HSMS-2850-TR1G - Agilent / Hewlett-Packard

Surface Mount Zero Bias

Schottky Detector Diodes

Technical Data

HSMS-285x Series

SOT-23/SOT-143 Package

Lead Code Identification

(top view)

Description

Agilent’s HSMS-285x family of

zero bias Schottky detector

diodes has been designed and

optimized for use in small signal

(Pin < -20 dBm) applications at

frequencies below 1.5 GHz. They

are ideal for RF/ID and RF Tag

applications where primary (DC

bias) power is not available.

Important Note: For detector

applications with input power

levels greater than –20 dBm, use

the HSMS-282x series at frequen-

cies below 4.0 GHz, and the

HSMS-286x series at frequencies

above 4.0 GHz. The HSMS-285x

series IS NOT RECOMMENDED

for these higher power level

applications.

Available in various package

configurations, these detector

diodes provide low cost solutions

to a wide variety of design prob-

lems. Agilent’s manufacturing

techniques assure that when two

diodes are mounted into a single

package, they are taken from

adjacent sites on the wafer,

assuring the highest possible

degree of match.

SOT-323 Package Lead

Code Identification

(top view)

Features

• Surface Mount SOT-23/

SOT-143 Packages

• Miniature SOT-323 and

SOT-363 Packages

• High Detection Sensitivity:

up to 50 mV/µW at 915 MHz

• Low Flicker Noise:

-162 dBV/Hz at 100 Hz

• Low FIT (Failure in Time)

Rate*

• Tape and Reel Options

Available

• Matched Diodes for

Consistent Performance

• Better Thermal

Conductivity for Higher

Power Dissipation

• Lead-free Option Available

* For more information see the Surface

Mount Schottky Reliability Data Sheet.

SOT-363 Package Lead

Code Identification

(top view)

UNCONNECTED

PAIR

SERIES

SINGLE

SERIES

SINGLE

BRIDGE

QUAD

UNCONNECTED

TRIO

123

654

123

654

Pin Connections and

Package Marking

Notes:

1. Package marking provides orienta-

tion and identification.

2. See “Electrical Specifications” for

appropriate package marking.

PLx

SOT-23/SOT-143 DC Electrical Specifications, T

C = +25°C, Single Diode

Part Package Maximum Typical

Number Marking Lead Forward Voltage Capacitance

HSMS- Code[1] Code Configuration VF (mV) CT (pF)

2850 P0 0 Single 150 250 0.30

2852 P2 2 Series Pair[2,3]

2855 P5 5 Unconnected Pair[2,3]

Test IF = 0.1 mA IF = 1.0 mA VR = –0.5 V to –1.0V

Conditions f = 1 MHz

Notes:

1. Package marking code is in white.

2. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.

3. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.

RF Electrical Specifications, TC = +25°C, Single Diode

Part Number Typical Tangential Sensitivity Typical Voltage Sensitivity Typical Video

HSMS- TSS (dBm) @ f = 915 MHz γγ

γγ

γ (mV/µW) @ f = 915 MHz Resistance RV (KΩ)

2850 –57 40 8.0

2852

2855

285B

285C

285L

285P

Test Video Bandwidth = 2 MHz Power in = –40 dBm

Conditions Zero Bias RL = 100 KΩ, Zero Bias Zero Bias

SOT-323/SOT-363 DC Electrical Specifications, T

C = +25°C, Single Diode

Part Package Maximum Typical

Number Marking Lead Forward Voltage Capacitance

HSMS- Code[1] Code Configuration VF (mV) CT (pF)

285B P0 B Single[2] 150 250 0.30

285C P2 C Series Pair [2,3]

285L PL L Unconnected Trio

285P PP P Bridge Quad

Test IF = 0.1 mA IF = 1.0 mA VR = 0.5 V to –1.0V

Conditions f = 1 MHz

Notes:

1. Package marking code is laser marked.

2. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.

3. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.

Equivalent Linear Circuit Model

HSMS-285x chip

SPICE Parameters

Parameter Units HSMS-285x

BVV 3.8

CJ0 pF 0.18

EGeV 0.69

IBV A3 E-4

ISA3 E-6

N 1.06

RSΩ25

PB (VJ) V 0.35

PT (XTI) 2

M 0.5

Absolute Maximum Ratings, TC = +25°C, Single Diode

Symbol Parameter Unit Absolute Maximum[1]

SOT-23/143 SOT-323/363

PIV Peak Inverse Voltage V 2.0 2.0

TJJunction Temperature °C 150 150

TSTG Storage Temperature °C -65 to 150 -65 to 150

TOP Operating Temperature °C -65 to 150 -65 to 150

θjc Thermal Resistance[2] °C/W 500 150

Notes:

1. Operation in excess of any one of these conditions may result in

permanent damage to the device.

2. TC = +25°C, where TC is defined to be the temperature at the package

pins where contact is made to the circuit board.

ESD WARNING:

Handling Precautions

Should Be Taken To Avoid

Static Discharge.

Rj = 8.33 X 10-5 nT

Ib + Is

where

Ib = externally applied bias current in amps

Is = saturation current (see table of SPICE parameters)

T = temperature, °K

n = ideality factor (see table of SPICE parameters)

Note:

To effectively model the packaged HSMS-285x product,

please refer to Application Note AN1124.

RS = series resistance (see Table of SPICE parameters)

Cj = junction capacitance (see Table of SPICE parameters)

Typical Parameters, Single Diode

Figure 1. Typical Forward Current

vs. Forward Voltage.

Figure 2. +25°C Output Voltage vs.

Input Power at Zero Bias.

Figure 3. +25°C Expanded Output

Voltage vs. Input Power. See Figure 2.

Figure 4. Output Voltage vs.

Temperature.

IF – FORWARD CURRENT (mA)

0.01

VF – FORWARD VOLTAGE (V)

0.8 1.0

100

0.1

0.2 1.8

1.4

0.4 0.6 1.2 1.6

VOLTAGE OUT (mV)

-50

0.1

POWER IN (dBm)

-30 -20

10000

-40 0

100

-10

1000

RL = 100 KΩ

DIODES TESTED IN FIXED-TUNED

FR4 MICROSTRIP CIRCUITS.

915 MHz

VOLTAGE OUT (mV)

-50

0.3

POWER IN (dBm)

-30

-40

RL = 100 KΩ

915 MHz

DIODES TESTED IN FIXED-TUNED

FR4 MICROSTRIP CIRCUITS.

OUTPUT VOLTAGE (mV)

0.9

TEMPERATURE (°C)

40 50

3.1

2.1

1.5

10 100

2.5

20 30 70 9060

1.1

1.3

1.7

1.9

2.3

2.7

2.9

MEASUREMENTS MADE USING A

FR4 MICROSTRIP CIRCUIT.

FREQUENCY = 2.45 GHz

PIN = -40 dBm

RL = 100 KΩ

Applications Information

Introduction

Agilent’s HSMS-285x family of

Schottky detector diodes has been

developed specifically for low

cost, high volume designs in small

signal (Pin < -20 dBm) applica-

tions at frequencies below

1.5 GHz. At higher frequencies,

the DC biased HSMS-286x family

should be considered.

In large signal power or gain con-

trol applications (Pin > -20 dBm),

the HSMS-282x and HSMS-286x

products should be used. The

HSMS-285x zero bias diode is not

designed for large signal designs.

Schottky Barrier Diode

Characteristics

Stripped of its package, a

Schottky barrier diode chip

consists of a metal-semiconductor

barrier formed by deposition of a

metal layer on a semiconductor.

The most common of several

different types, the passivated

diode, is shown in Figure 5, along

with its equivalent circuit.

Figure 5. Schottky Diode Chip.

RS is the parasitic series

resistance of the diode, the sum of

the bondwire and leadframe

resistance, the resistance of the

bulk layer of silicon, etc. RF

energy coupled into RS is lost as

heat — it does not contribute to

the rectified output of the diode.

CJ is parasitic junction capaci-

tance of the diode, controlled by

the thickness of the epitaxial layer

and the diameter of the Schottky

contact. R j is the junction

resistance of the diode, a function

of the total current flowing

through it.

8.33 X 10-5 nT

Rj = –––––––––––– = RV – R s

IS + Ib

0.026

= ––––– at 25°C

IS + Ib

where

n = ideality factor (see table of

SPICE parameters)

T = temperature in °K

IS = saturation current (see

table of SPICE parameters)

Ib = externally applied bias

current in amps

IS is a function of diode barrier

height, and can range from

picoamps for high barrier diodes

to as much as 5 µA for very low

barrier diodes.

The Height of the Schottky

Barrier

The current-voltage characteristic

of a Schottky barrier diode at

room temperature is described by

the following equation:

V - IRS

I = IS (exp (––––––) - 1)

0.026

On a semi-log plot (as shown in

the Agilent catalog) the current

graph will be a straight line with

inverse slope 2.3 X 0.026 = 0.060

volts per cycle (until the effect of

RS is seen in a curve that droops

at high current). All Schottky

diode curves have the same slope,

but not necessarily the same value

of current for a given voltage. This

is determined by the saturation

current, IS, and is related to the

barrier height of the diode.

Through the choice of p-type or

n-type silicon, and the selection of

metal, one can tailor the charac-

teristics of a Schottky diode.

Barrier height will be altered, and

at the same time CJ and RS will be

changed. In general, very low

barrier height diodes (with high

values of IS, suitable for zero bias

applications) are realized on

p-type silicon. Such diodes suffer

from higher values of RS than do

the n-type. Thus, p-type diodes are

generally reserved for small signal

detector applications (where very

high values of RV swamp out high

RS) and n-type diodes are used for

mixer applications (where high

L.O. drive levels keep RV low).

Measuring Diode Parameters

The measurement of the five

elements which make up the low

frequency equivalent circuit for a

packaged Schottky diode (see

Figure 6) is a complex task.

Various techniques are used for

each element. The task begins

with the elements of the diode

chip itself.

FOR THE HSMS-285x SERIES

= 0.08 pF

= 2 nH

= 0.18 pF

= 25 Ω

= 9 KΩ

Figure 6. Equivalent Circuit of a

Schottky Diode.

;;

METAL

SCHOTTKY JUNCTION

PASSIVATION PASSIVATION

N-TYPE OR P-TYPE EPI LAYER

N-TYPE OR P-TYPE SILICON SUBSTRATE

CROSS-SECTION OF SCHOTTKY

BARRIER DIODE CHIP

EQUIVALENT

CIRCUIT

RS is perhaps the easiest to

measure accurately. The V-I curve

is measured for the diode under

forward bias, and the slope of the

curve is taken at some relatively

high value of current (such as

5 mA). This slope is converted

into a resistance Rd.

0.026

RS = Rd – ––––––

RV and CJ are very difficult to

measure. Consider the impedance

of CJ = 0.16 pF when measured at

1 MHz — it is approximately

1MΩ. For a well designed zero

bias Schottky, RV is in the range of

5 to 25 KΩ, and it shorts out the

junction capacitance. Moving up

to a higher frequency enables the

measurement of the capacitance,

but it then shorts out the video

resistance. The best measurement

technique is to mount the diode in

series in a 50 Ω microstrip test

circuit and measure its insertion

loss at low power levels (around

-20 dBm) using an HP8753C

network analyzer. The resulting

display will appear as shown in

Figure 7.

INSERTION LOSS (dB)

-40

FREQUENCY (MHz)

-10

-25

3000

-20

10 1000100

-35

-30

-15

50 Ω

0.16 pF

50 Ω

50 Ω9 KΩ

Figure 7. Measuring C

and R

At frequencies below 10 MHz, the

video resistance dominates the

loss and can easily be calculated

from it. At frequencies above

300 MHz, the junction capacitance

sets the loss, which plots out as a

straight line when frequency is

plotted on a log scale. Again,

calculation is straightforward.

LP and CP are best measured on

the HP8753C, with the diode

terminating a 50 Ω line on the

input port. The resulting tabula-

tion of S11 can be put into a

microwave linear analysis

program having the five element

equivalent circuit with RV, CJ and

RS fixed. The optimizer can then

adjust the values of LP and CP

until the calculated S11 matches

the measured values. Note that

extreme care must be taken to

de-embed the parasitics of the

50 Ω test fixture.

Detector Circuits

When DC bias is available,

Schottky diode detector circuits

can be used to create low cost RF

and microwave receivers with a

sensitivity of -55 dBm to

-57 dBm.[1] These circuits can take

a variety of forms, but in the most

simple case they appear as shown

in Figure 8. This is the basic

detector circuit used with the

HSMS-285x family of diodes.

In the design of such detector

circuits, the starting point is the

equivalent circuit of the diode, as

shown in Figure 6.

Of interest in the design of the

video portion of the circuit is the

diode’s video impedance— the

other four elements of the equiv-

alent circuit disappear at all

reasonable video frequencies. In

general, the lower the diode’s

video impedance, the better the

design.

VIDEO

OUT

Z-MATCH

NETWORK

VIDEO

OUT

Z-MATCH

NETWORK

The situation is somewhat more

complicated in the design of the

RF impedance matching network,

which includes the package

inductance and capacitance

(which can be tuned out), the

series resistance, the junction

capacitance and the video

resistance. Of these five elements

of the diode’s equivalent circuit,

the four parasitics are constants

and the video resistance is a

function of the current flowing

through the diode.

26,000

RV ≈ ––––––

IS + Ib

where

IS = diode saturation current

in µA

Ib = bias current in µA

Saturation current is a function of

the diode’s design,[2] and it is a

constant at a given temperature.

For the HSMS-285x series, it is

typically 3 to 5 µA at 25°C.

Saturation current sets the detec-

tion sensitivity, video resistance

and input RF impedance of the

zero bias Schottky detector diode.

[1] Agilent Application Note 923, Schottky Barrier Diode Video Detectors.

[2] Agilent Application Note 969, An Optimum Zero Bias Schottky Detector Diode.

Figure 8. Basic Detector Circuits.

Since no external bias is used

with the HSMS-285x series, a

single transfer curve at any given

frequency is obtained, as shown in

Figure 2.

The most difficult part of the

design of a detector circuit is the

input impedance matching

network. For very broadband

detectors, a shunt 60 Ω resistor

will give good input match, but at

the expense of detection

sensitivity.

When maximum sensitivity is

required over a narrow band of

frequencies, a reactive matching

network is optimum. Such net-

works can be realized in either

lumped or distributed elements,

depending upon frequency, size

constraints and cost limitations,

but certain general design

principals exist for all types.[3]

Design work begins with the RF

impedance of the HSMS-285x

series, which is given in Figure 9.

1 GHz

0.2 0.6 1

Figure 9. RF Impedance of the

HSMS-285x Series at -40 dBm.

915 MHz Detector Circuit

Figure 10 illustrates a simple

impedance matching network for

a 915 MHz detector.

65nH

100 pF

VIDEO

OUT

INPUT

WIDTH = 0.050"

LENGTH = 0.065"

WIDTH = 0.015"

LENGTH = 0.600"

TRANSMISSION LINE

DIMENSIONS ARE FOR

MICROSTRIP ON

0.032" THICK FR-4.

Figure 10. 915 MHz Matching

Network for the HSMS-285x Series

at Zero Bias.

A 65 nH inductor rotates the

impedance of the diode to a point

on the Smith Chart where a shunt

inductor can pull it up to the

center. The short length of 0.065"

wide microstrip line is used to

mount the lead of the diode’s

SOT-323 package. A shorted shunt

stub of length <λ/4 provides the

necessary shunt inductance and

simultaneously provides the

return circuit for the current gen-

erated in the diode. The imped-

ance of this circuit is given in

Figure 11.

FREQUENCY (GHz): 0.9-0.93

Figure 11. Input Impedance.

The input match, expressed in

terms of return loss, is given in

Figure 12.

RETURN LOSS (dB)

0.9

-20

FREQUENCY (GHz)

0.915

-10

-15

0.93

-5

Figure 12. Input Return Loss.

As can be seen, the band over

which a good match is achieved is

more than adequate for 915 MHz

RFID applications.

Voltage Doublers

To this point, we have restricted

our discussion to single diode

detectors. A glance at Figure 8,

however, will lead to the sugges-

tion that the two types of single

diode detectors be combined into

a two diode voltage doubler[4]

(known also as a full wave recti-

fier). Such a detector is shown in

Figure 13.

VIDEO OUT

Z-MATCH

NETWORK

RF IN

Figure 13. Voltage Doubler Circuit.

Such a circuit offers several

advantages. First the voltage

outputs of two diodes are added

in series, increasing the overall

value of voltage sensitivity for the

network (compared to a single

diode detector). Second, the RF

impedances of the two diodes are

added in parallel, making the job

of reactive matching a bit easier.

[3] Agilent Application Note 963, Impedance Matching Techniques for Mixers and Detectors.

[4] Agilent Application Note 956-4, Schottky Diode Voltage Doubler.

[5] Agilent Application Note 965-3, Flicker Noise in Schottky Diodes.

Such a circuit can easily be

realized using the two series di-

odes in the HSMS-285C.

Flicker Noise

Reference to Figure 5 will show

that there is a junction of metal,

silicon, and passivation around

the rim of the Schottky contact. It

is in this three-way junction that

flicker noise[5] is generated. This

noise can severely reduce the

sensitivity of a crystal video

receiver utilizing a Schottky

detector circuit if the video

frequency is below the noise

corner. Flicker noise can be

substantially reduced by the

elimination of passivation, but

such diodes cannot be mounted in

non-hermetic packages. p-type

silicon Schottky diodes have the

least flicker noise at a given value

of external bias (compared to

n-type silicon or GaAs). At zero

bias, such diodes can have

extremely low values of flicker

noise. For the HSMS-285x series,

the noise temperature ratio is

given in Figure 14.

NOISE TEMPERATURE RATIO (dB)

FREQUENCY (Hz)

-510 100 1000 10000 100000

Figure 14. Typical Noise Temperature

Ratio.

Noise temperature ratio is the

quotient of the diode’s noise

power (expressed in dBV/Hz) di-

vided by the noise power of an

ideal resistor of resistance R = RV.

For an ideal resistor R, at 300°K,

the noise voltage can be com-

puted from

v = 1.287 X 10-10 √R volts/Hz

which can be expressed as

20 log10 v dBV/Hz

Thus, for a diode with RV = 9 KΩ,

the noise voltage is 12.2 nV/Hz or

-158 dBV/Hz. On the graph of

Figure 14, -158 dBV/Hz would

replace the zero on the vertical

scale to convert the chart to one

of absolute noise voltage vs.

frequency.

Diode Burnout

Any Schottky junction, be it an RF

diode or the gate of a MESFET, is

relatively delicate and can be

burned out with excessive RF

power. Many crystal video receiv-

ers used in RFID (tag) applica-

tions find themselves in poorly

controlled environments where

high power sources may be

present. Examples are the areas

around airport and FAA radars,

nearby ham radio operators, the

vicinity of a broadcast band trans-

mitter, etc. In such environments,

the Schottky diodes of the

receiver can be protected by a de-

vice known as a limiter diode.[6]

Formerly available only in radar

warning receivers and other high

cost electronic warfare applica-

tions, these diodes have been

adapted to commercial and

consumer circuits.

Agilent offers a complete line of

surface mountable PIN limiter

diodes. Most notably, our

HSMP-4820 (SOT-23) can act as a

very fast (nanosecond) power-

sensitive switch when placed

between the antenna and the

Schottky diode, shorting out the

RF circuit temporarily and

reflecting the excessive RF energy

back out the antenna.

Assembly Instructions

SOT-323 PCB Footprint

A recommended PCB pad layout

for the miniature SOT-323 (SC-70)

package is shown in Figure 15

(dimensions are in inches). This

layout provides ample allowance

for package placement by auto-

mated assembly equipment

without adding parasitics that

could impair the performance.

Figure 16 shows the pad layout

for the six-lead SOT-363.

0.026

0.035

0.07

0.016

Figure 15. PCB Pad Layout

(dimensions in inches).

0.026

0.075

0.016

0.035

Figure 16. PCB Pad Layout

(dimensions in inches).

[6] Agilent Application Note 1050, Low Cost, Surface Mount Power Limiters.

SMT Assembly

Reliable assembly of surface

mount components is a complex

process that involves many

material, process, and equipment

factors, including: method of

heating (e.g., IR or vapor phase

reflow, wave soldering, etc.)

circuit board material, conductor

thickness and pattern, type of

solder alloy, and the thermal

conductivity and thermal mass of

components. Components with a

low mass, such as the SOT

packages, will reach solder

reflow temperatures faster than

those with a greater mass.

Agilent’s diodes have been

qualified to the time-temperature

profile shown in Figure 17. This

profile is representative of an IR

reflow type of surface mount

assembly process.

TIME (seconds)

MAX

TEMPERATURE (°C)

100

150

200

250

Preheat

Zone Cool Down

Zone

Reflow

Zone

120 180 240 300

Figure 17. Surface Mount Assembly Profile.

After ramping up from room

temperature, the circuit board

with components attached to it

(held in place with solder paste)

passes through one or more

preheat zones. The preheat zones

increase the temperature of the

board and components to prevent

thermal shock and begin evapo-

rating solvents from the solder

paste. The reflow zone briefly

elevates the temperature suffi-

ciently to produce a reflow of the

solder.

The rates of change of tempera-

ture for the ramp-up and cool-

down zones are chosen to be low

enough to not cause deformation

of the board or damage to compo-

nents due to thermal shock. The

maximum temperature in the

reflow zone (TMAX) should not

exceed 235°C.

These parameters are typical for a

surface mount assembly process

for Agilent diodes. As a general

guideline, the circuit board and

components should be exposed

only to the minimum temperatures

and times necessary to achieve a

uniform reflow of solder.

Part Number Ordering Information

No. of

Part Number Devices Container

HSMS-285x-TR2* 10000 13" Reel

HSMS-285x-TR1* 3000 7" Reel

HSMS-285x-BLK * 100 antistatic bag

where x = 0, 2, 5, B, C, L and P for HSMS-285x.

For lead-free option, the part number will have the

character "G" at the end, eg. HSMS-285x-TR2G for a

10,000 lead-free reel.

Package Dimensions

Outline 23 (SOT-23)

Outline 143 (SOT-143)

SIDE VIEW

TOP VIEW

END VIEW

DIMENSIONS ARE IN MILLIMETERS

(

INCHES

)

1.02 (0.040)

0.89 (0.035)

0.60 (0.024)

0.45 (0.018)

1.40 (0.055)

1.20 (0.047)

2.65 (0.104)

2.10 (0.083)

3.06 (0.120)

2.80 (0.110)

2.04 (0.080)

1.78 (0.070)

1.02 (0.041)

0.85 (0.033)

0.152 (0.006)

0.066 (0.003)

0.10 (0.004)

0.013 (0.0005)

0.69 (0.027)

0.45 (0.018)

0.54 (0.021)

0.37 (0.015)

X X X

PACKAGE

MARKING

CODE (XX)

DATE CODE (X)

0.69 (0.027)

0.45 (0.018)

1.40 (0.055)

1.20 (0.047)

2.65 (0.104)

2.10 (0.083)

0.60 (0.024)

0.45 (0.018) 0.54 (0.021)

0.37 (0.015)

0.10 (0.004)

0.013 (0.0005)

1.04 (0.041)

0.85 (0.033)

0.92 (0.036)

0.78 (0.031)

2.04 (0.080)

1.78 (0.070)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

0.15 (0.006)

0.09 (0.003)

3.06 (0.120)

2.80 (0.110)

PACKAGE

MARKING

CODE (XX)

X X X

DATE CODE (X)

Outline SOT-363 (SC-70 6 Lead)

Outline SOT-323 (SC-70 3 Lead)

2.20 (0.087)

2.00 (0.079)

1.35 (0.053)

1.15 (0.045)

1.30 (0.051)

REF.

0.650 BSC (0.025)

2.20 (0.087)

1.80 (0.071)

0.10 (0.004)

0.00 (0.00)

0.25 (0.010)

0.15 (0.006)

1.00 (0.039)

0.80 (0.031) 0.20 (0.008)

0.10 (0.004)

0.30 (0.012)

0.10 (0.004)

0.30 REF.

10°

0.425 (0.017)

TYP.

DIMENSIONS ARE IN MILLIMETERS

(

INCHES

)

PACKAGE

MARKING

CODE (XX)

X X X

DATE CODE (X)

2.20 (0.087)

2.00 (0.079)

1.35 (0.053)

1.15 (0.045)

1.30 (0.051)

REF.

0.650 BSC (0.025)

2.20 (0.087)

1.80 (0.071)

0.10 (0.004)

0.00 (0.00)

0.25 (0.010)

0.15 (0.006)

1.00 (0.039)

0.80 (0.031)

0.20 (0.008)

0.10 (0.004)

0.30 (0.012)

0.10 (0.004)

0.30 REF.

10°

0.425 (0.017)

TYP.

DIMENSIONS ARE IN MILLIMETERS

(

INCHES

)

PACKAGE

MARKING

CODE (XX)

X X X

DATE CODE (X)

Device Orientation

USER

FEED

DIRECTION

COVER TAPE

CARRIER

TAPE

REEL

For Outline SOT-143

Note: "AB" represents package marking code.

"C" re

resents date code.

END VIE

8 mm

4 mm

TOP VIEW

ABC ABC ABC ABC

For Outlines SOT-23, -323

Note: "AB" represents package marking code.

"C" represents date code.

END VIE

8 mm

4 mm

TOP VIEW

ABC ABC ABC ABC

END VIE

8 mm

4 mm

TOP VIEW

Note: "AB" represents package marking code.

"C" represents date code.

ABC ABC ABC ABC

For Outline SOT-363

Tape Dimensions and Product Orientation

For Outline SOT-23

9° MAX

Ko 8° MAX

13.5° MAX

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

3.15 ± 0.10

2.77 ± 0.10

1.22 ± 0.10

4.00 ± 0.10

1.00 + 0.05

0.124 ± 0.004

0.109 ± 0.004

0.048 ± 0.004

0.157 ± 0.004

0.039 ± 0.002

CAVITY

DIAMETER

PITCH

POSITION

1.50 + 0.10

4.00 ± 0.10

1.75 ± 0.10

0.059 + 0.004

0.157 ± 0.004

0.069 ± 0.004

PERFORATION

WIDTH

THICKNESS

8.00 + 0.30 – 0.10

0.229 ± 0.013

0.315 + 0.012 – 0.004

0.009 ± 0.0005

CARRIER TAPE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

CAVITY TO PERFORATION

(LENGTH DIRECTION)

3.50 ± 0.05

2.00 ± 0.05

0.138 ± 0.002

0.079 ± 0.002

DISTANCE

BETWEEN

CENTERLINE

For Outline SOT-143

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

3.19 ± 0.10

2.80 ± 0.10

1.31 ± 0.10

4.00 ± 0.10

1.00 + 0.25

0.126 ± 0.004

0.110 ± 0.004

0.052 ± 0.004

0.157 ± 0.004

0.039 + 0.010

CAVITY

DIAMETER

PITCH

POSITION

1.50 + 0.10

4.00 ± 0.10

1.75 ± 0.10

0.059 + 0.004

0.157 ± 0.004

0.069 ± 0.004

PERFORATION

WIDTH

THICKNESS

8.00 + 0.30 – 0.10

0.254 ± 0.013

0.315+ 0.012 – 0.004

0.0100 ± 0.0005

CARRIER TAPE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

CAVITY TO PERFORATION

(LENGTH DIRECTION)

3.50 ± 0.05

2.00 ± 0.05

0.138 ± 0.002

0.079 ± 0.002

DISTANCE

9° MAX 9° MAX

www.agilent.com/semiconductors

For product information and a complete list of

distributors, please go to our web site.

For technical assistance call:

Americas/Canada: +1 (800) 235-0312 or

(916) 788-6763

Europe: +49 (0) 6441 92460

China: 10800 650 0017

Hong Kong: (65) 6756 2394

India, Australia, New Zealand: (65) 6755 1939

Japan: (+81 3) 3335-8152(Domestic/International), or

0120-61-1280(Domestic Only)

Korea: (65) 6755 1989

Singapore, Malaysia, Vietnam, Thailand, Philippines,

Indonesia: (65) 6755 2044

Taiwan: (65) 6755 1843

Data subject to change.

Obsoletes 5968-7457E

March 24, 2004

5989-0479EN

Tape Dimensions and Product Orientation

For Outlines SOT-323, -363

(CARRIER TAPE THICKNESS) T

(COVER TAPE THICKNESS)

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

2.40 ± 0.10

1.20 ± 0.10

4.00 ± 0.10

1.00 + 0.25

0.094 ± 0.004

0.047 ± 0.004

0.157 ± 0.004

0.039 + 0.010

CAVITY

DIAMETER

PITCH

POSITION

1.55 ± 0.05

4.00 ± 0.10

1.75 ± 0.10

0.061 ± 0.002

0.157 ± 0.004

0.069 ± 0.004

PERFORATION

WIDTH

THICKNESS

8.00 ± 0.30

0.254 ± 0.02

0.315 ± 0.012

0.0100 ± 0.0008

CARRIER TAPE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

CAVITY TO PERFORATION

(LENGTH DIRECTION)

3.50 ± 0.05

2.00 ± 0.05

0.138 ± 0.002

0.079 ± 0.002

DISTANCE

FOR SOT-323 (SC70-3 LEAD) An 8°C MAX

FOR SOT-363 (SC70-6 LEAD) 10°C MAX

ANGLE

WIDTH

TAPE THICKNESS

5.4 ± 0.10

0.062 ± 0.001

0.205 ± 0.004

0.0025 ± 0.00004

COVER TAPE