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0202
IXYS reserves the right to change limits, test conditions and dimensions.
VRRM = 600 V
ID(AV)M = 11 A
Cjunction = 21 pF
Silicon Carbide
Schottky
Rectifier Bridg e
in ISOPLUS i4-PACTM
1
5
Advanced Technical Information
FBS 16-06SC
Features
• Silicon Carbide Schottky Diodes
- no reverse recovery at turn off - only
charge of junction capacity - soft turn
off waveform
- no forward recovery at turn on
- switching behaviour independent of
temperature
- low leakage current
• ISOPLUS i4-PAC(TM) package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
• output rectifiers of high end switched
mode power supplies
• other high frequency rectifiers
Rectifier Bridge
Symbol Conditions Maximum Ratings
VRRM 600 V
IFAV TC = 90°C; sine 180° (per diode) 5 A
ID(AV)M TC = 90°C 11 A
IFSM TVJ = 25°C; t = 10 ms; sine 50 Hz 20 A
Ptot TC = 25°C (per diode) 27 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VFIF = 6 A; TVJ = 25°C 1.5 1.8 V
TVJ = 125°C 1.6 V
IRVR = VRRM;T
VJ = 25°C 0.2 mA
TVJ = 125°C 0.05 mA
CJVR = 400 V; TVJ = 125°C 21 pF
RthJC (per diode) 5.6 K/W
RthJS 8.6 K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
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