BSP318S - Infineon Technologies

2008-03-21

Page 1

BSP318S

Rev 2.2

SIPMOS Small-Signal-Transistor

Features

• N-Channel

• Enhancement mode

• Avalanche rated

• Logic Level

• d

v

/d

t

rated

Product Summary

Drain source voltage V

V

DS 60

Drain-Source on-state resistance

R

DS(on) 0.09 Ω

Continuous drain current A

I

D2.6

VPS05163

123

4

Type Package Tape and Reel

BSP318S PG-SOT223 L6327: 1000 pcs/r

Maximum Ratings,at

T

j

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current 2.6 A

I

D

Pulsed drain current

T

A

= 25 °C

I

D puls

10.4

Avalanche energy, single pulse

I

D

= 2.6 A,

V

DD

= 25 V,

R

GS

= 25 Ω60 mJ

E

AS

Avalanche current,periodic limited by

T

jmax

A

I

AR

2.6

Avalanche energy, periodic limited by

T

jmax

0.18 mJ

E

AR

Reverse diode d

v

/d

t

I

S

= 2.6 A,

V

DS

= 20 V, d

i

/d

t

= 200 A/µs,

T

jmax

= 150 °C

kV/µsd

v

/d

t

6

Gate source voltage ±20 V

V

GS

Power dissipation

T

A

= 25 °C W

P

tot

1.8

Operating and storage temperature

T

j ,

T

stg

-55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Pb-free lead plating; RoHS compliant

•

Pin 1 Pin 2, 4 PIN 3

GDS

Marking

BSP318S

• Qualified according to AEC Q101

Packaging

Non dry

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2008-03-21

Page 2

BSP318S

Rev 2.2

Thermal Characteristics

Parameter Symbol UnitValues

typ. max.min.

Characteristics

Thermal resistance, junction - soldering point

(Pin 4) K/W-

R

thJS - 17

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

R

thJA

-

100

-

70

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter ValuesSymbol Unit

max.typ.min.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = 0.25 mA

V

(BR)DSS 60 - V-

Gate threshold voltage,

V

GS =

V

DS

I

D = 20 µA 1.2 1.6

V

GS(th) 2

Zero gate voltage drain current

V

DS = 60 V,

V

GS = 0 V,

T

j = 25 °C

V

DS = 60 V,

V

GS = 0 V,

T

j = 150 °C

1

100

0.1

-

µA

I

DSS

-

Gate-source leakage current

V

GS = 20 V,

V

DS = 0 V

I

GSS 10 nA100-

R

DS(on) - 0.12Drain-Source on-state resistance

V

GS = 4.5 V,

I

D = 2.6 A 0.15 Ω

Drain-Source on-state resistance

V

GS = 10 V,

I

D = 2.6 A

R

DS(on) - 0.07 0.09

1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

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2008-03-21

Page 3

BSP318S

Rev 2.2

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS≥2*

I

D*

R

DS(on)max ,

I

D = 2.6 A

g

fs 2.4 S-5.5

Input capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz - 380 pF300

C

iss

Output capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz - 90 120

C

oss

6550-

C

rss

Reverse transfer capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

Turn-on delay time

V

DD = 30 V,

V

GS = 4.5 V,

I

D = 2.6 A,

R

G = 16 Ω

t

d(on) 12 ns20-

Rise time

V

DD = 30 V,

V

GS = 4.5 V,

I

D = 2.6 A,

R

G = 16 Ω

t

r- 15 25

20 30

t

d(off)

Turn-off delay time

V

DD = 30 V,

V

GS = 4.5 V,

I

D = 2.6 A,

R

G = 16 Ω

-

Fall time

V

DD = 30 V,

V

GS = 4.5 V,

I

D = 2.6 A,

R

G = 16 Ω

t

f- 15 25

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2008-03-21

Page 4

BSP318S

Rev 2.2

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Gate charge at threshold

V

DD = 40 V,

I

D = 0.1 A, V = 1 V -

Q

G(th) nC0.60.4

Gate charge at

V

GS = 5 V

V

DD = 40 V,

I

D = 2.6 A,

V

GS = 0 to 5 V

Q

g(5) 7 10-

20-

Q

g

Gate charge total

V

DD = 40 V,

I

D = 2.6 A,

V

GS = 0 to 10 V 14

Gate plateau voltage

V

DD = 40 V ,

I

D = 2.6 A

V

(plateau) - 3.6 - V

Parameter ValuesSymbol Unit

max.typ.min.

Reverse Diode

A-- 2.6

I

S

Inverse diode continuous forward current

T

A = 25 °C

Inverse diode direct current,pulsed

T

A = 25 °C -

I

SM - 10.4

Inverse diode forward voltage

V

GS = 0 V,

I

F = 5.2 A V1.2

V

SD 0.95-

Reverse recovery time

V

R = 30 V,

I

F=

I

S , d

i

F/d

t

= 100 A/µs - 75 ns50

t

rr

- 0.1 0.15

Q

rr

Reverse recovery charge

V

R = 30 V,

I

F=

l

S , d

i

F/d

t

= 100 A/µs µC

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2008-03-21

Page 5

BSP318S

Rev 2.2

Power Dissipation

P

tot =

f

(TA)

0 20 40 60 80 100 120 °C 160

TA

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

W

1.9

BSP318S

P

tot

Drain current

I

D =

f

(

T

A)

0 20 40 60 80 100 120 °C 160

TA

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

A

2.8

BSP318S

I

D

Safe operating area

I

D =

f

(

V

DS )

parameter :

D

= 0 ,

T

A = 25 °C

10 -1 10 0 10 1 10 2

V

DS

-2

10

-1

10

0

10

1

10

2

10

A

BSP318S

I

D

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

t

p = 140.0µs

Transient thermal impedance

Z

thJA =

f

(tp)

parameter :

D =

t

p/

T

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4

s

t

p

-2

10

-1

10

0

10

1

10

2

10

K/W

BSP318S

Z

thJA

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

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2008-03-21

Page 6

BSP318S

Rev 2.2

Typ. output characteristic

I

D = f (

V

DS);

T

j=25°C

parameter:

t

p = 80 µs

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0

V

DS

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

A

6.5

BSP318S

I

D

V

GS [V]

a

a 2.0

b

b 2.5

cc 3.0

d

d 3.5

e

e 4.0

f

f 4.5

g

g 5.0

h

h 5.5

i

i 6.0

j

j 7.0

k

k 8.0

l

P

tot = 1.80W

l 10.0

Typ. transfer characteristics

I

D=

f

(

V

GS )

V

DS≥ 2 x

I

D x

R

DS(on)max

parameter:

t

p = 80 µs

0 1 2 3 4 5 6 7 8 V10

V

GS

0

1

2

3

4

5

6

7

8

9

10

11

12

A

15

I

D

Drain-source on-resistance

R

DS(on) =

f

(

T

j)

parameter :

I

D = 2.6 A,

V

GS = 4.5 V

-60 -20 20 60 100 °C 180

T

j

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

Ω

0.36

BSP318S

R

DS(on)

typ

98%

Gate threshold voltage

V

GS(th) =

f

(

T

j)

parameter:

V

GS =

V

DS,

I

D = 20 µA

-60 -20 20 60 100 140 °C 200

T

j

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

V

3.0

V

GS(th)

min

typ

max

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2008-03-21

Page 7

BSP318S

Rev 2.2

Typ. capacitances

C = f(VDS)

parameter:

V

GS=0 V,

f

=1 MHz

0 5 10 15 20 25 30 V40

V

DS

1

10

2

10

3

10

pF

C

iss

C

oss

C

rss

Forward characteristics of reverse diode

I

F =

f

(VSD)

parameter:

T

j , tp = 80 µs

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0

V

SD

-1

10

0

10

1

10

2

10

A

BSP318S

I

F

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

Avalanche Energy

E

AS =

f

(

T

j)

parameter:

I

D = 2.6 A,

V

DD = 25 V

R

GS = 25 Ω

20 40 60 80 100 120 °C 160

T

j

0

5

10

15

20

25

30

35

40

45

50

55

mJ

65

E

AS

Typ. gate charge

V

GS =

f

(

Q

Gate)

parameter:

I

D = 2.6 A pulsed

0 4 8 12 16 nC 24

Q

Gate

0

2

4

6

8

10

12

V

16

BSP318S

V

GS

DS max

V

0,8

DS max

V

0,2

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2008-03-21

Page 8

BSP318S

Rev 2.2

Drain-source breakdown voltage

V

(BR)DSS = f

(

T

j)

-60 -20 20 60 100 °C 180

T

j

54

56

58

60

62

64

66

68

V

72

BSP318S

V

(BR)DSS

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2008-03-21

Page 9

BSP318S

Rev 2.2

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