November 1998 FDG6320C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V, RDS(ON) = 5.0 @ VGS= 2.7 V. P-Ch -0.14 A, -25V, RDS(ON) = 10 @ VGS= -4.5V, RDS(ON) = 13 @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). SC70-6 SuperSOTTM-6 SOT-23 S2 G2 .20 D1 SC70-6 pin 1 Absolute Maximum Ratings Symbol Parameter VDSS S1 G1 SO-8 SOT-8 SOIC-14 1 6 2 5 3 4 D2 TA = 25oC unless other wise noted N-Channel P-Channel Units Drain-Source Voltage 25 -25 V VGSS Gate-Source Voltage 8 -8 V ID Drain Current - Continuous 0.22 -0.14 A - Pulsed 0.65 -0.4 PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Ranger ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) (Note 1) 0.3 W -55 to 150 C 6 kV 415 C/W THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (c) 1998 Fairchild Semiconductor Corporation (Note 1) FDG6320C Rev. D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type Min VGS = 0 V, ID = 250 A N-Ch 25 VGS = 0 V, ID = -250 A P-Ch -25 ID = 250 A, Referenced to 25 oC N-Ch 25 ID = -250 A, Referenced to 25 oC P-Ch -19 N-Ch Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V, IDSS Zero Gate Voltage Drain Current VDS =-20 V, VGS = 0 V, IGSS Gate - Body Leakage Current V mV/oC 1 TJ = 55C A 10 P-Ch -1 VGS = 8 V, VDS = 0 V N-Ch 100 nA VGS = -8 V, VDS = 0 V P-Ch -100 nA VDS = VGS, ID = 250 A N-Ch 0.65 0.85 1.5 V VDS = VGS, ID = -250 A P-Ch -0.65 -0.82 -1.5 TJ = 55C A -10 ON CHARACTERISTICS (Note 2) VGS(th) VGS(th)/TJ Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient ID = 250 A, Referenced to 25 oC N-Ch -2.1 ID = -250 A, Referenced to 25 C P-Ch 2.1 VGS = 4.5 V, ID = 0.22 A N-Ch o RDS(ON) Static Drain-Source On-Resistance TJ =125C VGS = 2.7 V, ID = 0.19 A VGS = -4.5 V, ID = -0.14 A P-Ch TJ =125C VGS = -2.7 V, ID = -0.05 A ID(ON) On-State Drain Current gFS Forward Transconductance 2.6 4 5.3 7 3.7 5 7.3 10 11 17 10.4 13 N-Ch 0.22 VGS = -4.5 V, VDS = -5 V P-Ch -0.14 VDS = 5 V, ID = 0.22 A N-Ch 0.2 VDS = -5 V, ID = -0.14 A P-Ch 0.12 N-Channel N-Ch 9.5 VDS = 10 V, VGS = 0 V, P-Ch 12 f = 1.0 MHz N-Ch 6 P-Channel P-Ch 7 VDS = -10 V, VGS = 0 V, N-Ch 1.3 f = 1.0 MHz P-Ch 1.5 VGS = 4.5 V, VDS = 5 V mV/oC A S DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance pF FDG6320C Rev. D Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type tD(on) Turn - On Delay Time N-Channel VDD = 5 V, ID = 0.5 A , Min Typ Max Units N-Ch 5 12 nS P-Ch 5 12 tr Turn - On Rise Time VGS = 4.5 V, RGEN = 50 N-Ch 4.5 10 P-Ch 8 16 tD(off) Turn - Off Delay Time P-Channel N-Ch 4 8 VDD = -5 V, ID = -0.5 A, P-Ch 9 18 tf Turn - Off Fall Time VGS = -4.5 V, RGEN = 50 N-Ch 3.2 7 P-Ch 5 12 Qg Total Gate Charge N-Channel N-Ch 0.29 0.4 VDS = 5 V, ID = 0.22 A, P-Ch 0.22 0.31 Qgs Gate-Source Charge VGS = 4.5 V N-Ch 0.12 P- Channel P-Ch 0.12 Qgd Gate-Drain Charge VDS = -5 V, ID = -0.14 A, N-Ch 0.03 VGS = -4.5 V P-Ch 0.05 nS nS nS nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage N-Ch 0.25 P-Ch VGS = 0 V, IS = 0.5 A VGS = 0 V, IS = -0.5 A (Note 2) (Note 2) A -0.25 N-Ch 0.8 1.2 P-Ch -0.8 -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. RJA = 415OC/W on minimum mounting pad on FR-4 board in still air. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDG6320C Rev. D Typical Electrical Characteristics: N-Channel 5 VGS =4.5V 3.5V R DS(ON), NORMALIZED 0.4 3.0V 2.7V 0.3 2.5V 0.2 2.0V 0.1 0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 0.5 4.5 1 2 3 4 2.7V 3.0V 3.5 3.5V 3 4.0V 5 0 0.1 Figure 1. On-Region Characteristics. 0.3 0.4 20 I D = 0.22A 1.6 RDS(ON), ON-RESISTANCE(OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 V GS = 4.5V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) 125 ID = 0.10A 16 12 8 TA =125C 4 25C 0 150 1 2 J 3 4 5 VGS ,GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. TJ = -55C VDS = 5V I S , REVERSE DRAIN CURRENT (A) 0.4 0.2 I D , DRAIN CURRENT (A) 5.0V I D , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) 25C 125C 0.15 0.1 0.05 0 0.5 4.5V 2.5 2 0 VGS = 2.5V 4 VGS = 0V 0.1 TJ = 125C 0.01 25C 0.0001 1 1.5 2 2.5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 -55C 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6320C.Rev D Typical Electrical Characteristics: N-Channel (continued) 30 VGS , GATE-SOURCE VOLTAGE (V) 6 VDS = 5V I D = 0.22A 10V CAPACITANCE (pF) 5 4 3 2 15 Ciss 8 Coss 5 Crss f = 1 MHz VGS = 0 V 3 1 2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.3 1 3 1 50 IT IM )L ON ( S RD 10 s 1s 0.1 10 s 0.01 0.4 V GS = 4.5V SINGLE PULSE RJA = 415 C/W T A = 25C 0.8 2 SINGLE PULSE R JA=415C/W TA = 25C 40 0m POWER (W) I D , DRAIN CURRENT (A) 10m s 0.03 25 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 0.3 10 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) 30 20 DC 10 5 10 25 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 40 0 0.0001 0.001 0.01 0.1 1 10 200 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. FDG6320C.Rev D Typical Electrical Characteristics: P-Channel 2.5 VGS = -4.5V -3.5V R DS(ON), NORMALIZED -3.0V 0.15 -2.7V -2.5V 0.1 -2.0V 0.05 DRAIN-SOURCE ON-RESISTANCE -ID , DRAIN-SOURCE CURRENT (A) 0.2 0 0 1 2 3 VGS = -2.0V 2 -2.7V -3.0V 1.5 -3.5V -4.0V -4.5V 1 0.5 4 -2.5V -V DS , DRAIN-SOURCE VOLTAGE (V) 0 0.05 0.1 0.15 -I D, DRAIN CURRENT (A) 0.2 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. Figure 11. On-Region Characteristics. R DS(ON) , ON-RESISTANCE (OHM) 25 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 I D = -0.14A 1.4 V GS = -4.5V 1.2 1 0.8 0.6 -50 I D = -0.07A 20 15 TA = 125C 10 TA = 25C 5 0 1.5 -25 0 25 50 75 100 125 2 150 TJ , JUNCTION TEMPERATURE (C) Figure 13. On-Resistance Variation with Temperature. 0.12 -IS , REVERSE DRAIN CURRENT (A) -ID , DRAIN CURRENT (A) TA = -55C 25C 125C 0.1 0.08 0.06 0.04 0.02 0 0 1 2 3 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 5 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 0.14 VDS = -5.0V 2.5 3 3.5 4 4.5 -VGS , GATE TO SOURCE VOLTAGE (V) 4 0.3 VGS = 0V 0.1 TA = 125C 25C -55C 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6320C.Rev D Typical Electrical Characteristics: P-Channel (continued) 40 I D = -0.14A 20 VDS = -5V -10V -15V 6 CAPACITANCE (pF) -VGS , GATE-SOURCE VOLTAGE (V) 8 4 Ciss 10 Coss 5 3 2 1 0.5 0.1 0 0 0.1 0.2 0.3 0.4 0.5 Crss f = 1 MHz VGS = 0 V 0.2 Figure 17. Gate Charge Characteristics. 1 2 5 10 20 Figure 18. Capacitance Characteristics. 1 50 N) S(O RD 0.3 10m s IT LIM 10 s 1s 0.1 10s DC VGS = -4.5V SINGLE PULSE RJA = See Note 1b TA = 25C 0.03 2 3 30 20 10 0.005 1 SINGLE PULSE R JA=415C/W TA = 25C 40 0m POWER (W) -I D , DRAIN CURRENT (A) 0.5 -VDS , DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) 5 10 20 - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. 40 0 0.0001 0.001 0.01 0.1 1 10 200 SINGLE PULSE TIME (SEC) Figure 20. Single Pulse Maximum Power Dissipation. FDG6320C.Rev D Typical Thermal Characteristics: N & P-Channel (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 0.02 0.01 R JA (t) = r(t) * R JA R JA =415 C/W 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * R JA (t) Single Pulse Duty Cycle, D = t 1/ t 2 0.005 0.002 0.0001 0.001 0.01 0.1 1 10 100 200 t 1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design. FDG6320C.Rev D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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