© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 17
Publication Order Number:
MMUN2211LT1/D
MMUN2211LT1G Series,
SMMUN2211LT1G Series,
NSVMMUN2232LT1G
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT−23 package which is designed for low power surface mount
applications.
Features
•Simplifies Circuit Design
•Reduces Board Space and Component Count
•S, NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Base Voltage VCBO 50 Vdc
Collector−Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD246 (Note 1)
400 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
°C/W
Thermal Resistance, Junction−to−
Ambient
RqJA 508 (Note 1)
311 (Note 2)
°C/W
Thermal Resistance, Junction−to−Lead RqJL 174 (Note 1)
208 (Note 2)
°C/W
Junction and Storage Temperature
Range
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad
2. FR−4 @ 1.0 x 1.0 inch pad
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 18 of this data sheet.
ORDERING INFORMATION
A8x M G
G
1
A8x = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter−Base Cutoff Current MMUN2211LT1G, SMMUN2211LT1G
(VEB = 6.0 V, IC = 0) MMUN2212LT1G
MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G
MMUN2214LT1G, SMMUN2214LT1G
MMUN2215LT1G, SMMUN2215LT1G
MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G
MMUN2217LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G, NSVMMUN2232LT1G
MMUN2233LT1G, SMMUN2233LT1G
MMUN2234LT1G, SMMUN2234LT1G
MMUN2238LT1G, SMMUN2238LT1G
IEBO −
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
0.5
4.3
2.3
1.5
0.18
0.13
4.0
mAdc
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc
Collector−Emitter Breakdown Voltage (Note 3), (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain MMUN2211LT1G, SMMUN2211LT1G
(VCE = 10 V, IC = 5.0 mA) MMUN2212LT1G
MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G
MMUN2214LT1G, SMMUN2214LT1G
MMUN2215LT1G, SMMUN2215LT1G
MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G
MMUN2217LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G, NSVMMUN2232LT1G
MMUN2233LT1G, SMMUN2233LT1G
MMUN2234LT1G, SMMUN2234LT1G
MMUN2238LT1G, SMMUN2238LT1G
hFE 35
60
80
80
160
160
35
3.0
8.0
15
80
80
160
60
100
140
140
350
350
60
5.0
15
30
200
150
350
−
−
−
−
−
−
−
−
−
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA) MMUN2211LT1G, SMMUN2211LT1G
MMUN2212LT1G
MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G
MMUN2214LT1G, SMMUN2214LT1G
MMUN2234LT1G, SMMUN2234LT1G
(IC = 10 mA, IB = 1 mA) MMUN2215LT1G, SMMUN2215LT1G
MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G
MMUN2217LT1G
MMUN2232LT1G, NSVMMUN2232LT1G
MMUN2233LT1G, SMMUN2233LT1G
MMUN2238LT1G, SMMUN2238LT1G
(IC = 10 mA, IB = 5 mA) MMUN2230LT1G
MMUN2231LT1G
VCE(sat)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 4)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MMUN2211LT1G, SMMUN2211LT1G
MMUN2212LT1G
MMUN2214LT1G, SMMUN2214LT1G
MMUN2215LT1G, SMMUN2215LT1G
MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G
MMUN2217LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G, NSVMMUN2232LT1G
MMUN2233LT1G, SMMUN2233LT1G
MMUN2234LT1G, SMMUN2234LT1G
MMUN2238LT1G, SMMUN2238LT1G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW)
VOL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
MMUN2211LT1G, SMMUN2211LT1G
MMUN2212LT1G
MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G
MMUN2214LT1G, SMMUN2214LT1G
MMUN2217LT1G
MMUN2233LT1G, SMMUN2233LT1G
(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kW) MMUN2230LT1G
MMUN2234LT1G, SMMUN2234LT1G
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MMUN2215LT1G, SMMUN2215LT1G
MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G
MMUN2231LT1G
MMUN2232LT1G, NSVMMUN2232LT1G
MMUN2238LT1G, SMMUN2238LT1G
VOH
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
Input Resistor MMUN2211LT1G, SMMUN2211LT1G
MMUN2212LT1G
MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G
MMUN2214LT1G, SMMUN2214LT1G
MMUN2215LT1G, SMMUN2215LT1G
MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G
MMUN2217LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G, NSVMMUN2232LT1G
MMUN2233LT1G, SMMUN2233LT1G
MMUN2234LT1G, SMMUN2234LT1G
MMUN2238LT1G, SMMUN2238LT1G
R1 7.0
15.4
32.9
7.0
7.0
3.3
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
6.1
1.3
2.9
6.1
6.1
28.6
2.88
kW
Resistor Ratio MMUN2211LT1G, SMMUN2211LT1G
MMUN2212LT1G
MMUN2213LT1G, SMMUN2213LT1G, SMMUN2213LT3G
MMUN2214LT1G, SMMUN2214LT1G
MMUN2215LT1G, SMMUN2215LT1G
MMUN2216LT1G, SMMUN2216LT1G, SMMUN2216LT3G
MMUN2217LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G, NSVMMUN2232LT1G
MMUN2233LT1G, SMMUN2233LT1G
MMUN2234LT1G, SMMUN2234LT1G
MMUN2238LT1G, SMMUN2238LT1G
R1/R2 0.8
0.8
0.8
0.17
−
−
0.38
0.8
0.8
0.8
0.055
0.38
−
1.0
1.0
1.0
0.21
−
−
0.47
1.0
1.0
1.0
0.1
0.47
−
1.2
1.2
1.2
0.25
−
−
0.56
1.2
1.2
1.2
0.185
0.56
−
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2211LT1G, SMMUN2211LT1G
100
10
1
0.1
0.01
0.001 0123 4
Vin, INPUT VOLTAGE (VOLTS)
5678910
VO = 5 V
IC, COLLECTOR CURRENT (mA)
TA = −25°C
75°C
25°C
1000
100
101 10 100
IC, COLLECTOR CURRENT (mA)
50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
VCE = 10 V
Figure 1. Derating Curve
250
200
150
100
50
0
−50 0 50 100 150
TA, AMBIENT TEMPERATURE (5°C)
Figure 2. VCE(sat) vs. IC
PD, POWER DISSIPATION (MILLIWATTS)
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
RqJA= 625°C/W
TA = 75°C
−25°C
25°C
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1 40 50
Figure 3. DC Current Gain
Vin, INPUT VOLTAGE (V)
TA = −25°C
75°C
25°C
VO = 0.2 V
1
0.1
0.01
0.001 02040608
0
IC, COLLECTOR CURRENT (mA)
IC/IB = 10
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
TA = −25°C
75°C
25°C
Figure 4. Output Capcitance
Figure 5. Output Current vs. Input Voltage Figure 6. Input Voltage vs. Output Current
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2212LT1G
Figure 7. VCE(sat) vs. IC
0.001
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 6080
IC/IB = 10
−
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
TA = −25°C
25°C
75°C
Figure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1 100
VCE = 10 V
hFE, DC CURRENT GAIN (NORMALIZED)
TA = 75°C
25°C−25°C
Cob, CAPACITANCE (pF)
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246810
0
IC, COLLECTOR CURRENT (mA)
100
10
1
0.1 10 20 30 40 50
Figure 11. Input Voltage vs. Output Current
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
VO = 5 V
VO = 0.2 V
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (V)
TA = −25°C
75°C 25°C
TA = −25°C
75°C25°C
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2213LT1G, SMMUN2213LT1G Series
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
Figure 12. VCE(sat) vs. IC
0 204060 80
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
IC/IB = 10 TA = −25°C
75°C
25°C
Figure 13. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
101 100
VCE = 10 V
hFE, DC CURRENT GAIN (NORMALIZED)
TA = 75°C
−25°C
25°C
Figure 14. Output Capacitance
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
Cob, CAPACITANCE (pF)
024681
0
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current vs. Input Voltage
VO = 5 V
IC, COLLECTOR CURRENT (mA)
TA = −25°C
75°C25°C
TA = −25°C
75°C25°C
100
10
1
0.1
010 203040 50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
75°C
TA = −25°C
25°C
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
7
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2214LT1G, SMMUN2214LT1G
Figure 17. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
0 20406080
1
0.1
0.01
0.001
IC/IB = 10
TA = −25°C
25°C
75°C
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
VCE = 10
300
250
200
150
100
50
02 4 6 8 15 20 40 50 60 70 80 90
hFE, DC CURRENT GAIN (NORMALIZED)
25°C
TA = 75°C
−25°C
4
3.5
3
2.5
2
1.5
1
0.5
0024681015
20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
f = 1 MHz
lE = 0 A
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
10
10246810
Figure 20. Output Current vs. Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
VO = 5 V
TA = −25°C
75°C 25°C
10
1
0.1 01020304050
Figure 21. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
TA = −25°C
75°C
25°C
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
8
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2215LT1G, SMMUN2215LT1G
75°C
25°C
−25°C
Figure 22. VCE(sat) versus ICFigure 23. DC Current Gain
Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 26. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
0.01
0.1
30
VR, REVERSE BIAS VOLTAGE (VOLTS)
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
3525155
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
9
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2216LT1G, SMMUN2216LT1G Series
75°C
25°C
−25°C
Figure 27. VCE(sat) versus ICFigure 28. DC Current Gain
Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 31. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
0.01
0.1
30
VR, REVERSE BIAS VOLTAGE (VOLTS)
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
3525155
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
10
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2217LT1G
−25°C
75°C
25°C
−25°C
Figure 32. VCE(sat) versus ICFigure 33. DC Current Gain
Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 36. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
100
10
0.01
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
4.0
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1.0
2.0
100
3210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
4
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
−25°C
75°C
25°C
−25°C
75°C25°C
3525155
0.01
0.1
30
3.5
3.0
2.5
f = 1 MHz
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 V
VCE = 10 V
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
11
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2230LT1G
75°C
25°C
−25°C
Figure 37. VCE(sat) versus ICFigure 38. DC Current Gain
Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 41. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE = 10 V
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
12
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2231LT1G
75°C
25°C
−25°C
Figure 42. VCE(sat) versus ICFigure 43. DC Current Gain
Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 46. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE = 10 V
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
13
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2232LT1G, NSVMMUN2232LT1G
TA = 75°C
IC/IB =10
12
1
0.1
0.001
168420
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (V)
0.01
24 28
−25°C25°C
Figure 47. VCE(sat) vs. ICFigure 48. DC Current Gain
VCE = 10 V
0
1000
100
25 50
10
100
1
75
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
TA = 75°C
−25°C25°C
125
Figure 49. Output Capacitance Figure 50. Output Current vs. Input Voltage
f = 1 MHz
IE = 0 A
TA = 25°C
0
100
10
246
1
0.1
0.01
80
4
3
20
2
1
0
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
10 60504030
5
6
VO = 5 V
75°C
TA = −25°C
25°C
Figure 51. Input Voltage vs. Output Current
VO = 0.2 V
0
10
10 20 30
1
0.1
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (V)
TA = −25°C
75°C
25°C
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
14
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2233LT1G, SMMUN2233LT1G
75°C
TA = −25°C
Figure 52. VCE(sat) vs. IC
25°C
IC/IB = 10
12
1
0.1
0.001
177222
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (V)
0.01
27 32
Figure 53. DC Current Gain
VCE = 10 V
1
1000
100
10
1
10
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
TA = −25°C
100
75°C
25°C
Figure 54. Output Capacitance
f = 1 MHz
IE = 0 A
TA = 25°C
0
0.5
3
20
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
10 60504030
3.5
4
1.5
2.5
Figure 55. Output Current vs. Input Voltage
0
100
10
28
1
0.1
0.01
46
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
VO = 5 V
TA = −25°C
75°C
25°C
Figure 56. Input Voltage vs. Output Current
VO = 0.2 V
0
10
12 18 30
1
0.1
IC, COLLECTOR CURRENT (mA)
TA = −25°C
624
75°C
25°C
Vin, INPUT VOLTAGE (V)
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
15
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2234LT1G, SMMUN2234LT1G
75°C
25°C
−25°C
Figure 57. VCE
(
sat
)
versus ICFigure 58. DC Current Gain
IC, COLLECTOR CURRENT (mA)
1
0.1
302515100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
75°C
25°C
TA = −25°C
0.01
20
100
5
IC/IB = 10 VCE = 10 V
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
16
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2238LT1G, SMMUN2238LT1G
75°C
TA = −25°C
Figure 59. VCE(sat) vs. IC
25°C
IC/IB = 10
40
1
0.1
0.001
6020080
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (V)
0.01
100
Figure 60. DC Current Gain
VCE = 10 V
1
1000
100
10
1
10
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
TA = −25°C
100
75°C
25°C
Figure 61. Output Capacitance
f = 1 Mhz
TA = 25°C
0
0.5
3
20
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
10 504030
3.5
4
1.5
2.5
Figure 62. Output Current vs. Input Voltage
0
100
10
14
1
0.1
0.01
23
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
VO = 5 V
TA = −25°C
75°C
25°C
Figure 63. Input Voltage vs. Output Current
VO = 0.2 V
0
10
20 30 50
1
0.1
IC, COLLECTOR CURRENT (mA)
TA = −25°C
10 40
75°C
25°C
Vin, INPUT VOLTAGE (V)
5
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
17
TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 64. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
VCC
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
+12 V
Figure 65. Open Collector Inverter: Inverts
the Input Signal
Figure 66. Inexpensive, Unregulated
Current Source
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
18
ORDERING INFORMATION
Device Marking R1(k) R2(k) Package Shipping†
MMUN2211LT1G
A8A
10 10 SOT−23
(Pb−Free)
3000 / Tape & Reel
MMUN2211LT3G 10 10 10,000 / Tape & Reel
MMUN2212LT1G A8B 22 22 SOT−23
(Pb−Free)
3000 / Tape & Reel
MMUN2213LT1G A8C 47 47 SOT−23
(Pb−Free)
MMUN2214LT1G A8D 10 47 SOT−23
(Pb−Free)
MMUN2215LT1G A8E 10 ∞SOT−23
(Pb−Free)
MMUN2216LT1G A8F 4.7 ∞SOT−23
(Pb−Free)
MMUN2217LT1G AAM 4.7 10 SOT−23
(Pb−Free)
MMUN2230LT1G A8G 1.0 1.0 SOT−23
(Pb−Free)
MMUN2231LT1G A8H 2.2 2.2 SOT−23
(Pb−Free)
MMUN2232LT1G A8J 4.7 4.7 SOT−23
(Pb−Free)
MMUN2233LT1G A8K 4.7 47 SOT−23
(Pb−Free)
MMUN2234LT1G
A8L
22 47 SOT−23
(Pb−Free)
MMUN2234LT3G 22 47 SOT−23
(Pb−Free) 10,000 / Tape & Reel
MMUN2238LT1G A8R 2.2 ∞SOT−23
(Pb−Free) 3000 / Tape & Reel
SMMUN2211LT1G
A8A
10 10 SOT−23
(Pb−Free)
3000 / Tape & Reel
SMMUN2211LT3G 10 10 10,000 / Tape & Reel
SMMUN2213LT1G A8C 47 47 SOT−23
(Pb−Free)
3000 / Tape & Reel
SMMUN2213LT3G A8C 47 47 10,000 / Tape & Reel
SMMUN2214LT1G A8D 10 47 SOT−23
(Pb−Free) 3000 / Tape & Reel
SMMUN2215LT1G A8E 10 ∞SOT−23
(Pb−Free) 3000 / Tape & Reel
SMMUN2216LT1G
A8F
4.7 ∞SOT−23
(Pb−Free)
3000 / Tape & Reel
SMMUN2216LT3G 4.7 ∞10,000 / Tape & Reel
SMMUN2233LT1G A8K 4.7 4.7 SOT−23
(Pb−Free) 3000 / Tape & Reel
SMMUN2234LT1G A8L 22 47 SOT−23
(Pb−Free) 3000 / Tape & Reel
SMMUN2238LT1G A8R 2.2 ∞SOT−23
(Pb−Free) 3000 / Tape & Reel
NSVMMUN2232LT1G A8J 4.7 4.7 SOT−23
(Pb−Free) 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G
http://onsemi.com
19
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MMUN2211LT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
