MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HG-66H IC ................................................................ 1200A VCES ....................................................... 3300V High Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 1900.5 570.25 5 - M8 NUTS 570.25 170.1 570.25 5 3 1 G (2) C C G E 90.1 E (4) C C 1400.5 2 1240.25 4 440.3 6 (6) E E E (5) (3) (1) C CIRCUIT DIAGRAM 8 - 7 MOUNTING HOLES 61.20.5 180.3 410.5 screwing depth min. 16.5 50.15 120.3 220.3 LABEL 38 +1.0 0 61.20.5 screwing depth min. 7.7 59.20.5 48 +1.0 0 140.3 40.40.3 3 - M4 NUTS HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol Item VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Qpd Partial discharge tpsc Maximum short circuit pulse width Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Conditions VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C TC = 90C Pulse (Note 1) Pulse TC = 25C, IGBT part (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. V1 = 6900Vrms, V2 = 5100Vrms f = 60Hz (acc. to IEC 1287) VCC = 2200V, VCES 3300V, VGE = 15V Tj = 125C Ratings Unit 3300 20 1200 2400 1200 2400 12500 -40 ~ +150 -40 ~ +125 -40 ~ +125 10200 V V A A A A W C C C V 10 pC 10 s ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge V EC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy Conditions Limits Typ -- VCE = VCES, VGE = 0V, Tj = 25C IC = 120mA, VCE = 10V, Tj = 25C 5.0 6.0 7.0 V VGE = VGES, VCE = 0V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 125C -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.30 3.60 180 18.0 5.4 8.6 2.80 2.70 -- -- 1.60 -- -- 1.55 -- 800 0.90 0.5 4.20 -- -- -- -- -- 3.60 -- 1.60 1.00 -- 2.50 1.00 -- 1.40 -- -- A (Note 4) (Note 4) VCE = 10V, f = 100kHz VGE = 0V, Tj = 25C VCC = 1650V, IC = 1200A, VGE = 15V, Tj = 25C IE = 1200A, VGE = 0V, Tj = 25C (Note 4) IE = 1200A, VGE = 0V, Tj = 125C (Note 4) VCC = 1650V, IC = 1200A, VGE = 15V RG(on) = 1.6, Tj = 125C, Ls = 100nH Inductive load VCC = 1650V, IC = 1200A, VGE = 15V RG(off) = 1.6, Tj = 125C, Ls = 100nH Inductive load VCC = 1650V, IC = 1200A, VGE = 15V RG(on) = 1.6, Tj = 125C, Ls = 100nH Inductive load Max 15 Unit Min -- mA V nF nF nF C V s s J/pulse s s J/pulse s C J/pulse Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K Min -- -- -- Limits Typ -- -- 6.0 Max 10.0 20.0 -- Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item M Mounting torque -- CTI da ds LC-E(int) RC-E(int) Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part TC = 25C Min 7.0 3.0 1.0 -- 600 26.0 56.0 -- -- Limits Typ -- -- -- 1.35 -- -- -- 18 0.18 Max 15.0 6.0 3.0 -- -- -- -- -- -- Unit N*m kg -- mm mm nH m HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 2400 2400 VCE = 20V Tj = 125C 2000 VGE = 20V COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 2000 VGE = 15V 1600 VGE = 12V 1200 VGE = 10V 800 VGE =8V 400 1600 1200 800 400 Tj = 25C Tj = 125C 0 1 2 3 4 5 0 6 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 12 6 VGE = 15V EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 5 4 3 2 1 5 4 3 2 1 Tj = 25C Tj = 125C Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) 0 0 400 800 1200 1600 2000 2400 EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VGE = 0V, Tj = 25C f = 100kHz 7 5 VCC = 1650V, IC = 1200A Tj = 25C 3 CAPACITANCE (nF) GATE-EMITTER VOLTAGE (V) Cies 2 102 7 5 3 2 Coes 101 7 5 Cres 16 12 8 4 3 2 100 -1 10 5 7 101 2 3 0 5 7 102 0 3 6 9 12 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (C) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 6 VCC = 1650V, VGE = 15V RG(on) = RG(off) = 1.6 Tj = 125C, Inductive load 2.5 SWITCHING ENERGIES (J/pulse) 2 3 VCC = 1650V, IC = 1200A VGE = 15V Tj = 125C, Inductive load Eon 5 Eoff 2 1.5 1 Erec SWITCHING ENERGIES (J/pulse) 3 5 7 100 2 3 Eon 4 3 Eoff 2 0.5 1 0 0 Erec 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) 0 5 10 15 20 GATE RESISTANCE () HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 102 VCC = 1650V, VGE = 15V RG(on) = RG(off) = 1.6 Tj = 125C, Inductive load 7 5 REVERSE RECOVERY TIME (s) 3 SWITCHING TIMES (s) 2 101 7 5 td(off) 3 2 100 td(on) 7 5 tr 3 tf 2 10-1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 COLLECTOR CURRENT (A) 104 VCC = 1650V, VGE = 15V RG(on) = RG(off) = 1.6 Tj = 125C, Inductive load 7 5 3 3 2 2 101 103 Irr 7 5 7 5 3 3 2 2 100 102 7 5 7 5 trr 3 3 2 2 10-1 1 10 2 3 5 7 102 2 3 5 7 103 REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 2 3 5 7 104 EMITTER CURRENT (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 1.0 Single Pulse, TC = 25C Rth(j-c)Q = 10K/kW Rth(j-c)R = 20K/kW 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 3000 REVERSE RECOVERY CURRENT (A) VCC 2200V, VGE = +/-15V Tj = 125C, RG(off) 1.6 COLLECTOR CURRENT (A) 2500 2000 1500 1000 500 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) VCC 2200V, di/dt 5400A/s Tj = 125C 2500 2000 1500 1000 500 0 0 1000 2000 3000 4000 EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005