©2001 Fairch ild Semicond uctor C orpo ration HGTP12N60C3, HGT1S12N60C3S Rev. B
HGTP12N60C3, HGT1S12N60C 3S
24A, 600V, UFS Series N-Channel IGBTs
The HGTP1 2N 60 C3 an d HG T1S1 2N 60 C3S are M OS gate d
high voltage switching devices combining the best features
of MOSF ETs and bipol ar transistors . These d evic es hav e the
high input impedance of a MOSFET and the low on-state
conduction los s of a bipolar transistor. The much lower
on-state v o ltage drop varies only mo derately between 25oC
and 150oC.
The IGBT is ideal fo r many hi gh vol tag e switc hing
applic ations op erating at mod erate frequenci es w he r e lo w
conduction loss es are essen tial, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49123.
Symbol
Features
• 24A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC
• Shor t Circuit Rating
• Low Condu c tion Loss
Packaging JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP12N60C3 TO-220AB P12N60C3
HGT1S12N60C3S TO-263AB S12N60C3
NO TE: When ordering, use the entire part number . Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A.
C
E
G
GATE
COLLECTOR
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
GATE
EMITTER
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
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©2001 Fairch ild Semicond uctor C orpo ration HGTP12N60C3, HGT1S12N60C3S Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP12N60C3, HGT1S12N60C3S UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 24 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitte r Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 24A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD104 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
Short Circuit Withstand T i me (Not e 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4µs
Short Circuit Withstand T i me (Not e 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 µs
CAUTION: Str esses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unles s Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltag e BVCES IC = 250µA, VGE = 0V 600 - - V
Emitter-Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 24 30 - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
VCE = BVCES TC = 150oC--1.0mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110,
VGE = 15V TC = 25oC - 1.65 2.0 V
TC = 150oC - 1.85 2.2 V
Gate to Emitter Threshold V oltage VGE(TH) IC = 250µA,
VCE = VGE TC = 25oC3.05.06.0V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±100 nA
Switching SOA SSOA TJ = 150oC
RG = 25Ω
VGE = 15V
L = 100µH
VCE(PK) = 480V 80 - - A
VCE(PK) = 600V 24 - - A
Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES -7.6- V
On-State Gate Charge QG(ON) IC = IC110,
VCE = 0.5 BVCES VGE = 15V - 48 55 nC
VGE = 20V - 62 71 nC
Current Turn-On Delay Time td(ON)I TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 25Ω,
L = 100µH
-14-ns
Current Rise Time trI -16-ns
Current Turn-Off Delay Time td(OFF)I - 270 400 ns
Current Fall Time tfI - 210 275 ns
Turn-On Energy EON - 380 - µJ
Turn-Off Energy (Note 3 ) EOFF - 900 - µJ
Thermal Resistance RθJC --1.2
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTP 12N60C3 and HGT1S12N60C3S were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off S witching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losse s.
HGTP12N60C3, HGT1S12N60C3S
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©2001 Fairch ild Semicond uctor C orpo ration HGTP12N60C3, HGT1S12N60C3S Rev. B
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMIT TER ON-STATE V OLTAGE FIGURE 4. COLLECTOR TO EMITTE R ON-STATE VOLTA GE
FIGURE 5. DC COLLECT OR CURRENT vs CASE
TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
ICE, COLLECTO R TO EMITTER CURRENT (A)
VGE, GAT E TO EMITTER VOLTAGE (V)
4681012
0
10
20
40
50
60
70
14
30
80
PULSE DURATI ON = 250µs
DUTY CYCLE <0.5%, VCE = 10V
TC = 25oC
TC = 150oC
TC = -40oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
µ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
00246810
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
VGE = 15.0V
40
50
60
70
80
10.0V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
30
012345
40
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATI ON = 250µs
DUTY CYCLE <0.5%, VGE = 10V
TC = 150oC
TC = 25oC
TC = -40oC
10
20
50
70
80
60
ICE, COLLECT OR TO EMITTER CURRENT (A)
0
30
01234 5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TC = 25oC
TC = -40oC
TC = 150oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
10
20
40
50
60
70
80
25 50 75 100 125 150
0
5
10
15
20
25
ICE, DC COLLECTOR CURRENT (A)
TC, CASE TEMPERATURE (oC)
VGE = 15V
ISC, PEAK SHORT CIRCUIT CURRENT (A)
20
60
80
120
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12
VGE, GATE TO EMITTER VOLTAGE (V)
14 1513
140
100
40
ISC
tSC
5
10
15
20 VCE = 360V, RG = 25Ω, TJ = 125oC
HGTP12N60C3, HGT1S12N60C3S
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©2001 Fairch ild Semicond uctor C orpo ration HGTP12N60C3, HGT1S12N60C3S Rev. B
FIGURE 7. TURN-ON DELAY TIME vs COLLECT OR T O
EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME vs COLLECT OR T O
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECT OR TO
EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME vs COLLECT OR T O
EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECT OR T O
EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECT OR TO
EMITTER CURRENT
Typical Performance Curves (Continued)
td(ON)I, TURN-ON DELAY TIME (ns)
10
20
30
5101520
ICE, COL LECTOR TO EMITTER CURRENT (A)
100
25 30
50
VGE = 10V
VGE = 15V
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
400
300
200
100 51015202530
TJ = 150oC, RG = 25Ω, L = 100mH, VCE(PK) = 480V
VGE = 10V
VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, TURN-ON RISE TIME (ns)
5
10
100
5 1015202530
VGE = 15V
VGE = 10V
200 TJ = 150oC, RG = 2 5Ω, L = 100µH, VCE(PK) = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
100
51015202530
200
300 TJ = 150oC, RG = 25Ω, L = 100mH, VCE(PK) = 480V
VGE = 10V or 15V
90
80
ICE, COLLECTOR TO EMITTER CURRENT (A)
05101520
EON, TURN-ON ENERGY LOSS (mJ)
VGE = 15V
0.5
1.0
1.5
2.0
25 30
VGE = 10V
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
51015202530
0.5
1.0
1.5
2.0
2.5
3.0
0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V or 15V
HGTP12N60C3, HGT1S12N60C3S
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©2001 Fairch ild Semicond uctor C orpo ration HGTP12N60C3, HGT1S12N60C3S Rev. B
FIGURE 13. OPERA TING FRE QUENCY vs COLLECT OR T O
EMITTER CURRENT FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLL ECT OR T O EMITTE R
VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
5102030
10
100
200
1
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
VGE = 10V
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0 100 200 300 400 500 600
0
20
40
60
80
TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
100
LIMITED BY
CIRCUIT
COES
CRES
VCE, COL LECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
500
1000
1500
2000
2500
C, CAPACITANCE (pF)
CIES
FREQUENCY = 1MHz
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
IG(REF) = 1.276mA, RL = 50Ω, TC = 25oC
0
240
120
360
480
600 15
12
9
6
3
0
VCE = 600V
VCE = 400V
VCE = 200V
10 20 30 40 50 600
t1, RECTANGULAR PULSE DURATION (s)
10-5 10-3 100101
10-4 10-1
10-2
100
ZθJC, NORMALIZED THERMAL RESPONSE
10-1
10-2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
t1
t2
PD
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
HGTP12N60C3, HGT1S12N60C3S
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©2001 Fairch ild Semicond uctor C orpo ration HGTP12N60C3, HGT1S12N60C3S Rev. B
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic d ischarge of
energy through the devices. When handling these devices,
care should be ex ercis ed to a ssure that the static charge built
in the handler’s body capacitance is not discharged thro ugh
the device. With proper handl ing and application procedures,
how ever, IGBTs are curre ntly being extensiv ely used in
production by numerous equipment manufacturers in military,
industrial and consumer applica tions, with virtually no damage
problems due to electrostatic discharge. IGBT s can be
handled safely if the foll owing basic precautions are t aken:
1. Prior to assem b ly int o a circui t, all l eads s hould be k ept
shorted together either by the use of metal shorting
springs or by the insertion into co ndu ctive ma terial suc h
as “ECCOSORBD LD26” or equivalent.
2. When de vice s are remov ed by hand from thei r carriers,
the hand being u sed shoul d be grou nded b y any suitab le
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. De vices sho uld n e v er b e ins erted into or remo v e d from
circuits with power on.
5. Gate Voltage Rating - Ne v er e xceed the g ate-v oltage
rat ing of VGEM. Exceedi ng the ra ted VGE can result in
permanent damage to th e oxide layer in th e gate region.
6. Gate Terminatio n - The gates of these de vi ces are
essentially capacitors. Circuits that leave the gate open-
circuit ed or fl oating shoul d be a v oide d. Thes e condi tions
can resu lt in turn-on of the device d u e to v olt age buil dup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - The se de vices do no t hav e an internal
monolithic ze ner diode from gate to emitter. If gate
prote ction is required an e xternal zener is recom mended.
Operating Frequency Information
Op erating frequen cy information for a typical device
Figur e 13) is presented as a guide for estimating device
perfor mance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating freq uency plot (Figure 1 3) of a typi ca l
device shows fMAX1 or fMAX2 whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defin ed by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I).
Deadti me (the de nominato r) has bee n arbit rarily held to 10%
of the on- state tim e for a 50% duty factor. Other defini tions
are possible. tD(OFF)I and tD(ON)I are defined in Figure 19.
Device turn-off delay can establish an addition al fr eque n cy
limitin g con diti on for an applic at ion other than TJM. tD(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allow able dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device s witching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 13) and the
conduction losses (PC) are appr o ximate d by
PC=(V
CE xI
CE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 19. EON is the integral of the instantaneous
power loss (ICE x VCE) during tu rn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e. the collector current equals ze ro (ICE = 0).
Test Circuit and Waveform
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS
RG = 25Ω
L = 100µH
VDD = 480V
+
-
RHRP1560
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF EON
HGTP12N60C3, HGT1S12N60C3S
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™
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