PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
22 February 2018 Product data sheet
1. General description
Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package.
PNP complement: PBSS3540M.
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to reduced heat generation
Reduced printed-circuit board requirements.
AEC-Q101 qualified
3. Applications
Power management:
DC-DC converter
Supply line switching
Battery charger
LCD backlighting.
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs).
Inductive load drivers (e.g. relays, buzzers and motors).
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter
voltage
open base - - 40 V
ICcollector current [1] [2] - - 500 mA
ICM peak collector current single pulse; tp ≤ 1 ms - - 1 A
hFE DC current gain VCE = 2 V; IC = 10 mA; Tamb = 25 °C 200 - -
RCEsat collector-emitter
saturation resistance
IC = 500 mA; IB = 50 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02 ; Tamb = 25 °C
- 380 500
[1] Device mounted on an FR4 Printed-Circuit Board, (PCB), single-sided copper, tinplated, standard footprint, with 60 μm copper strip
line.
[2] Refer to SOT883 standard mounting conditions.
Nexperia PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 B base
2 E emitter
3 C collector
3
1
2
Transparent
top view
DFN1006-3 (SOT883) sym123
C
E
B
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBSS2540M DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883
7. Marking
Table 4. Marking codes
Type number Marking code
PBSS2540M DC
PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 22 February 2018 2 / 10
Nexperia PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base - 40 V
VEBO emitter-base voltage open collector - 6 V
ICcollector current [1] [2] - 500 mA
ICM peak collector current - 1 A
IBM peak base current
single pulse; tp ≤ 1 ms
- 100 mA
[1] [2] - 250 mWPtot total power dissipation Tamb ≤ 25 °C
[2] [3] - 430 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature -65 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board, (PCB), single-sided copper, tinplated, standard footprint, with 60 μm copper strip
line.
[2] Refer to SOT883 standard mounting conditions.
[3] Device mounted on an FR4 PCB, single-sided copper, tinplated, mounting pad for collector 1 cm2.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] [2] - - 500 K/WRth(j-a) thermal resistance
from junction to
ambient
in free air
[2] [3]
[4]
- - 290 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint, with 60 μm copper strip line.
[2] Refer to SOT883 standard mounting conditions.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4] Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 22 February 2018 3 / 10
Nexperia PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VCB = 30 V; IE = 0 A; Tamb = 25 °C - - 100 nAICBO collector-base cut-off
current VCB = 30 V; IE = 0 A; Tj = 150 °C - - 50 µA
IEBO emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA
VCE = 2 V; IC = 10 mA; Tamb = 25 °C 200 - -
VCE = 2 V; IC = 100 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02 ; Tamb = 25 °C
150 - -
hFE DC current gain
VCE = 2 V; IC = 500 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02 ; Tamb = 25 °C
50 - -
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C - - 50 mV
IC = 100 mA; IB = 5 mA; Tamb = 25 °C - - 100 mV
IC = 200 mA; IB = 10 mA; Tamb = 25 °C - - 200 mV
VCEsat collector-emitter
saturation voltage
- - 250 mV
RCEsat collector-emitter
saturation resistance
- 380 500
VBEsat base-emitter saturation
voltage
IC = 500 mA; IB = 50 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02 ; Tamb = 25 °C
- - 1.2 V
VBEon base-emitter turn-on
voltage
VCE = 2 V; IC = 100 mA; Tamb = 25 °C - - 1.1 V
fTtransition frequency VCE = 5 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
250 450 - MHz
Cccollector capacitance VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
- - 6 pF
PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 22 February 2018 4 / 10
Nexperia PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
0
400
800
1200
200
600
1000
mhc082
10- 1 1
hFE
10 IC (mA)
102103
(1)
(2)
(3)
VCE = 2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 1. DC current gain as a function of collector
current; typical values
200
1200
400
600
800
1000
mhc085
10- 1 1 10
VBE
(mV)
IC (mA)
102103
(1)
(2)
(3)
VCE = 2 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 2. Base-emitter voltage as a function of collector
current; typical values
103
102
10
mhc086
10- 1 1 10
VCEsat
(mV)
IC (mA)
102103
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 3. Collector-emitter saturation voltage as a
function of collector current; typical values
200
1200
400
600
800
1000
mhc084
10- 1 1 10
VBEsat
(mV)
IC (mA)
102103
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 4. Base-emitter saturation voltage as a function of
collector current; typical values
PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 22 February 2018 5 / 10
Nexperia PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
0 5
1200
0
400
800
1000
200
600
1 2
VCE (V)
3
IC
(mA)
4
mhc083
(10)
(2)
(4)
(6)
(5)
(3)
(1)
(8)
(7)
(9)
Tamb = 25 °C
(1) IB = 25 mA
(2) IB = 22.5 mA
(3) IB = 20 mA
(4) IB = 17.5 mA
(5) IB = 15 mA
(6) IB = 12.5 mA
(7) IB = 10 mA
(8) IB = 7.5 mA
(9) IB = 5 mA
(10) IB = 2.5 mA
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
103
102
10
1
10- 1
mhc087
10- 1 1
RCEsat
(Ω)
10 IC (mA)
102103
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 6. Collector-emitter saturation resistance as a
function of collector current; typical values
11. Package outline
03-04-03Dimensions in mm
0.62
0.55
0.55
0.47
0.50
0.46
0.65
0.20
0.12
3
2 1
0.30
0.22
0.30
0.22
1.02
0.95
0.35
Fig. 7. Package outline DFN1006-3 (SOT883)
PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 22 February 2018 6 / 10
Nexperia PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
12. Soldering
solder lands
solder resist
occupied area
solder paste
sot883_fr
1.3
0.3
0.6 0.7
0.4
0.9
0.3
(2×)
0.4
(2×)
0.25
(2×)
R0.05 (12×)
0.7
Dimensions in mm
Fig. 8. Reflow soldering footprint for DFN1006-3 (SOT883)
PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 22 February 2018 7 / 10
Nexperia PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
13. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change
notice
Supersedes
PBSS2540M v.2 20180222 Product data sheet - PBSS2540M v.1
Modifications: The format of this data sheet has been redesigned to comply with the identity guidelines
of Nexperia.
Legal texts have been adapted to the new company name where appropriate.
PBSS2540M v.1 20030722 Product data sheet - -
PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 22 February 2018 8 / 10
Nexperia PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
14. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
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PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 22 February 2018 9 / 10
Nexperia PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
15. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 4
11. Package outline.......................................................... 6
12. Soldering..................................................................... 7
13. Revision history..........................................................8
14. Legal information....................................................... 9
© Nexperia B.V. 2018. All rights reserved
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Date of release: 22 February 2018
PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 22 February 2018 10 / 10