To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SD2121(L)/(S) Silicon NPN Epitaxial ADE-208-925 (Z) 1st. Edition September 2000 Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5 V Collector current IC 2.5 A Collector peak current I C(peak) 3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. 2SD2121(L)/(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 35 -- -- V I C = 1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 35 -- -- V I C = 10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 5 -- -- V I E = 1 mA, IC = 0 Collector cutoff current I CBO -- -- 20 A VCB = 35 V, IE = 0 60 -- 320 VCE = 2 V, IC = 0.5 A*2 hFE2 20 -- -- VCE = 2 V, IC = 1.5 A*2 Base to emitter voltage VBE -- -- 1.5 V VCE = 2 V, IC = 1.5 A*2 Collector to emitter saturation voltage VCE(sat) -- -- 1.0 V I C = 2 A, IB = 0.2 A*2 DC current transfer ratio hFE1* 1 Notes: 1. The 2SD2121(L)/(S) is grouped by hFE1 as follows. B C D 60 to 120 100 to 200 160 to 320 2. Pulse test. Maximum Collector Dissipation Curve Area of Safe Operation Collector current IC (A) 10 20 10 iC(peak) 3.0 PW = 10 ms IC(max) 1.0 0.3 Ta = 25C 1 shot pulse s 1m tion era Op C) DC = 25 (T C Collector power dissipation PC (W) 30 0.1 0 2 50 100 Case temperature TC (C) 150 1 3 10 30 100 Collector to emitter voltage VCE (V) 2SD2121(L)/(S) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 1.6 1,000 16 14 12 DC current transfer ratio hFE Collector current IC (A) 2.0 10 1.2 8 6 0.8 0.4 4 2 mA IB = 0 Ta = 25C 2 3 4 5 1 Collector to emitter voltage VCE (V) 100 30 VCE = 2 V Ta = 25C 10 0.03 Collector to Emitter Saturation Voltage vs. Collector Current 0.3 0.1 0.03 3.0 Typical Transfer Characteristics 1.6 1.2 0.8 0.4 IC = 10 IB Ta = 25C 0.01 0.03 0.1 0.3 1.0 Collector current IC (A) 2.0 1.0 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0 300 0.1 0.3 1.0 Collector current IC (A) 3.0 0 VCE = 2 V Ta = 25C 0.8 1.2 1.6 2.0 0.4 Base to emitter voltage VBE (V) 3 2SD2121(L)/(S) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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