BZX55-Series
Document Number 85604
Rev. 1.4, 21-Feb-06
Vishay Semiconductors
www.vishay.com
1
94 9367
Small Signal Zener Diodes
Features
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
•Low noise
• Available with tighter tolerances
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Voltage stabilization
Mechanical Data
Case: DO-35 Glass case
Weight: approx. 125 mg
Packaging Codes/Options:
TR/10 k per 13" reel, 30 k/box
TAP/10 k per Ammopack (52 mm tape), 30 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Power dissipation l = 4 mm, TL = 25 °C PV500 mW
Z-current IZPV/VZmA
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 175 °C
Parameter Test condition Symbol Value Unit
Junction ambient l = 4 mm, TL = constant RthJA 300 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage IF = 200 mA VF1.5 V
e2
www.vishay.com
2
Document Number 85604
Rev. 1.4, 21-Feb-06
BZX55-Series
Vishay Semiconductors
Electrical Characteristics
BZX55C..
1) Other tolerances available on request:
BZX55A... ± 1 % of VZnom, BZX55F... ± 3 % of VZnom
Partnumber Zener Voltage
Range1)
Dynamic
Resistance
Te s t
Current
Temperature
Coefficient
Te s t
Current
Reverse Leakage Current
VZ at IZT rzjT at
IZT,
f = 1 kHz
rzjK at
IZK,
f = 1 kHz
IZT TKVZ IZK IR at
Tamb =
25 °C
IR at
Tamb =
150 °C
at VR
VΩmA %/K mA µA V
min max min max
BZX55C2V4 2.28 2.56 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 1
BZX55C2V7 2.5 2.9 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1
BZX55C3V0 2.8 3.2 < 85 < 600 5 - 0.08 - 0.05 1 < 4 < 40 1
BZX55C3V3 3.1 3.5 < 85 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZX55C3V6 3.4 3.8 < 85 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZX55C3V9 3.7 4.1 < 85 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZX55C4V3 4 4.6 < 75 < 600 5 - 0.06 - 0.03 1 < 1 < 20 1
BZX55C4V7 4.4 5 < 60 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1
BZX55C5V1 4.8 5.4 < 35 < 550 5 - 0.02 0.02 1 < 0.1 < 2 1
BZX55C5V6 5.2 6 <25 < 450 5 - 0.05 0.05 1 < 0.1 < 2 1
BZX55C6V2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2
BZX55C6V8 6.4 7.2 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3
BZX55C7V5 7 7.9 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5
BZX55C8V2 7.7 8.7 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2
BZX55C9V1 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8
BZX55C10 9.4 10.6 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5
BZX55C11 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2
BZX55C12 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1
BZX55C13 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10
BZX55C15 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11
BZX55C16 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12
BZX55C18 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13
BZX55C20 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15
BZX55C22 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16
BZX55C24 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18
BZX55C27 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20
BZX55C30 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22
BZX55C33 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24
BZX55C36 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27
BZX55C39 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 < 5 30
BZX55C43 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33
BZX55C47 44 50 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36
BZX55C51 48 54 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39
BZX55C56 52 60 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43
BZX55C62 58 66 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47
BZX55C68 64 72 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51
BZX55C75 70 79 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
BZX55-Series
Document Number 85604
Rev. 1.4, 21-Feb-06
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
BZX55B..
1) Other tolerances available on request:
BZX55A... ± 1 % of VZnom, BZX55F... ± 3 % of VZnom
Partnumber Zener Voltage
Range1)
Dynamic
Resistance
Test
Current
Temperature
Coefficient
Te st
Current
Reverse Leakage Current
VZ at IZT rzjT at
IZT,
f = 1 kHz
rzjK at
IZK,
f = 1 kHz
IZT TKVZ IZK IR at
Tamb =
25 °C
IR at
Tamb =
150 °C
at VR
VΩmA %/K mA µA V
min max min max
BZX55B2V7 2.64 2.76 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1
BZX55B3V0 2.94 3.06 < 90 < 600 5 - 0.08 - 0.05 1 < 4 < 40 1
BZX55B3V3 3.24 3.36 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZX55B3V6 3.52 3.68 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZX55B3V9 3.82 3.98 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZX55B4V3 4.22 4.38 < 90 < 600 5 - 0.06 - 0.03 1 < 1 < 20 1
BZX55B4V7 4.6 4.8 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1
BZX55B5V1 5 5.2 < 60 < 550 5 - 0.02 0.02 1 < 0.1 < 2 1
BZX55B5V6 5.48 5.72 < 40 < 450 5 - 0.05 0.05 1 < 0.1 < 2 1
BZX55B6V2 6.08 6.32 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2
BZX55B6V8 6.66 6.94 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3
BZX55B7V5 7.35 7.65 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5
BZX55B8V2 8.04 8.36 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2
BZX55B9V1 8.92 9.28 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8
BZX55B10 9.8 10.2 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5
BZX55B11 10.78 11.22 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2
BZX55B12 11.76 12.24 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1
BZX55B13 12.74 13.26 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10
BZX55B15 14.7 15.3 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11
BZX55B16 15.7 16.3 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12
BZX55B18 17.64 18.36 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13
BZX55B20 19.6 20.4 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15
BZX55B22 21.55 22.45 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16
BZX55B24 23.5 24.5 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18
BZX55B27 26.4 27.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20
BZX55B30 29.4 30.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22
BZX55B33 32.4 33.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24
BZX55B36 35.3 36.7 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27
BZX55B39 38.2 39.8 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 < 5 30
BZX55B43 42.1 43.9 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33
BZX55B47 46.1 47.9 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36
BZX55B51 50 52 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39
BZX55B56 54.9 57.1 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43
BZX55B62 60.8 63.2 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47
BZX55B68 66.6 69.4 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51
BZX55B75 73 76.5 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
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4
Document Number 85604
Rev. 1.4, 21-Feb-06
BZX55-Series
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Thermal Resistance vs. Lead Length
Figure 2. Total Power Dissipation vs. Ambient Temperature
Figure 3. Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
95 9611
0 5 10 15
0
100
200
300
400
500
20
ll
RthJA - Therm. Resist. Junction Ambient (K/W)
I - Lead Length (mm)
TL = constant
0 120 160
0
100
300
400
500
600
P
tot
- Total Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
200
95 9602
200
80
40
10 15 20
1
10
100
1000
VZ - Voltage Change (mV)
VZ - Z-Voltage (V)
25
95 9598
Tj = 25 °C
IZ = 5 mA
05
Figure 4. Typical Change of Working Voltage vs. Junction
Temperature
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 6. Diode Capacitance vs. Z-Voltage
- 60 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
Tj - Junction Temperature (°C)
240
95 9599
0
V
Ztn
= V
Zt
/V
Z
(25 °C)
0
TKVZ = 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
30
- 5
0
5
10
15
V
Z
- Z-Voltage (V)
50
95 9600
40
I
Z
= 5 mA
10 20
0
TK
VZ
- Temperature Coefficient of V
Z
(10
-4
/K)
10 15
0
50
100
150
200
C
D
- Diode Capacitance (pF)
V
Z
- Z-Voltage (V)
25
95 9601
20
T
j
= 25 °C
V
R
= 2 V
05
BZX55-Series
Document Number 85604
Rev. 1.4, 21-Feb-06
Vishay Semiconductors
www.vishay.com
5
Figure 7. Forward Current vs. Forward Voltage
Figure 8. Z-Current vs. Z-Voltage
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
IF - Forward Current (mA)
V
F
- Forward Voltage (V)
T
j
= 25 °C
820
95 9604
0
20
40
60
80
100
IZ - Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
046 12
VZ - Z-Voltage (V)
Figure 9. Z-Current vs. Z-Voltage
Figure 10. Differential Z-Resistance vs. Z-Voltage
15 20 25 30
0
10
20
30
40
50
I
Z
- Z-Current (mA)
V
Z
- Z-Voltage (V)
35
95 9607
P
tot
= 500 mW
T
amb
= 25 °C
0 5 10 15 20
1
10
100
1000
(Ω)
25
95 9606
Tj = 25 °C
IZ = 1 mA
5 mA
10 mA
V
Z
- Z-Voltage (V)
r
Z
- Differential Z-Resistance
Figure 11. Thermal Response
1
10
100
1000
Z
thp
- Thermal Resistance for Pulse Cond. (KW)
t
P
- Pulse Length (ms)
95 9603
10
-1
10
0
10
1
10
2
t
P
/T = 0.5
t
P
/T = 0.2
t
P
/T = 0.1
t
P
/T = 0.05
t
P
/T = 0.02
t
P
/T = 0.01
Single Pulse R
thJA
= 300 K/W
T = T
jmax
- T
amb
i
ZM
= (- V
Z
+ (V
Z
2
+ 4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
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6
Document Number 85604
Rev. 1.4, 21-Feb-06
BZX55-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
Cathode Identification
∅2.0 (0.08) max.
∅0.55 (0.02) max.
3.9 (0.15) max.26 (1.02) min.
94 9366
Standard Glass Case
54A2 DIN41880
JEDEC DO 35 26 (1.02) min.
ISO Method E
BZX55-Series
Document Number 85604
Rev. 1.4, 21-Feb-06
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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