© 2008 IXYS CORPORATION, All rights reserved
GenX3TM 600V IGBT
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C (limited by leads) 75 A
IC110 TC = 110°C 72 A
ICM TC = 25°C, 1ms 400 A
SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 150 A
(RBSOA) Clamped inductive load @ ≤ 600V
PCTC = 25°C 540 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
DS99759B(07/08)
IXGH72N60A3
IXGT72N60A3
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 600 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES 75 μA
VGE = 0V TJ = 125°C 750 μA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 60A, VGE = 15V, Note 1 1.35 V
VCES = 600V
IC110 = 72A
VCE(sat) ≤≤
≤≤
≤ 1.35V
tfi(typ) = 250ns
TO-247 (IXGH)
GCEC (TAB)
TO-268 (IXGT)
GEC (TAB)
Ultra Low Vsat PT IGBT for
up to 5kHz switching
Features
zOptimized for low conduction losses
zSquare RBSOA
zInternational standard packages
Advantages
zHigh power density
zLow gate drive requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
zInrush Current Protection Circuits
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH72N60A3
IXGT72N60A3
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 48 76 S
Cies 6600 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 360 pF
Cres 80 pF
Qg 230 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 40 nC
Qgc 78 nC
td(on) 31 ns
tri 34 ns
Eon 1.38 mJ
td(off) 320 ns
tfi 250 ns
Eoff 3.5 mJ
td(on) 29 ns
tri 32 ns
Eon 2.6 mJ
td(off) 510 ns
tfi 375 ns
Eoff 6.5 mJ
RthJC 0.23 °C/W
RthCS 0.15 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
Terminals: 1 - Gate 2 - Drain
1 2 3
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3Ω
Inductive load, TJ = 125°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3Ω
© 2008 IXYS CORPORATION, All rights reserved
IXGH72N60A3
IXGT72N60A3
Fi g . 1. Ou tp u t C h ar acter i sti cs
@ 25ºC
0
20
40
60
80
100
120
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
330
012345678
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
11V
7V
9V
Fig. 3. Output Characteristics
@ 125ºC
0
20
40
60
80
100
120
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 120A
I
C
= 60A
I
C
= 30A
Fi g . 5. Co l l ect or -to -Emi tt er Vo l tag e
vs. Gate-to -Emitter Vo ltag e
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
56789101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 120A
60A
30A
T
J
= 25ºC
Fi g . 6. I n p ut Admi ttance
0
20
40
60
80
100
120
140
160
180
200
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH72N60A3
IXGT72N60A3
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200 220 240
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 60A
I
G
= 10 mA
Fi g . 9. C ap aci tan ce
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fig. 10. Rever se-Bia s Safe Op er at i n g Area
0
20
40
60
80
100
120
140
160
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 3
dV / dt < 10V / ns
Fi g . 11. Maxi mu m Tra n sie n t Th er mal I mp ed an ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: G_72N60A3 (76)3-25-08-B
© 2008 IXYS CORPORATION, All rights reserved
IXGH72N60A3
IXGT72N60A3
Fig. 17. Inductive Tu rn-off
Switching T imes vs. Junction T emperature
220
240
260
280
300
320
340
360
380
400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
220
260
300
340
380
420
460
500
540
580
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3 , V
GE
= 15V
V
CE
= 480V
I
C
= 25A, 50A, 100A
Fig. 12. Inductive Switching
Ener gy L os s vs. Gate Resistan ce
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35
R
G
- Ohms
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
9
E
on
- MilliJoules
Eoff Eon
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
I
C
= 25A
Fig. 15. Inductive Turn-off
Swit ch i n g Time s vs. Gate R e si stan ce
360
363
366
369
372
375
378
381
384
387
390
0 5 10 15 20 25 30 35
R
G
- Ohms
t
f
- Nanoseconds
400
500
600
700
800
900
1000
1100
1200
1300
1400
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
I
C
= 25A
Fig. 13. Inductive Switching
Ener g y L o ss vs. C o ll ector Cur r ent
0
2
4
6
8
10
12
14
16
18
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
0.00
0.75
1.50
2.25
3.00
3.75
4.50
5.25
6.00
6.75
E
on
- MilliJoules
Eoff Eon
- - - -
R
G
= 3 , V
GE
= 15V
V
CE
= 480V T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction T emperature
0
2
4
6
8
10
12
14
16
18
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
2
3
4
5
5
6
7
E
on
- MilliJoules
Eoff Eon
- - - -
R
G
= 3 , V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
I
C
= 25A
Fig. 16. Inductive T urn-off
Switching Times vs. Collector Current
220
240
260
280
300
320
340
360
380
400
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
f
- Nanoseconds
250
290
330
370
410
450
490
530
570
610
t
d(off)
- Nanoseconds
t f
td(off)
- - - -
R
G
= 3 , V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH72N60A3
IXGT72N60A3
IXYS REF: G_72N60A3 (76)3-25-08-B
Fig. 18. Inductive Turn-on
Switchi n g Ti mes vs. G ate R e si stance
10
20
30
40
50
60
70
80
90
100
110
120
0 5 10 15 20 25 30 35
RG - Ohms
t
r
- Nanoseconds
10
20
30
40
50
60
70
80
90
100
110
120
t
d(on)
- Nanoseconds
t
r
td(on)
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 25A
I
C
= 50A
I
C
= 100A
Fig. 19. Inductive Turn-on
Switch i n g Times vs. C o llecto r C u r r ent
0
10
20
30
40
50
60
70
80
90
20 30 40 50 60 70 80 90 100
IC - Amperes
t
r
- Nanoseconds
26
27
28
29
30
31
32
33
34
35
t
d(on)
- Nanoseconds
t r
td(on)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive Turn-on
Switchi n g Ti mes vs. J u n ctio n Temp er a tu r e
10
20
30
40
50
60
70
80
90
100
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
r
- Nanoseconds
26
27
28
29
30
31
32
33
34
35
t
d(on)
- Nanoseconds
t
r
td(on)
- - - -
R
G
= 3
Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 25A
I
C
= 50A
I
C
= 100A
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