Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC ................................................................ 1200A
●VCES ....................................................... 3300V
●High Insulated Type
●1-element in a Pack
●AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
CM1200HG-66H
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
C
G
E
(6)
C
(5)
E
(4)
C
(3)
E
(2)
C
(1)
E
LABEL
6
5
4
3
E
GC
2
1
CIRCUIT DIAGRAM
61.2±0.5 61.2±0.5
12±0.3
18±0.3
22±0.3
5 - M8 NUTS
17±0.19±0.1
124±0.25
44±0.3
190±0.5
57±0.25 57±0.2557±0.25
140±0.5
41±0.5
8 - φ 7 MOUNTING HOLES
3 - M4 NUTS
14±0.3 59.2±0.5
5±0.15
48
+1.0
0
40.4±0.3
38
+1.0
0
screwing depth
min. 7.7
screwing depth
min. 16.5
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
V
V
VCE = VCES, VGE = 0V, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 1200A, VGE = 15V, Tj = 25°C (Note 4)
IC = 1200A, VGE = 15V, Tj = 125°C (Note 4)
VCC = 1650V, IC = 1200A, VGE = 15V, Tj = 25°C
IE = 1200A, VGE = 0V, Tj = 25°C (Note 4)
IE = 1200A, VGE = 0V, Tj = 125°C (Note 4)
VCC = 1650V, IC = 1200A, VGE = ±15V
RG(on) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 1650V, IC = 1200A, VGE = ±15V
RG(off) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 1650V, IC = 1200A, VGE = ±15V
RG(on) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
IC = 120mA, VCE = 10V, Tj = 25°C
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
Collector-emitter voltage
Gate-emitter voltage
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Partial discharge
Maximum short circuit pulse
width
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 90°C
Pulse (Note 1)
Pulse (Note 1)
TC = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
V1 = 6900Vrms, V2 = 5100Vrms
f = 60Hz (acc. to IEC 1287)
VCC = 2200V, VCES ≤ 3300V, VGE = 15V
Tj = 125°C
Collector current
Emitter current
3300
±20
1200
2400
1200
2400
12500
–40 ~ +150
–40 ~ +125
–40 ~ +125
10200
10
10
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
V
A
A
A
A
W
°C
°C
°C
V
pC
µs
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Top
Tstg
Viso
Qpd
tpsc
Min Typ Max
15
0.5
4.20
—
—
—
—
—
3.60
—
1.60
1.00
—
2.50
1.00
—
1.40
—
—
mA
µA
nF
nF
nF
µC
V
µs
µs
J/pulse
µs
µs
J/pulse
µs
µC
J/pulse
—
—
3.30
3.60
180
18.0
5.4
8.6
2.80
2.70
—
—
1.60
—
—
1.55
—
800
0.90
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
Qg
VEC
(Note 2)
td(on)
tr
Eon
td(off)
tf
Eoff
trr
(Note 2)
Qrr
(Note 2)
Erec
(Note 2)
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions
VGE(th)
VCE(sat)
Limits Unit
6.0
5.0
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
7.0
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
K/kW
K/kW
K/kW
Thermal resistance
Contact thermal resistance
Min Typ Max
10.0
20.0
—
—
—
6.0
—
—
—
THERMAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
M
—
CTI
da
ds
LC-E(int)
RC-E(int)
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
TC = 25°C
N·m
kg
—
mm
mm
nH
mΩ
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Min Typ Max
15.0
6.0
3.0
—
—
—
—
—
—
—
—
—
1.35
—
—
—
18
0.18
7.0
3.0
1.0
—
600
26.0
56.0
—
—
MECHANICAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
EMITTER-COLLECTOR VOLTAGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
2000
2400
1600
1200
800
400
03421056
2000
2400
1600
1200
800
400
0684201012
6
5
4
3
2
0400 800 1200 16000 2000 2400
1
6
5
4
3
2
0800 1200400 16000 2000 2400
1
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
V
CE
= 20V
T
j
= 125°C
V
GE
= 10V
V
GE
=8V
V
GE
= 12V
V
GE
= 20V
V
GE
= 15V
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
102
103
101
100
100
10-1 23 57 101102
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (nF)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE (µC)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
SWITCHING ENERGIES (J/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
GATE RESISTANCE (Ω)
SWITCHING ENERGIES (J/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
20
16
12
8
4
0963012
2.5
3
2
1.5
1
0.5
01200 16008004000 2000 2400
6
5
4
3
2
051001520
1
Cres
Coes
Cies
VGE = 0V, Tj = 25°C
f = 100kHz
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 1.6Ω
Tj = 125°C, Inductive load
VCC = 1650V, IC = 1200A
VGE = ±15V
Tj = 125°C, Inductive load
Eon
Eoff
Erec
Eon
Eoff
Erec
VCC = 1650V, IC = 1200A
Tj = 25°C
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10-2
10-3
23 57
10-1
23 57
100
23 57
101
23 57
10
3
10
4
10
2
10
1
10
1
10
2
10
0
10
-1
10
2
10
1
23 57
10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
1
10
2
10
0
10
-1
10
2
10
1
23 57
10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
COLLECTOR CURRENT (A)
SWITCHING TIMES (µs)
TIME (s)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
REVERSE RECOVERY TIME (µs)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2
1.0
0.8
0.6
0.4
0
0.2
REVERSE RECOVERY CURRENT (A)
V
CC
= 1650V, V
GE
= ±15V
R
G(on)
= R
G(off)
=
1.6Ω
T
j
= 125°C, Inductive load
V
CC
= 1650V, V
GE
= ±15V
R
G(on)
= R
G(off)
=
1.6Ω
T
j
= 125°C, Inductive load
t
d(off)
t
d(on)
t
r
t
f
t
rr
I
rr
Single Pulse, T
C
= 25°C
R
th(j–c)Q
= 10K/kW
R
th(j–c)R
= 20K/kW
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
EMITTER-COLLECTOR VOLTAGE (V)
REVERSE RECOVERY CURRENT (A)
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(RRSOA)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
3000
2500
2000
1500
1000
01000 20000 3000 4000
500
3000
2500
2000
1500
1000
01000 20000 3000 4000
500
V
CC
≤ 2200V, V
GE
= +/-15V
T
j
= 125°C, R
G(off)
≥ 1.6ΩV
CC
≤ 2200V, di/dt ≤ 5400A/µs
T
j
= 125°C
