PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 1
February 2009
PN2222A/MMBT2222A/PZT2222A
NPN General Purpose Amplifier
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
• Sourced from process 19.
Absolute Maximum Ratings * Ta = 25×C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6 ” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.
Symbol Parameter Ratings Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 75 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current 1.0 A
TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Max. Units
PN2222A *MMBT2222A **PZT2222A
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
PN2222A MMBT2222A PZT2222A
EBC TO-92 SOT-23 SOT-223
Mark:1P
C
B
EE
BC
C
PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 2
Electrical Characteristics Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 40 V
BV(BR)CBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 75 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6.0 V
ICEX Collector Cutoff Current VCE = 60V, VEB(off) = 3.0V 10 nA
ICBO Collector Cutoff Current VCB = 60V, IE = 0
VCB = 60V, IE = 0, Ta = 125°C0.01
10 μA
μA
IEBO Emitter Cutoff Current VEB = 3.0V, IC = 0 10 nA
IBL Base Cutoff Current VCE = 60V, VEB(off) = 3.0V 20 nA
On Characteristics
hFE DC Current Gain IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 10mA, VCE = 10V, Ta = -55°C
IC = 150mA, VCE = 10V *
IC = 150mA, VCE = 10V *
IC = 500mA, VCE = 10V *
35
50
75
35
100
50
40
300
VCE(sat) Collector-Emitter Saturation Voltage * IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V 0.3
1.0 V
V
VBE(sat) Base-Emitter Saturation Voltage * IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V 0.6 1.2
2.0 V
V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz 300 MHz
Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8.0 pF
Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 25 pF
rb’CcCollector Base Time Constant IC = 20mA, VCB = 20V, f = 31.8MHz 150 pS
NF Noise Figure IC = 100μA, VCE = 10V,
RS = 1.0KΩ, f = 1.0KHz 4.0 dB
Re(hie) Real Part of Common-Emitter
High Frequency Input Impedance IC = 20mA, VCE = 20V, f = 300MHz 60 Ω
Switching Characteristics
tdDelay Time VCC = 30V, VEB(off) = 0.5V,
IC = 150mA, IB1 = 15mA 10 ns
trRise Time 25 ns
tsStorage Time VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA 225 ns
tfFall Time 60 ns
PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 3
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature Figure 6. Emitter Transition and Output Capacitance
vs Reverse Bias Voltage
Typical Pulsed Current Gain
vs Coll ector Curre nt
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CUR RENT G AI N
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
1 10 100 500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 캜
C
β= 10
125 캜
- 40 캜
°C
°C
°C
B a se -E mitter S a tu ra tion
Vo lta g e v s C o lle c to r C u rr e n t
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTO R CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β= 10
25 캜
125 캜
- 40 캜
°C
°C
°C
IC
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 ° C
IC
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 40V
CB
CBO
°
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
0.1 1 10 100
4
8
12
16
20
REVERSE BIAS VOLTAG E ( V)
CAPACIT ANCE (pF)
f = 1 M Hz
Cob
Cte
PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 4
Typical Characteristics
Figure 1. Turn On and Turn Off Times
vs Collector Current Figure 2. Switching Times vs Collector Current
Figure 3. Power Dissipation vs
Ambient Temperature Figure 4. Common Emitter Characteristics
Figure 5. Common Emitter Characteristics Figure 6. Common Emitter Characteristics
Turn On and Turn Off Ti mes
vs Collecto r Current
10 100 1000
0
80
160
240
320
400
I - COLLECTO R CURRENT (mA)
TIME ( nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 25 V
cc
IC
S wi t ching Times
vs Col lecto r Current
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2
I
c
10
V = 25 V
cc
tf
td
IC
Po wer Diss ip atio n vs
A mbient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
Common Emitter Characteristics
0 102030405060
0
2
4
6
8
I - COLLECTOR CURRENT (mA)
CHAR. RELATIVE TO VALUES AT I = 10mA
V = 10 V
CE
C
C
T = 25 C
A o
hoe
hre
hfe
h ie
Common Emitter Characteristics
0 20406080100
0
0.4
0.8
1.2
1.6
2
2.4
T - AMBIENT TEMPERATURE ( C)
CHAR. RELATIVE TO VALUES AT T = 25 C
V = 10 V
CE
A
A
I = 10 mA
C
h oe
hre
hfe
hie
o
o
Common Emitter Characteristics
0 5 10 15 20 25 30 35
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
V - COLLECTOR VOLTAGE (V)
CHAR. RELATIVE TO VAL UES AT V = 10V
CE
CE
T = 25 C
A o
hoe
hre
hfe
h ie
I = 10 mA
C
PN2222A/MMBT2222A/PZT2222A NPN General Purpose AmplifierPN2222A/MMBT2222A/PZT2222A
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 5
Rev. I31
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