Ultrafast Rectifier 30 A, 600 V RURG3060CC-F085 Description The RURG3060-F085 is an dual ultrafast diode with soft recovery characteristics (trr < 80 ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. www.onsemi.com CATHODE (BOTTOM SIDE METAL) ANODE 1 CATHODE ANODE 2 Features * * * * * High Speed Switching (trr = 60 ns (Typ.) @ IF = 30 A) Low Forward Voltage (VF = 1.5 V (Max) @ IF = 30 A) Avalanche Energy Rated AEC-Q101Qualified and PPAP Capable This is a Pb-Free Device TO-247-3LD CASE 340CK K Applications * * * * Automotive DC/DC Converter Automotive On Board Charger Switching Power Supply Power Switching Circuits A1 A2 MARKING DIAGRAM $Y&Z&3&K RURG3060C $Y &Z &3 &K RURG3060C = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2013 February, 2020 - Rev. 4 1 Publication Order Number: RURG3060CC-F085/D RURG3060CC-F085 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Ratings Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current (TC = 25C) IF(AV) 30 A Non-repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) IFSM 90 A Avalanche Energy (1 A, 40 mH) EAVL 20 mJ TJ, TSTG -55 to +175 C Parameter DC Blocking Voltage Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Tube Quantity RURG3060CC-F085 RURG3060C TO-247 - 30 THERMAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol Max Unit Maximum Thermal Resistance, Junction to Case (Single Anode) RqJC 1 C/W Maximum Thermal Resistance, Junction to Ambient RqJA 45 C/W Unit ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol Instantaneous Reverse Current IR Instantaneous Forward Voltage Reverse Recovery Time Reverse Recovery Time Avalanche Energy VR = 600 V Min Typ Max TC = 25C - - 250 mA TC = 175C - - 1.0 mA TC = 25C - 1.26 1.5 V TC = 175C - 1.06 1.3 V VFM (Note 1) IF = 30 A trr (Note 2) IF = 1 A, di/dt = 100 A/ms, VCC = 390 V TC = 25C - 35 55 ns IF = 30 A, di/dt = 100 A/ms, VCC = 390 V TC = 25C - 60 80 ns TC = 175C - 231 - ns IF = 30 A, di/dt = 100 A/ms, VCC = 390 V TC = 25C - 31 - ns - 29 - ns - 92 - nC 20 - - mJ ta tb Reverse Recovery Charge Conditions Qrr EAVL IAV = 1.0 A, L = 40 mH Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Test Pulse Width = 300 ms, Duty Cycle = 3% 2. Guaranteed by design. www.onsemi.com 2 RURG3060CC-F085 TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 Control IF L DUT RG VGE CURRENT SENSE + - IGBT t1 IF VDD dIF dt trr ta 0 tb 0.25 IRM IRM t2 Figure 2. trr Waveforms and Definitions Figure 1. trr Test Circuit IMAX = 1 A L = 40 mH R < 0.1 W EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL) VAVL L R CURRENT SENSE + VDD DUT VDD - IL IL I V Q1 t0 t1 t2 Figure 4. Avalanche Current and Voltage Waveforms Figure 3. Avalanche Energy Test Circuit www.onsemi.com 3 t RURG3060CC-F085 400 1000 100 100 Reverse Current, IR [mA] Forward Current, IF [A] TYPICAL PERFORMANCE CHARACTERISTICS (Single Anode) TC = 175C 10 TC = 125C 1 TC = 25C 0.1 0.1 0.5 1.0 TC = 125C 10 1 0.1 0.01 TC = 25C 1E-3 1E-4 2.0 1.5 TC = 175C 0 100 200 Forward Voltage, VF [V] Reverse Recovery Time trr [ns] Capacitance, Cj [pF] 250 Typical Capacitance at 10 V = 103 pF 300 200 100 0.1 1 10 Reverse Voltage, VR [V] Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] 20 15 0 100 TC = 125C 200 300 di/dt [A/ms] IF = 30 A 400 TC = 125C 100 50 TC = 25C 200 300 400 500 Figure 8. Typical Reverse Recovery Time vs. di/dt TC = 175C TC = 25C 150 di/dt [A/ms] 30 5 600 TC = 175C 0 100 35 10 500 IF = 30 A 200 100 Figure 7. Typical Junction Capacitance 25 400 Figure 6. Typical Reverse Current vs. Reverse Voltage Figure 5. Typical Forward Voltage Drop vs. Forward Current 400 300 Reverse Voltage, VR [V] 500 40 30 20 10 0 25 50 75 100 125 150 175 Case Temperature, TC [C] Figure 10. Forward Current Derating Curve Figure 9. Typical Reverse Recovery Current vs. di/dt www.onsemi.com 4 RURG3060CC-F085 Reverse Recovery Charge, Qrr [nC] TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2500 IF = 30 A TC = 175C 2000 1500 TC = 125C 1000 TC = 25C 500 0 100 200 300 di/dt [A/ms] 400 500 Figure 11. Reverse Recovery Charge 2 ZqJC(t), Thermal Response 1 D = 0.5 PDM t1 0.2 0.1 0.1 0.05 *Notes: 1. ZqJC(t) = 1.0C/W Typ. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZqJC(t) 0.02 0.01 Single Pulse 0.001 10-5 t2 10-4 10-3 10-2 10-1 100 t1, Square Wave Pulse Duration [sec] Figure 12. Transient Thermal Response Curve www.onsemi.com 5 101 102 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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