NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 APRIL 94
FEATURES
* 40 Volt VCEO
* Fast switching
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6V
Continuous Collector Current IC800 mA
Power Dissipation at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 75 V IC
=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 40 V IC
=10mA, IB=0
Emitter-Base Breakdown
Voltage
V(BR)EBO 6V
IE=10µA, IC
=0
Collector Cut-Off Current ICBO 10
10
nA
µA
VCB=60V, IE=0
VCB=60V, IE=0, Tamb
=150°C
Emitter Cut-Off Current IEBO 10 nA VEB
=3V, IC
=0
Collector-Emitter Cut-Off
Current
ICEX 10 nA VCE=60V, VEB(off)
=3V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.3
1.0
V
V
IC
=150mA, IB=15mA*
IC
=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.6 1.2
2.0
V
V
IC
=150mA, IB=15mA*
IC
=500mA, IB=50mA*
Static Forward Current
Transfer Ratio
hFE 35
50
75
35
100
50
40
300
IC
=0.1mA, VCE
=10V*
IC
=1mA, VCE
=10V
IC
=10mA, VCE
=10V*
IC
=10mA, VCE
=10V, Tamb
=-55°C
IC
=150mA, VCE
=10V*
IC
=150mA, VCE
=1V*
IC
=500mA, VCE
=10V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
C
B
E
MPS2222A
3-66
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition
Frequency
fT300 MHz IC=20mA, VCE=20V
f=100MHz
Output Capacitance Cobo 8pFV
CB
=10V, IE=0, f=140KHz
Input Capacitance Cibo 25 pF VEB
=0.5V, IC=0 f=140KHz
Delay Time td10 ns VCE
=30V, VBE(off)
=0.5V
IC=150mA, IB1=15mA
(See Delay Test Circuit)
Rise Time tr25 ns
Storage Time ts225 ns VCE
=30V, IC
=150mA
IB1= IB2=15mA
(See Storage Test Circuit)
Fall Time tf60 ns
MPS2222A
Scope:
Rin > 100 kΩ
Cin < 12 pF
Rise Time < 5 ns
0
0.5V
9.9V
Generator rise time <2ns
Pulse width (t1)<200ns
Duty cycle = 2%
+30V
200Ω
619Ω
DELAY AND RISE TEST CIRCUIT
+30V
1N916
-3V
1KΩ
200
Ω
Scope:
R
in
> 100 kΩ
C
in
< 12 pF
Rise Time < 5 ns
-13.8 V
=500µs
=100µs
<5ns
+16.2 V
0
Duty cycle = 2%
STORAGE TIME AND FALL TIME TEST CIRCUIT
3-67
NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 APRIL 94
FEATURES
* 40 Volt VCEO
* Fast switching
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6V
Continuous Collector Current IC800 mA
Power Dissipation at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 75 V IC
=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 40 V IC
=10mA, IB=0
Emitter-Base Breakdown
Voltage
V(BR)EBO 6V
IE=10µA, IC
=0
Collector Cut-Off Current ICBO 10
10
nA
µA
VCB=60V, IE=0
VCB=60V, IE=0, Tamb
=150°C
Emitter Cut-Off Current IEBO 10 nA VEB
=3V, IC
=0
Collector-Emitter Cut-Off
Current
ICEX 10 nA VCE=60V, VEB(off)
=3V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.3
1.0
V
V
IC
=150mA, IB=15mA*
IC
=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.6 1.2
2.0
V
V
IC
=150mA, IB=15mA*
IC
=500mA, IB=50mA*
Static Forward Current
Transfer Ratio
hFE 35
50
75
35
100
50
40
300
IC
=0.1mA, VCE
=10V*
IC
=1mA, VCE
=10V
IC
=10mA, VCE
=10V*
IC
=10mA, VCE
=10V, Tamb
=-55°C
IC
=150mA, VCE
=10V*
IC
=150mA, VCE
=1V*
IC
=500mA, VCE
=10V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
C
B
E
MPS2222A
3-66
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition
Frequency
fT300 MHz IC=20mA, VCE=20V
f=100MHz
Output Capacitance Cobo 8pFV
CB
=10V, IE=0, f=140KHz
Input Capacitance Cibo 25 pF VEB
=0.5V, IC=0 f=140KHz
Delay Time td10 ns VCE
=30V, VBE(off)
=0.5V
IC=150mA, IB1=15mA
(See Delay Test Circuit)
Rise Time tr25 ns
Storage Time ts225 ns VCE
=30V, IC
=150mA
IB1= IB2=15mA
(See Storage Test Circuit)
Fall Time tf60 ns
MPS2222A
Scope:
Rin > 100 kΩ
Cin < 12 pF
Rise Time < 5 ns
0
0.5V
9.9V
Generator rise time <2ns
Pulse width (t1)<200ns
Duty cycle = 2%
+30V
200Ω
619Ω
DELAY AND RISE TEST CIRCUIT
+30V
1N916
-3V
1KΩ
200
Ω
Scope:
R
in
> 100 kΩ
C
in
< 12 pF
Rise Time < 5 ns
-13.8 V
=500µs
=100µs
<5ns
+16.2 V
0
Duty cycle = 2%
STORAGE TIME AND FALL TIME TEST CIRCUIT
3-67
