SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS
BCW65A EA BCW65AR 4V
BCW65B EB BCW65BR 5V
BCW65C EC BCW65CR 6V
BCW66F EF BCW66FR 7P
BCW66G EG BCW66GR 5T
BCW66H EH BCW66HR 7M
COMPLEMENTARY TYPES
BCW65 BCW67
BCW66 BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCW65 BCW66 UNIT
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 32 45 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC800 mA
Peak Collector Current(10ms) ICM 1000 mA
Base Current IB100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW65
BCW66
V(BR)CEO 32
45
VI
CEO
=10mA
ICEO
=10mA
BCW65
BCW66
V(BR)CES 60
75
VIC=10µA
IC
=10µA
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IEBO
=10µA
Collector-Emitter
Cut-off Current
BCW65
BCW66
ICES 20
20
20
20
nA
µA
nA
µA
VCES
= 32V
VCES
= 32V ,Tamb
=150o
C
VCES
= 45V
VCES
= 45V ,Tamb
=150o
C
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter Saturation Voltage VCE(sat) 0.3
0.7
V
V
IC
=100mA, IB
= 10mA
IC
= 500mA, IB
=50mA*
Base-Emitter Saturation Voltage VBE(SAT) 2 V I
C
=500mA, IB
=50mA*
Static
Forward
Current
Transfer
BCW65A
BCW66F
hFE 35
75
100
35
160 250
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
BCW65B
BCW66G
hFE 50
110
160
60
250 400
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
BCW65C
BCW66H
hFE 80
180
250
100
350 630
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
Transition Frequency fT100 MHz IC
=20mA, VCE =10V
f = 100MHz
Collector-Base Capacitance Ccbo 8 12pFV
CBO =10V, f =1MHz
Emitter-Base Capacitance Cebo 80 pF VEBO
=0.5V, f =1MHz
Noise Figure N 2 10 dB IC
= 0.2mA, VCE = 5V
RG
=1kΩ
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns
ns
IC
=150mA
IB1=- IB2 =15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
C
B
E
SOT23
BCW65
BCW66
3 - 28 3 - 27
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS
BCW65A EA BCW65AR 4V
BCW65B EB BCW65BR 5V
BCW65C EC BCW65CR 6V
BCW66F EF BCW66FR 7P
BCW66G EG BCW66GR 5T
BCW66H EH BCW66HR 7M
COMPLEMENTARY TYPES
BCW65 BCW67
BCW66 BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCW65 BCW66 UNIT
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 32 45 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC800 mA
Peak Collector Current(10ms) ICM 1000 mA
Base Current IB100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW65
BCW66
V(BR)CEO 32
45
VI
CEO
=10mA
ICEO
=10mA
BCW65
BCW66
V(BR)CES 60
75
VIC=10µA
IC
=10µA
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IEBO
=10µA
Collector-Emitter
Cut-off Current
BCW65
BCW66
ICES 20
20
20
20
nA
µA
nA
µA
VCES
= 32V
VCES
= 32V ,Tamb
=150o
C
VCES
= 45V
VCES
= 45V ,Tamb
=150o
C
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter Saturation Voltage VCE(sat) 0.3
0.7
V
V
IC
=100mA, IB
= 10mA
IC
= 500mA, IB
=50mA*
Base-Emitter Saturation Voltage VBE(SAT) 2 V I
C
=500mA, IB
=50mA*
Static
Forward
Current
Transfer
BCW65A
BCW66F
hFE 35
75
100
35
160 250
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
BCW65B
BCW66G
hFE 50
110
160
60
250 400
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
BCW65C
BCW66H
hFE 80
180
250
100
350 630
IC
=100µA, VCE =10V
IC
= 10mA, VCE = 1V
IC
=100mA, VCE = 1V*
IC
=500mA, VCE = 2V*
Transition Frequency fT100 MHz IC
=20mA, VCE =10V
f = 100MHz
Collector-Base Capacitance Ccbo 8 12pFV
CBO =10V, f =1MHz
Emitter-Base Capacitance Cebo 80 pF VEBO
=0.5V, f =1MHz
Noise Figure N 2 10 dB IC
= 0.2mA, VCE = 5V
RG
=1kΩ
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns
ns
IC
=150mA
IB1=- IB2 =15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
C
B
E
SOT23
BCW65
BCW66
3 - 28 3 - 27
