INTEGRATED CIRCUITS DIVISION
XS170
Multifunction Telecom Switch
www.ixysic.com
DS-XS170-R04 1
Applications
Features
Description
Pin Configuration
• Telecommunications
• Telecom Switching
• Tip/Ring Circuits
• Modem Switching (Laptop, Notebook, Pocket Size)
• Hook Switch
• Dial Pulsing
• Ground Start
• Ringing Injection
• Instrumentation
• Multiplexers
• Data Acquisition
• Electronic Switching
• I/O Subsystems
• Meters (Watt-Hour, Water, Gas)
• Medical Equipment-Patient/Equipment Isolation
• Security
• Aerospace
• Industrial Controls
• 3750Vrms Input/Output Isolation
• Low Drive Power Requirements
• FCC Compatible
• VDE Compatible
• High Reliability
• Arc-Free With No Snubbing Circuits
• No EMI/RFI Generation
• Small 8-Pin Package
• Surface Mount Tape & Reel Version Available
• Flammability Rating UL 94 V-0
Parameter Rating Units
Blocking Voltage 350 VP
Load Current 100 mArms / mADC
On-Resistance (max) 50
Ordering Information
Part # Description
XS170 8-Pin DIP (50/Tube)
XS170S 8-Pin Surface Mount (50/Tube)
XS170STR 8-Pin Surface Mount (1000/Reel)
Switching Characteristics
of Normally Open Devices
Form-A
IF
ILOAD
10%
90%
ton toff
Approvals
1
2
3
4
8
7
6
5
+ LED - Relay
– LED - Relay
Collector - Phototransistor
Emitter - Phototransistor
Load - Relay (MOSFET Output)
Load - Relay (MOSFET Output)
LED - Phototransistor –/+
LED - Phototransistor +/–
• UL Recognized Component: File E76270
• EN/IEC 60950-1 Certified Component:
TUV Certificate: B 13 12 82667 003
The XS170 integrated circuit device combines a
350V, 100mA, 50, normally open (1-Form-A) relay
with an optocoupler in a single package. The relay
uses optically coupled MOSFET technology to
provide 3750Vrms of input to output isolation.
Its optically coupled outputs, which use the patented
OptoMOS architecture, are controlled by a highly
efficient infrared LED.
Telecom circuit designers, using the XS170, can now
take advantage of two discrete functions in a single
component that uses less space than traditional
discrete component solutions.
INTEGRATED CIRCUITS DIVISION
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2R04
XS170
Absolute Maximum Ratings @ 25ºC
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Typical values are characteristic of the device at +25°C,
and are the result of engineering evaluations. They are
provided for information purposes only, and are not part of
the manufacturing
testing requirements.
Parameter Ratings Units
Relay Blocking Voltage 350 VP
Reverse Input Voltage 5 V
Input Power Dissipation 1150 mW
Relay Input Control Current 50 mA
Peak (10ms) 1 A
Detector Input Control Current 100 mA
Total Power Dissipation 2800 mW
Isolation Voltage, Input to Output 3750 Vrms
Operational Temperature (T
A) -40 to +85 °C
Storage Temperature -40 to +125 °C
1 Derate linearly 1.33 mW / ºC
2 Derate linearly 6.67 mW / ºC
Electrical Characteristics @25ºC: Relay Section
Parameter Conditions Symbol Min Typ Max Units
Output Characteristics
Load Current, Continuous
Continuous - IL- - 100 mArms / mADC
Peak t=10ms ILPK - - ±350 mAP
On-Resistance IL=120mA RON -3350
Off-State Leakage Current VL=350V ILEAK --1 A
Switching Speeds
Turn-On IF=5mA, VL=10V ton --5 ms
Turn-Off toff --5
Output Capacitance IF=0mA, VL=50V, f=1MHz COUT -25 - pF
Input Characteristics
Input Control Current to Activate IL=120mA IF--2 mA
Input Control Current to Deactivate - IF0.4 0.7 - mA
Input Voltage Drop IF=5mA VF0.9 1.2 1.4 V
Reverse Input Current VR=5V IR--10 A
Common Characteristics
Capacitance, Input to Output VIO=0V, f=1MHz CIO -3 - pF
Parameter Conditions Symbol Min Typ Max Units
Output Characteristics
Phototransistor Blocking Voltage IC=10ABV
CEO 20 50 - V
Phototransistor Dark Current VCE=5V, IF=0mA ICEO - 50 500 nA
Saturation Voltage IC=2mA, IF=16mA VSAT - 0.3 0.5 V
Current Transfer Ratio IF=6mA, VCE=0.5V CTR 33 100 - %
Input Characteristics
Input Control Current IC=2mA, VCE=0.5V IF-26mA
Input Voltage Drop IF=5mA VF0.9 1.2 1.4 V
Input Current (Detector must be off) IC=1A, VCE=5V IF525 -A
Isolation, Input to Output - VI/O 3750 - - Vrms
Common Characteristics
Input to Output Capacitance - CI/O -3 -pF
Electrical Characteristics @25ºC: Detector Section
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XS170
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* Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC.
For guaranteed parameters not indicated in the written specifications, please contact our application department.
RELAY PERFORMANCE DATA*
Typical LED Forward Voltage Drop
(N=50, IF=5mA)
35
30
25
20
15
10
5
0
1.17 1.19 1.21 1.23 1.25
LED Forward Voltage Drop (V)
Device Count (N)
Typical IF for Switch Operation
(N=50, IL=100mADC)
0.50 0.62 0.750.44 0.56 0.69 0.81
LED Current (mA)
Device Count (N)
25
20
15
10
5
0
Typical IF for Switch Dropout
(N=50, IL=100mADC)
25
20
15
10
5
0
0.50 0.62 0.750.44 0.56 0.69 0.81
LED Current (mA)
Device Count (N)
Typical Turn-On Time
(N=50, IL=100mADC)
0.67 0.83 0.99 1.140.75 0.91 1.06
Turn-On Time (ms)
Device Count (N)
25
20
15
10
5
0
Typical Turn-Off Time
(N=50, IL=100mADC)
0.11 0.17 0.22 0.280.250.190.14
Turn-Off Time (ms)
Device Count (N)
25
20
15
10
5
0
Typical On-Resistance Distribution
(N=50, IL=100mADC)
25
20
15
10
5
0
29.09 30.63 32.16 33.7029.86 31.40 32.93
On-Resistance (:)
Device Count (N)
Typical Blocking Voltage Distribution
(N=50)
25
20
15
10
5
0
424.0 434.5 444.9 455.4429.3 439.7 450.1
Blocking Voltage (VP)
Device Count (N)
Typical LED Forward Voltage Drop
vs. Temperature
Temperature (ºC)
Forward Voltage (V)
1.8
1.6
1.4
1.2
1.0
0.8
-40 -20 0 20 40 60 80 120100
I
F
=50mA
I
F
=30mA
I
F
=20mA
I
F
=10mA
I
F
=5mA
Typical IF for Switch Dropout
vs. Temperature
(IF=100mADC)
Temperature (ºC)
LED Current (mA)
-40
6
5
4
3
2
1
0
-20 0 20 40 60 80 100 120
Typical IF for Switch Operation
vs. Temperature
(IL=100mADC)
Temperature (ºC)
LED Current (mA)
-40
6
5
4
3
2
1
0
-20 0 20 40 60 80 100 120
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XS170
RELAY PERFORMANCE DATA*
* Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC.
For guaranteed parameters not indicated in the written specifications, please contact our application department.
Maximum Load Current
vs. Temperature
Temperature (ºC)
Load Current (mA)
160
140
120
100
80
60
40
20
0
-40 -20 0 20 40 60 80 120100
IF=10mA
IF=5mA
IF=2mA
Typical Blocking Voltage
vs. Temperature
Temperature (ºC)
Blocking Voltage (VP)
-40
455
450
445
440
435
430
425
420
-20 0 20 40 60 80 100
Typical Leakage vs. Temperature
Measured across Pins 4&6
Temperature (ºC)
Leakage (PA)
-40
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
-20 0 20 40 60 80 100
Energy Rating Curve
Time
Load Current (A)
10Ps
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1ms100Ps 100ms 1s
10ms 10s 100s
Typical Load Current
vs. Load Voltage
(IF=5mA)
Load Voltage (V)
Load Current (mA)
120
100
80
60
40
20
0
-20
-40
-60
-80
-100
-120 -3-4 -2 -1 0 1 2 3 4
Typical Turn-Off Time
vs. LED Forward Current
(IL=120mADC)
LED Forward Current (mA)
Turn-Off Time (ms)
05 1015202530354045
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
50
Typical Turn-On Time
vs. LED Forward Current
(IL=100mADC)
LED Forward Current (mA)
Turn-On Time (ms)
05 1015202530354045
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
50
Typical On-Resistance
vs. Temperature
(IF=5mA, IL=100mADC)
Temperature (ºC)
On-Resistance (:)
-40
70
60
50
40
30
20
10
0
-20 0 20 40 60 80 100 120
Typical Turn-On Time
vs. Temperature
(IL=100mADC)
Temperature (ºC)
IF=5mA
IF=10mA
IF=20mA
Turn-On Time (ms)
-40
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-20 0 20 40 60 80 100 120
Typical Turn-Off Time
vs. Temperature
(IL=120mADC)
Temperature (ºC)
Turn-Off Time (ms)
-40
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
-20 0 20 40 60 80 100 120
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XS170
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Typical Normalized CTR
vs. Forward Current
(VCE=0.5V)
Forward Current (mA)
Normalized CTR (%)
024681012141618
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
020
Typical Normalized CTR
vs. Temperature
(VCE=0.5V)
Temperature (ºC)
Normalized CTR (%)
8
7
6
5
4
3
2
1
0-40 -20 0 20 40 60 80 120100
I
F
=1mA
I
F
=2mA
I
F
=5mA
I
F
=10mA
I
F
=15mA
I
F
=20mA
Typical Collector Current
vs. Forward Current
(VCE=0.5V)
Forward Current (mA)
Collector Current (mA)
02468 1210 14 16 18 20
12
10
8
6
4
2
0
DETECTOR PERFORMANCE DATA*
* Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC.
For guaranteed parameters not indicated in the written specifications, please contact our application department.
INTEGRATED CIRCUITS DIVISION
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XS170
Manufacturing Information
Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classifies its plastic encapsulated devices for moisture sensitivity according to the latest
version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We
test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our
devices when handled according to the limitations and information in that standard as well as to any limitations set
forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) classification as shown below, and should be handled
according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device Moisture Sensitivity Level (MSL) Classifi cation
XS170 / XS170S MSL 1
ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
Soldering Profile
Provided in the table below is the Classification Temperature (TC) of this product and the maximum dwell time the
body temperature of this device may be (TC - 5)ºC or greater. The classification temperature sets the Maximum Body
Temperature allowed for this device during lead-free reflow processes. For through-hole devices, and any other
processes, the guidelines of J-STD-020 must be observed.
Device Classifi cation Temperature (Tc) Dwell Time (tp) Max Refl ow Cycles
XS170 250ºC 30 seconds -
XS170S 250ºC 30 seconds 3
Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. Board washing to reduce or
remove flux residue following the solder reflow process is acceptable provided proper precautions are taken to
prevent damage to the device. These precautions include, but are not limited to: using a low pressure wash and
providing a follow up bake cycle sufficient to remove any moisture trapped within the device due to the washing
process. Due to the variability of the wash parameters used to clean the board, determination of the bake
temperature and duration necessary to remove the moisture trapped within the package is the responsibility of the
user (assembler). Cleaning or drying methods that employ ultrasonic energy may damage the device and should not
be used. Additionally, the device must not be exposed to flux or solvents that are Chlorine- or Fluorine-based.
INTEGRATED CIRCUITS DIVISION
XS170
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XS170
XS170S
Mechanical Dimensions
Dimensions
mm
(inches)
PCB Hole Pattern
2.540 ± 0.127
(0.100 ± 0.005)
6.350 ± 0.127
(0.250 ± 0.005)
9.144 ± 0.508
(0.360 ± 0.020)
0.457 ± 0.076
(0.018 ± 0.003)
9.652 ± 0.381
(0.380 ± 0.015)
7.239 TYP.
(0.285)
7.620 ± 0.254
(0.300 ± 0.010)
4.064 TYP
(0.160)
0.813 ± 0.102
(0.032 ± 0.004)
8-0.800 DIA.
(8-0.031 DIA.) 2.540 ± 0.127
(0.100 ± 0.005)
7.620 ± 0.127
(0.300 ± 0.005)
7.620 ± 0.127
(0.300 ± 0.005)
3.302 ± 0.051
(0.130 ± 0.002)
Pin 1
0.254 ± 0.0127
(0.010 ± 0.0005)
Dimensions
mm
(inches)
PCB Land Pattern
2.540 ± 0.127
(0.100 ± 0.005)
9.652 ± 0.381
(0.380 ± 0.015)
6.350 ± 0.127
(0.250 ± 0.005)
9.525 ± 0.254
(0.375 ± 0.010)
0.457 ± 0.076
(0.018 ± 0.003)
0.813 ± 0.102
(0.032 ± 0.004)
4.445 ± 0.127
(0.175 ± 0.005)
7.620 ± 0.254
(0.300 ± 0.010)
0.635 ± 0.127
(0.025 ± 0.005)
0.254 ± 0.0127
(0.010 ± 0.0005)
2.54
(0.10)
8.90
(0.3503)
1.65
(0.0649)
0.65
(0.0255)
3.302 ± 0.051
(0.130 ± 0.002)
Pin 1
INTEGRATED CIRCUITS DIVISION
Specification: DS-XS170-R04
©Copyright 2017, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
6/19/2017
For additional information please visit our website at: www.ixysic.com
8
XS170
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to
its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
XS170STR Tape & Reel
Dimensions
mm
(inches)
User Direction of Feed
NOTES:
1. Dimensions carry tolerances of EIA Standard 481-2
2. Tape complies with all “Notes” for constant dimensions listed on page 5 of EIA-481-2
Embossment
Embossed Carrier
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
330.2 DIA.
(13.00 DIA.)
K1
=4.20
(0.165)
0
K =4.90
(0.193)
P=12.00
(0.472)
W=16.00
(0.63)
Bo=10.30
(0.406)
Ao=10.30
(0.406)
