© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 150 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 150 V
VGSS Continuous ±15 V
VGSM Transient ±25 V
ID25 TC= 25°C - 44 A
IDM TC= 25°C, Pulse Width Limited by TJM -130 A
IATC= 25°C - 22 A
EAS TC= 25°C1J
PDTC= 25°C 298 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220, TO-247 & TO-3P) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
DS100023A(11/10)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA -150 V
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V
IGSS VGS = ±15V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V - 15 μA
TJ = 125°C - 750 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 65 mΩ
TrenchPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTA44P15T
IXTP44P15T
IXTQ44P15T
IXTH44P15T
VDSS = - 150V
ID25 = - 44A
RDS(on) ≤≤
≤≤
≤ 65mΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
z Avalanche Rated
zExtended FBSOA
zFast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switching
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
zBattery Charger Applications
GDS
TO-220AB (IXTP)
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
S
DD (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-3P (IXTQ)
D
G
S
Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 27 45 S
Ciss 13.4 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 675 pF
Crss 183 pF
td(on) 25 ns
tr 42 ns
td(off) 50 ns
tf 17 ns
Qg(on) 175 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 65 nC
Qgd 58 nC
RthJC 0.42 °C/W
RthCS (TO-220) 0.50 °C/W
(TO-247 & TO-3P) 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 44 A
ISM Repetitive, Pulse Width Limited by TJM -176 A
VSD IF = IS, VGS = 0V, Note 1 -1.3 V
trr 140 ns
QRM 0.87 μC
IRM -12.4 A
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
IF = - 22A, -di/dt = -100A/μs
VR = - 75V, VGS = 0V
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
TO-263 Outline
TO-3P Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
TO-247 Outline
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
1 = Gate
2 = Drain
3 = Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-44
-36
-28
-20
-12
-4
-2.8-2.4-2-1.6-1.2-0.8-0.40
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 8V
- 7V
- 5
V
- 6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-30-25-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 5
V
- 6
V
- 7
V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
-44
-36
-28
-20
-12
-4
-5-4.5-4-3.5-3-2.5-2-1.5-1-0.50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 8V
- 7V
- 6V
- 5V
Fig. 4. R
DS(on)
Normalized to I
D
= - 22A vs.
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 44A
I
D
= -22A
Fig. 5. R
DS(on)
Normalized to I
D
= - 22A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-140-120-100-80-60-40-200
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 6. Maxi mu m Dr ai n C urr en t vs.
Case Temp er atu r e
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fig. 7. Input Admittance
-50
-40
-30
-20
-10
0
-6.0-5.5-5.0-4.5-4.0-3.5-3.0
VGS - Volts
ID - Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
-50-45-40-35-30-25-20-15-10-50
ID - Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-140
-120
-100
-80
-60
-40
-20
0
-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4
VSD - Volts
IS - Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 20 40 60 80 100 120 140 160 180
QG - NanoCoulombs
VGS - Volts
V
DS
= - 75V
I
D
= - 22A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
VDS - Volts
Capacitance - PicoFarads
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1101001000
VDS - Volts
ID - Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
-
---
-
100ms
-
-
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fi g. 14. Resistive Tur n - o n Ri s e Time vs.
Drain Current
20
24
28
32
36
40
44
48
-44-42-40-38-36-34-32-30-28-26-24-22
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 75V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 15. R esi sti ve Tu r n -o n Swi tch i n g Times vs
. Gate R esi stan ce
0
50
100
150
200
250
0 2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
0
20
40
60
80
100
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 75V
I
D
= - 44A, - 22A
Fi g . 16. Resisti ve Tu r n -o ff Swi tch i n g Ti mes vs.
Junction Temperature
15
16
17
18
19
20
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
45
50
55
60
65
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 75V
I
D
= - 22A
I
D
= - 44A
Fi g . 17. R es i sti ve Tur n - o ff Swi tching Times vs.
Dr ai n C ur r en t
40
45
50
55
60
65
-44-42-40-38-36-34-32-30-28-26-24-22
I
D
- Amperes
t
f
- Nanoseconds
14
15
16
17
18
19
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 75V
T
J
= 25ºC
T
J
= 125ºC
T
J
= 125ºC
T
J
= 25ºC
Fi g. 13. Resistive Tur n - o n Ri s e Time vs.
Jun ct i on Temp er ature
18
22
26
30
34
38
42
46
50
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 75V
I
D
= - 22A
I
D
= - 44A
Fi g . 18. R e si sti ve Tur n - o ff Swi tching Times vs.
Gate Resi stan ce
0
20
40
60
80
100
120
140
160
180
02468101214161820
R
G
- Ohms
t
f
- Nanoseconds
30
60
90
120
150
180
210
240
270
300
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 75V
I
D
= - 22A
I
D
= - 44A
© 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_44P15T(A6)11-05-10-A
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fig. 19. Maximum T ransient T herm al Im pedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
