For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
8 - 20
HMC311ST89 / 311ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
v03.0710
General Description
Features
Functional Diagram
The HMC311ST89(E) is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) Gain Block MMIC SMT
DC to 6 GHz ampli er. Packaged in an industry
standard SOT89, the ampli er can be used as either
a cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +16.5 dBm output power. The
HMC311ST89(E) offers 16 dB of gain and an output
IP3 of +31.5 dBm while requiring only 54 mA from a
+5V supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components.
P1dB Output Power: +15.5 dBm
Output IP3: +31.5 dBm
Gain: 16 dB
50 Ohm I/O’s
Industry Standard SOT89 Package
Included in the HMC-DK001 Designer’s Kit
Typical Applications
The HMC311ST89(E) is ideal for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio
Electrical Speci cations, Vs= 5V, Rbias= 22 Ohm, TA = +25° C
Parameter Min. Typ. Max. Units
Gain
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
14.0
13.0
12.5
16.0
15.0
14.5
dB
dB
dB
Gain Variation Over Temperature
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
0.004
0.007
0.012
0.007
0.012
0.016
dB/ °C
dB/ °C
dB/ °C
Return Loss Input / Output
DC - 2.0 GHz
2.0 - 5.0 GHz
5.0 - 6.0 GHz
8
7
8
dB
dB
dB
Reverse Isolation DC - 6 GHz 20 dB
Output Power for 1 dB Compression (P1dB)
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
13.5
12.0
10.0
15.5
15.0
13.0
dBm
dBm
dBm
Output Third Order Intercept (IP3)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
31.5
30
27
24
dBm
dBm
dBm
dBm
Noise Figure DC - 4 GHz
4.0 - 6.0 GHz
4.5
5dB
Supply Current (Icq) 55 74 mA
Note: Data taken with broadband bias tee on device output.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
8 - 21
Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
0123456789
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
4
6
8
10
12
14
16
18
20
012345678
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
012345678
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
012345678
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
012345678
+25 C
+85 C
-40 C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12345678
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC311ST89 / 311ST89E
v03.0710 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
8 - 22
Power Compression @ 6 GHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Power Compression @ 1 GHz
Gain, Power, OIP3 & Supply Current vs.
Supply Voltage @ 1 GHz
4
6
8
10
12
14
16
18
012345678
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
4
6
8
10
12
14
16
18
012345678
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
-4
-2
0
2
4
6
8
10
12
14
16
18
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-4
-2
0
2
4
6
8
10
12
14
16
18
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
10
14
18
22
26
30
34
012345678
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
10
20
30
40
50
60
70
80
4.5 4.75 5 5.25 5.5
Gain
P1dB
Psat
IP3
Icq
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Icq (mA)
Vs (Vdc)
HMC311ST89 / 311ST89E
v03.0710 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
8 - 23
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +7V
RF Input Power (RFIN)(Vcc = +3.9V) +10 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C) 0.34 W
Thermal Resistance
(junction to lead) 191 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC311ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H311
XXXX
HMC311ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H311
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC311ST89 / 311ST89E
v03.0710 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
8 - 24
Application Circuit
Pin Descriptions
Pin Number Function Description Interface Schematic
1RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3RFOUT RF output and DC Bias for the output stage.
2, 4 GND These pins and package bottom must be connected to RF/
DC ground.
Recommended Component Values
Component
Frequency (MHz)
50 900 1900 2200 2400 3500 5200 5800
L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 3.3 nH 3.3 nH
C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias
> 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.8
Rbias
HMC311ST89 / 311ST89E
v03.0710 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
8 - 25
Evaluation PCB
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 108313 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J4 DC Pin
C1, C2 Capacitor, 0402 Pkg.
C3 100 pF Capacitor, 0402 Pkg.
C4 1000 pF Capacitor, 0603 Pkg.
C5 2.2 μF Capacitor, Tantalum
R1 Resistor, 0805 Pkg.
L1 Inductor, 0603 Pkg.
U1 HMC311ST89(E)
PCB [2] 107368 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC311ST89 / 311ST89E
v03.0710 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
