© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
VGE(th) IC = 250A, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 300 A
TJ = 125C 5 mA
IGES VCE = 0V, VGE = 20V 100 nA
VCE(sat) IC = 60A, VGE = 15V, Note 1 1.35 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25C to 150C 600 V
VCGR TJ= 25C to 150C, RGE = 1M 600 V
VGES Continuous 20 V
VGEM Transient 30 V
IC25 TC= 25C75A
IC110 TC= 110C52A
IF110 TC= 110C32A
ICM TC= 25C, 1ms 400 A
SSOA VGE = 15V, TVJ = 125C, RG = 3ICM = 150 A
(RBSOA) Clamped Inductive Load VCE VCES
PCTC= 25C 200 W
TJ -55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
IISOL < 1mA t = 20 seconds 3000 V~
FCMounting Force 20..120/4.5..27 N/lb
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C
Weight 5 g
DS100143A(8/13)
VCES = 600V
IC110 = 52A
VCE(sat)
£ 1.35V
tfi(typ) = 250ns
IXGR72N60A3H1
GenX3TM 600V IGBT
w/Diode
(Electrically Isolated Tab)
Ultra-Low Vsat PT IGBT for up to
5kHz Switching
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V Electrical Isolation
Optimized for Low Conduction Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
Preliminary Technical Information
ISOPLUS247TM
GCE
G = Gate C = Collector
E = Emitter
Isolated Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGR72N60A3H1
Note 1. Pulse Test, t 300s, Duty Cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC= 60A, VCE = 10V, Note 1 48 75 S
Cies 6600 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 360 pF
Cres 80 pF
Qg 230 nC
Qge IC= 60A, VGE = 15V, VCE = 0.5 • VCES 40 nC
Qgc 80 nC
td(on) 31 ns
tri 34 ns
Eon 1.4 mJ
td(off) 320 ns
tfi 250 ns
Eoff 3.5 mJ
td(on) 29 ns
tri 34 ns
Eon 2.6 mJ
td(off) 510 ns
tfi 375 ns
Eoff 6.5 mJ
RthJC 0.62 C/W
RthCS 0.15 C/W
Inductive load, TJ = 25
C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3
Inductive load, TJ = 125
C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified) Characteristic Values
Symbol Test Conditions Min. Typ. Max.
VF IF = 60A, VGE = 0V, Note 1 1.6 2.3 V
TJ = 150°C 1.4 1.8 V
IRM IF = 60A, VGE = 0V, TJ = 100°C 8.3 A
-diF/dt = 200A/μs, VR = 300V
trr IF = 60A, -di/dt = 200A/μs, VR = 300V, TJ = 100°C 140 ns
RthJC 0.8 °C/W
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
ISOPLUS247 (IXGR) Outline
1 - Gate
2 - Collector
3 - Emitter
© 2013 IXYS CORPORATION, All Rights Reserved
IXGR72N60A3H1
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
9V
Fig. 2. Extended Output Characteristic s @ T
J
= 25ºC
0
60
120
180
240
300
012345678
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
11V
7V
9V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
20
40
60
80
100
120
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 120A
I
C
= 60A
I
C
= 30A
Fig. 5 . Colle c to r-to-Em itter Vo ltage
vs. Gate-to-Emitter Vo ltage
0.8
1.2
1.6
2.0
2.4
2.8
3.2
5 7 9 11 13 15
V
GE
- Volts
V
CE
- Volts
I
C
= 120A
60A
30A
T
J
= 25ºC
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGR72N60A3H1
Fig. 7. Transconductance
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g f s -
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Gate Cha rge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 60A
I
G
= 10mA
Fig. 9. Capa c itance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Cies
Coes
Cres
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 3
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2013 IXYS CORPORATION, All Rights Reserved
IXGR72N60A3H1
Fig. 17. Inductive Turn-off Switching Times vs .
Junction Temperature
220
240
260
280
300
320
340
360
380
400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
220
260
300
340
380
420
460
500
540
580
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
I
C
= 25A, 50A, 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
220
240
260
280
300
320
340
360
380
400
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
f i
- Nanoseconds
250
290
330
370
410
450
490
530
570
610
t
d(off)
- Nanoseconds
t f i
td(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35
R
G
- Ohms
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
9
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
I
C
= 25A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
360
363
366
369
372
375
378
381
384
387
390
0 5 10 15 20 25 30 35
R
G
- Ohms
t
f i
- Nanoseconds
400
500
600
700
800
900
1000
1100
1200
1300
1400
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
I
C
= 25A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
2
4
6
8
10
12
14
16
18
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
0.00
0.75
1.50
2.25
3.00
3.75
4.50
5.25
6.00
6.75
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
2
4
6
8
10
12
14
16
18
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
2
3
4
5
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
I
C
= 25A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGR72N60A3H1
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
10
20
30
40
50
60
70
80
90
100
110
120
0 5 10 15 20 25 30 35
R
G
- Ohms
t
r i
- Nanoseconds
10
20
30
40
50
60
70
80
90
100
110
120
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 25A
I
C
= 50A
I
C
= 100A
Fig. 19 . Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
70
80
90
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
r i
- Nanoseconds
26
27
28
29
30
31
32
33
34
35
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive Turn-on Switching Tim es vs.
Junction Temperature
10
20
30
40
50
60
70
80
90
100
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
26
27
28
29
30
31
32
33
34
35
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
I
C
= 25A
I
C
= 50A
I
C
= 100A
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2013 IXYS CORPORATION, All Rights Reserved
IXGR72N60A3H1
IXYS REF: G_72N60A3(76)04-23-09-C
Fig. 26 Maxim um T ransient Th ermal Impedance Junction to Case (for Diode)
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width [s]
Z (th )J C - [ ºC / W ]
Fig. 21 Forward Current IF vs. VFFig. 22 Typ. Reverse Recovery
Charge Qrr
Fig. 24 Typ. Dynamic Parameters
Qrr, IRM
Fig. 25 Typ Recovery Time trr
Fig. 23 Typ. Peak Reverse
Current IRM
