SIEMENS PNP Silicon Double Transistors @ To be used as a current mirror @ Good thermal coupling and Vee matching @ High current gain @ Low emitter-saturation voltage BCV 62 1 vPSO5178 Type Marking Ordering Code Pin Configuration Package") (tape and reel) BCV 62A 3Js Q62702-C2158 Gr(2) Gat) SOT-143 BCV 62B 3Ks Q62702-C2159 Lo BCV 62 C 3Ls Q62702-C2160 | 1(3) E2(4) EHADOOIS: Maximum Ratings Parameter Symbol Values Unit Collector-ernitter voltage Vceo 30 Vv (transistor T1) Collector-base voltage (open emitter} Veo 30 (transistor T1) Emitter-base voltage Veas 6 Collector current Ic 100 mA Collector peak current Tom 200 Base peak current (transistor T1) em 200 Total power dissipation, Ts = 99 "C) Prot 300 mw Junction temperature Th 150 C Storage temperature range Tag ~65...+ 150 Thermal Resistance Junction - ambient?) Rinsa < 240 KAV Junction - soldering point Rins < 170 1} For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv6 cm? Cu. 846 01.97 Semiconductor GroupSIEMENS BCV 62 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. OC characteristics for transistor T1 Collector-emitter breakdown voltage Ic=10mA, fp=0 30 - ~ Varyceo Collector-base breakdown voltage Ic=10yA, ls =0 Vieryceo | 30 _ - Emitter-base breakdown voltage fe = 10 pA, Ic =0 Veress | 6 - - Collector-base cutoff current Ves = 30 V, le = 0 Ves = 30 V, Je = 0, Ta = 150 C Ico DC current gain) Ic=0.1 MA, Vee =5 V Ic=2mA, Vee=5V BCV 62A BCV 62 B BCV 62 C Are 100 - 125 180 220 220 290 475 420 520 800 Collector-emitter saturation voltage) Ic= 10mA, /3=0.5 MA Ie = 100 mA, le =5 MA VeEsat - 75 300 - 250 650 mV Base-emitter saturation voltage") Ic= 10 MA, ic=0.5 mA Ic = 100 mA, ic =5 mA Veesat - 700 - Base-emitter voltage Io= 2MA, Vce=5V Ie=10mMA, vee=5V Vee 600 650 750 ~- - 820 1) Pulse test conditions: 1< 300 ys, D = 2%. Semiconductor Group 847SIEMENS BCV 62 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics for transistor T2 Base-emitter forward voltage Vees Vv le=10 pA 0.4 - _ Je = 250 mA - - 1.8 Matching of transistor T1 and transistor T2 at Jee = 0.5 mA and Veer = 5 V Ta= 25C Ior/ Ice | 0.7 - 1.3 Ta = 150C Teif Ice | 0.7 - 1.3 Thermal coupling of transistor T1 and Tez - 5 - mA transistor T2) Tt: Vee=5V Maximum current for thermal stability of Je: AC characteristics for transistor T1 Transition frequency f ~ 250 - MHz Ic = 10 mA, Vee = 5 V, f= 100 MHz Collector-base capacitance Cob - 3 - pF Vea = 10 V, fe = ic =0, f= 1 MHz Input capacitance Cro - 8 - Ves = 0.5 V, Io = ic = 0, f= 1 MHz Noise figure F - 2 - dB Ic = 200 pA, Vee = 5 V, Rs = 2 kO f= 1 kHz, B = 200 Hz Input impedance Aue - 4.5 _ kQ Ic =1mA, Voce = 10 V, f= 1 kHz Open-circuit reverse voltage transfer ratio hize - 2 - 10-4 Ic=1M/A, Vee = 10 V, f= 1 KHz Short-circuit forward current transfer ratio hare 100 - 900 - Ic=1mA, Vee = 10 V, f= 1 kHz Open-circuit output admittance hee - 30 - pS Ie =1MA, Voe= 10 V, f= 1 kHz 1) Without emitter resistor. Device mounted on alumina 15 mm x 16.5 mm x 0.7 mm. Semiconductor Group 848SIEMENS BCV 62 Test circuit for current matching gq =constant Yoo Yoo Srno00s Note: Voltage drop at contacts: Vco < Vr=16 mV Characteristic for determination of Vce: at specified Re range with Je2 as parameter under condition of Ic: / Ie2 = 1.3 fer f~ Yee Tg =eonstant Note: BCV 62 with emitter resistors Semiconductor Group 849SIEMENS BCV 62 Total power dissipation Pio = f (Ta*; Ts) * Package mounted on epoxy RCV 62 EHPOOSS9 400 mi P tot 300 200 a a 100 \ 0 50 100 c) = 150 Wh Semiconductor Group Permissible pulse load Pret mex/Pia pe = f (tp) te 4 y ee mui) lm Su CET CSS TTT aN 10F yo? 10 103 107% ~s 10 ~ f, o 850