2012-08-21
1
SMBT3904...PN
NPN / PNP Silicon Switching Transistor Array
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN / PNP
transistor in one package
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
SMBT3904PN
SMBT3904UPN
EHA07177
654
321
C1 B2 E2
C2B1E1
TR1 TR2
Type Marking Pin Configuration Package
SMBT3904PN
SMBT3904UPN
s3P
s3P
1=E
1=E
2=B
2=B
3=C
3=C
4=E
4=E
5=B
5=B
6=C
6=C
SOT363
SC74
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V
Collector-base voltage VCBO 40
Emitter-base voltage VEBO 6
Collector current IC200 mA
Total power dissipation-
TS ≤ 115 °C, SMBT3904PN
TS ≤ 105 °C, SMBT3904UPN
Ptot
250
330
mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
2012-08-21
2
SMBT3904...PN
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
SMBT3904PN
SMBT3904UPN
RthJS
≤ 140
≤ 135
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 40 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 40 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6 - -
Collector-base cutoff current
VCB = 30 V, IE = 0
ICBO - - 50 nA
DC current gain2)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
40
70
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
-
-
-
-
0.25
0.4
V
Base emitter saturation voltage2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
0.65
-
-
-
0.85
0.95
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
2012-08-21
3
SMBT3904...PN
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT250 - - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - - 3.5 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - - 10
Delay time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
td- - 35 ns
Rise time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
tr- - 35
Storage time
VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA
tstg - - 225
Fall time
VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA
tf- - 75
Noise figure
IC = 100 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 1 kΩ
F- - 5 dB
2012-08-21
4
SMBT3904...PN
DC current gain hFE = ƒ(IC)
VCE = 1 V, normalized
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
mA
IC
1
10
2
10
3
10
hFE
-55 °C
25 °C
125 °C
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
EHP00756
2
0V
BE sat
C
101
100
5
Ι
V
mA
0.2 0.4 0.6 0.8 1.0 1.2
CE sat
V,
5
102
VBE
VCE
Total power dissipation Ptot = ƒ(TS)
SMBT3904PN
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Total power dissipation Ptot = ƒ(TS)
SMBT3904UPN
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
2012-08-21
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SMBT3904...PN
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
SMBT3904PN
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = ƒ(tp)
SMBT3904PN
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Puls Load RthJS = ƒ (tp)
SMBT3904UPN
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
SMBT3904UPN
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
Ptotmax /PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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SMBT3904...PN
Storage time tstg = ƒ(IC)
EHP00762
10 mA
t
C
s
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
h
FE
= 20
10
25 C
125 C
10
= 20
FE
h
Delay time td = ƒ(IC)
Rise time tr = ƒ(IC)
EHP00761
10 mA
t
C
r
10
1
10
0
10 10
01 2
Ι
55
ns
r
t
t
d
,
3
10
d
t
10
2
10
3
= 3 V
CC
V
0 V
V= 2 V
BE
40 V
15 V
h
FE
= 10
Fall time tf = ƒ(IC)
EHP00763
10 mA
t
C
f
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
h
FE
= 20
25 C
125 C
CC
V= 40 V
= 10
FE
h
Rise time tr = ƒ(IC)
EHP00764
10 mA
t
C
r
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
25 C
125 C
CC
V= 40 V
= 10
FE
h
2012-08-21
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SMBT3904...PN
Package SC74
Package Outline
Foot Print
Standard Packing
0.5
0.95
1.9
2.9
546
321
1.1 MAX.
(0.35)
(2.25)
±0.2
2.9 B
0.2
+0.1
-0.05
0.35
Pin 1
marking
MB6x
0.95
1.9
0.15 -0.06
+0.1
1.6
10˚ MAX.
A
±0.1
2.5
0.25
10˚ MAX.
±0.1
±0.1
A0.2 M
0.1 MAX.
2.7
4
3.15
Pin 1
marking
8
0.2
1.15
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Manufacturer
2005, June
Date code (Year/Month)
BCW66H
Type code
Pin 1 marking
Laser marking
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
2012-08-21
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SMBT3904...PN
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15 1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9 ±0.1
A
-0.05 6x
0.1 M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
2012-08-21
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SMBT3904...PN
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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