmMA, Vee = 10 V, f= 1 kHz h2260 uS Noise figure Ic = 100 pA, Vee = 5 V, Rs = 1kQ, f= 1 kHz dB Veo=3V,Jco=10mA, fer =1mA Veeco = 0.5 V Delay time Rise time Veco = 3 V, Ic = 10 MA, Is = lee = 1 MA Storage time Fall time (see diagrams) ta tr tstg ~ 35 - 200 ns ns ns ns Semiconductor Group 1765SIEMENS SMBT 3904 Test circuits Delay and rise time +3.0V 4 300ns pe 0 = 2% 2750 +10.9V _j -0.5V 4.0pF <1.0ns EHNO0061 Storage and fall time +3.0V 10< #, < 500s I pt D=2% pee + 10.9 0 -3.1V- <1.0ns EHNGO062 Semiconductor Group 1766SIEMENS SMBT 3904 Total power dissipation Pr = f (Ta"; Ts) * Package mounted on epoxy SMBT 3904 HP00755 400 Py mW ALN 300 \ \ 200 N r aNN \ 100 N %5 50 100 c 150 ae TG Permissible pulse load Pio max / Pict pc = f (te) SWET 3904 EHPOOSSS 105 P. fot mox 5 Pros De ali at Ht CHI 10 $ alll sii oN TT ETM 107 1075 107* 1073 tL: +f, Semiconductor Group 1767 Saturation voltage /c = f (Vee sa, Voce sat) SMBT 3904 2 EHPOO7SS mA Ie 1 | 10! 10 0 02 04 06 08 1.01.2 Vee sat? Veg sat DC current gain Are = f (/c) Vce = 10 V, normalized 1 SMBT 3904 EHPOO7E5 o- 107) 5 10' ma 10? ~ ly 5 10SIEMENS SMBT 3904 Short-circuit forward current transfer ratio hi. = f (Ic) Vee = 10V, f= 1 MHz 3 SMBT 3904 EHPO0759 10 hate 10? Delay time ta = f (Ic) Rise time , = f (Ic) 3 SMBT 3904 EHPOO761 10 ns tat 102 10' 5 10? ma 5 103 _ Ip 1 10 5 10! Semiconductor Group Open-circuit output admittance hve = f (Ic) Vee = 10 V, f= 1 MHz SMaT 3904 10? EHPOO760 us 5 hod 10! 10 107! 5 10 mA 5 10 Io Storage time tsg = f (Jc) 1 3 Mat 3904 EHPOO762 0 ns 10! 5 10! 5 102 ma 5 10 mle 1768SIEMENS SMBT 3904 Fall time tt = f (Jc) Rise time tf = f (Ic) SMBT 3904 EHPOO763 EHPOO764 10 ns 10! 10 4 2 3 10 5 10 5 10? mA 5 10 mle Input impedance hire = f (Ic) Vee = 10 V, f= 1 kHz SMBT 3904 EHPOO757 19? kQ Aite 10! +> I, Semiconductor Group 103 SMBT 3904 ns . 25 2 12526 10! 10 5 10! Te Open-circuit reverse voltage transfer ratio hize = f (Ic) Vee = 10 V, f= 1 kHz 4973 SMBt 3904 A, 2e ' 107+ 1075 107! 5 10 5 10? mA 5 103 EHPOO7SS mA 10! |, 1769